Disclosed herein are methods and systems for epitaxial crystallization on an integrated processing architecture. In some embodiments, a method may include performing a first plasma treatment on a semiconductor substrate to remove a native oxide layer along an upper surface of the semiconductor substrate, and forming a film layer over the upper surface by performing a second plasma treatment on the semiconductor substrate. The method may further include performing an ion implantation process to crystallize the film layer, wherein the implant process comprises delivering an ion species to the film layer while the semiconductor substrate is at a temperature greater than 100 C.