Disclosed is a method for readily and inexpensively producing zeolite without using an organic structure-directing agent (organic SDA). Specifically disclosed is a method whereby a gel containing a silica source, an alumina source, an alkaline source and water is reacted with zeolite seed crystals, to produce a zeolite with the same kind of skeletal structure as the zeolite. The gel used is a gel of a composition whereby, when a zeolite is synthesized from this gel only, the synthesized zeolite comprises at least one of the kinds of composite building units of the target zeolite.

An oxygen evolution reaction (OER) electrocatalyst for acidic media comprises a metal oxide structure comprising a pyrochlore phase of chemical formula A.sub.2B.sub.2O.sub.n, wherein A comprises one or more A-site metals, B comprises one or more B-site metals, and 6.0n7.3. The metal oxide structure exhibits a mass current density of at least about 20 A/g at an over-potential of 0.22 V in 0.1 M HClO.sub.4. According to another embodiment, an electrocatalyst for acidic media comprises a porous metal oxide structure having particulate walls separating a plurality of pores, where each particulate wall comprises interconnected primary particles. The porous metal oxide structure comprises a pyrochlore phase of chemical formula A.sub.2B.sub.2O.sub.n, wherein A comprises one or more A-site metals, B comprises one or more B-site metals, and 6.0n7.3.

An oxygen evolution reaction (OER) electrocatalyst for acidic media comprises a metal oxide structure comprising a pyrochlore phase of chemical formula A.sub.2B.sub.2O.sub.n, wherein A comprises one or more A-site metals, B comprises one or more B-site metals, and 6.0n7.3. The metal oxide structure exhibits a mass current density of at least about 20 A/g at an over-potential of 0.22 V in 0.1 M HClO.sub.4. According to another embodiment, an electrocatalyst for acidic media comprises a porous metal oxide structure having particulate walls separating a plurality of pores, where each particulate wall comprises interconnected primary particles. The porous metal oxide structure comprises a pyrochlore phase of chemical formula A.sub.2B.sub.2O.sub.n, wherein A comprises one or more A-site metals, B comprises one or more B-site metals, and 6.0n7.3.

A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100 C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100 C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.

A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700? C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrO.sub.2 film on said Zr film on a substrate heated to 700? C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a Y.sub.2O.sub.3 film on said ZrO.sub.2 film on a substrate heated to 700? C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.

A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700? C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrO.sub.2 film on said Zr film on a substrate heated to 700? C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a Y.sub.2O.sub.3 film on said ZrO.sub.2 film on a substrate heated to 700? C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.

The present invention relates to a process for preparing epitaxial -quartz layers on a solid substrate, to the material obtained according to this process, and to the various uses thereof, especially in the electronics field.

The present invention relates to a process for preparing epitaxial -quartz layers on a solid substrate, to the material obtained according to this process, and to the various uses thereof, especially in the electronics field.

Provided is a method of arranging particles on a substrate, the method including: (a) preparing a substrate, a surface of which has depressions or projections capable of fixing the positions and/or orientations of one or more particles; and (b) placing the particles on the substrate and applying a physical pressure to the particles so that a portion or the whole of each particle is inserted in each of pores defined by the depressions or the projections. Provided is also a method of arranging particles on a substrate, the method including: (a) preparing a substrate, at least a surface portion of which has adhesive property; and (b) placing particles, which do not have flat facets but curved surfaces, on the substrate and applying a physical pressure to the particles so that the particles are immobilized on adhesive surface portions of the substrate.