Electrolytic Etching/Deposition System. A system for continuous circuit fabrication comprising means for storing and dispensing the substrate, means for laminating the substrate, means for printing the substrate, means for optical inspection of the substrate, means for photolithography of the substrate, means for drying the substrate, means for developing the substrate, means for washing the substrate and means for electroplating the substrate.

A wafer holder for holding a semiconductor wafer during electrochemical porosification with an electrolyte comprises a housing for receiving the semiconductor wafer, an aperture in the housing, through which an upper surface of the semiconductor wafer is exposable to the electrolyte, a seal extending around the aperture, for preventing the ingress of electrolyte into the housing; and an electrical contact for making an electrical connection with the semiconductor wafer. A method of electrochemical porosification of a semiconductor wafer comprises the steps of placing a semiconductor wafer in a wafer holder; immersing the housing in an electrolyte, so that the surface of the semiconductor wafer is exposed to electrolyte through the aperture; and applying a potential difference between the semiconductor wafer and the electrolyte.

A wafer holder for holding a semiconductor wafer during electrochemical porosification with an electrolyte comprises a housing for receiving the semiconductor wafer, an aperture in the housing, through which an upper surface of the semiconductor wafer is exposable to the electrolyte, a seal extending around the aperture, for preventing the ingress of electrolyte into the housing; and an electrical contact for making an electrical connection with the semiconductor wafer. A method of electrochemical porosification of a semiconductor wafer comprises the steps of placing a semiconductor wafer in a wafer holder; immersing the housing in an electrolyte, so that the surface of the semiconductor wafer is exposed to electrolyte through the aperture; and applying a potential difference between the semiconductor wafer and the electrolyte.

Various technologies are described herein pertaining to electrochemical etching of a semiconductor controlled by way of a laser that emits light with an energy below a bandgap energy of the semiconductor.

Various technologies are described herein pertaining to electrochemical etching of a semiconductor controlled by way of a laser that emits light with an energy below a bandgap energy of the semiconductor.

An observation and photography apparatus that has a polishing mechanism attached thereto. The polishing mechanism is provided with a turntable with a perpendicular rotation shaft, a polishing cloth for polishing the surface of a sample attached to the bottom surface of the turntable, and a polishing-fluid spraying nozzle disposed below the polishing cloth for spraying polishing fluid containing polishing material upward to we the polishing cloth.

An observation and photography apparatus that has a polishing mechanism attached thereto. The polishing mechanism is provided with a turntable with a perpendicular rotation shaft, a polishing cloth for polishing the surface of a sample attached to the bottom surface of the turntable, and a polishing-fluid spraying nozzle disposed below the polishing cloth for spraying polishing fluid containing polishing material upward to we the polishing cloth.

An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.

An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.

A method of processing a superabrasive element includes providing a superabrasive element including a polycrystalline diamond table that includes a metallic material disposed in interstitial spaces defined within the polycrystalline diamond table. The polycrystalline diamond table includes a superabrasive face and a superabrasive side surface extending around an outer periphery of the superabrasive face. The method also includes leaching the metallic material from at least a volume of the polycrystalline diamond table to produce a leached volume in the polycrystalline diamond table by (1) exposing at least a portion of the polycrystalline diamond table to a processing solution, (2) exposing an electrode to the processing solution, and (3) applying a charge to the electrode such that a voltage is generated between the polycrystalline diamond table and the electrode and the voltage is applied to the processing solution.