A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm.sup.−1, with an absorbance per unit thickness of greater than about 0.01 cm.sup.−1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×10.sup.18 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Embodiments of the present disclosure provide methods of growing organometallic halide structures such as single crystal organometallic halide perovskites, methods of use, devices incorporating organometallic halide structures, and the like.

Embodiments of the present disclosure provide methods of growing organometallic halide structures such as single crystal organometallic halide perovskites, methods of use, devices incorporating organometallic halide structures, and the like.

A wavelength conversion device of the present disclosure includes a substrate, a phosphor layer that has a matrix containing zinc oxide and phosphor particles embedded in the matrix and that is supported by the substrate, a dielectric layer disposed between the substrate and the phosphor layer, and a protective layer that is disposed between the phosphor layer and the dielectric layer and that has an isoelectric point equal to or larger than 7. A main surface of the substrate includes, for example, first and second regions. The phosphor layer covers, for example, only the first region out of the first and second regions.

The present disclosure relates to a quantum dot light-emitting layer, a quantum dot light-emitting device and preparing methods therefor and belongs to the field of liquid crystal display. The preparing method for a quantum dot light-emitting layer includes: placing a first halide AX and a second halide BX.sub.2 in a solvent; stirring and dispersing the reaction system formed by the first halide AX, the second halide BX.sub.2 and the solvent at a set temperature for a set time period; cooling the reaction system at a cooling rate of 0.1° C./24 h-1° C./24 h to generate an A.sub.4BX.sub.6 single crystal thin film containing ABX.sub.3 quantum dots, and using the A.sub.4BX.sub.6 single crystal thin film containing ABX.sub.3 quantum dots as the quantum dot light-emitting layer; wherein A includes one of Cs.sup.+, CH.sub.3NH.sub.3.sup.+ and HC(NH.sub.2).sub.2.sup.+; B includes one of Pb.sup.2+ and Sn.sup.2+; and X includes one of Cl.sup.−, Br.sup.− and I.sup.−.

Disclosed herein are crystalline compositions comprising tessellated rigid triangular macrocycles in a two-dimensional plane and methods of making the same.

The present application discloses a method of preparing quantum dots. The method includes combining a first quantum dots precursor and a second quantum dots precursor to form a first reaction mixture including a supercritical liquid medium; nucleating and growing the quantum dots from the first quantum dots precursor and the second quantum dots precursor in the first reaction mixture including the supercritical liquid medium; and forming a solid quantum dots material in the presence of the supercritical liquid medium.

The present application discloses a method of preparing quantum dots. The method includes combining a first quantum dots precursor and a second quantum dots precursor to form a first reaction mixture including a supercritical liquid medium; nucleating and growing the quantum dots from the first quantum dots precursor and the second quantum dots precursor in the first reaction mixture including the supercritical liquid medium; and forming a solid quantum dots material in the presence of the supercritical liquid medium.

In general, the systems and methods described in this application relate to laser-induced nucleation in continuous flow. A method of laser-induced nucleation in continuous flow includes injecting a saturated solution, undersaturated solution, or supersaturated solution through an inlet of a device. The method can include converting the saturated solution or undersaturated solution into supersaturated solution by changing a temperature of the saturated solution or undersaturated solution. The method can include passing one or more laser pulses through the supersaturated solution within the device. The method can include flowing the saturated solution, undersaturated solution, or the supersaturated solution through an outlet of the device.

An apparatus for growing hydrate crystals includes a high-pressure-resistant crystallization vessel, a temperature control system, a pressure control system, a data collection system, and a mobile shelf. The apparatus can realize a variety of experimental methods such as the bubble method, the droplet method and the solution growth method by changing the experimental fitting in the high-pressure-resistant crystallization vessel, and thereby-improve the versatility of the device.