The present disclosure discloses, in one arrangement, a scintillator material made of a metal halide with one or more additional group-13 elements. An example of such a compound is Ce:LaBr.sub.3 with thallium (Tl) added, either as a codopant or in a stoichiometric admixture and/or solid solution between LaBr.sub.3 and TlBr. In another arrangement, the above single crystalline iodide scintillator material can be made by first synthesizing a compound of the above composition and then forming a single crystal from the synthesized compound by, for example, the Vertical Gradient Freeze method. Applications of the scintillator materials include radiation detectors and their use in medical and security imaging.

Methods and wafers for low etch pit density, low slip line density, and low strain indium phosphide are disclosed and may include an indium phosphide single crystal wafer having a diameter of 4 inches or greater, having a measured etch pit density of less than 500 cm.sup.−2, and having fewer than 5 dislocations or slip lines as measured by x-ray diffraction imaging. The wafer may have a measured etch pit density of 200 cm.sup.−2 or less, or 100 cm.sup.−2 or less, or 10 cm.sup.−2 or less. The wafer may have a diameter of 6 inches or greater. An area of the wafer with a measured etch pit density of zero may at least 80% of the total area of the surface. An area of the wafer with a measured etch pit density of zero may be at least 90% of the total area of the surface.

The present invention discloses a directional solidification method for a superalloy single crystal blade based on solid-liquid interface steady control. The method establishes effective criteria for withdrawal speed adjustment, i.e. the related position between a macro solid-liquid interface and a thermal baffle, the range between the dendrite tips at the solid-liquid interface, and the difference between the advance speed of the macro solid-liquid interface and the withdrawal speed. With these criteria, the advance of the solid-liquid interface during directional solidification is simulated and a withdrawal speed curve v(t) for the solid-liquid interface steady advancement was obtained. And then, the single crystal blade was prepared.

Provided is a device for manufacturing monocrystalline silicon and a cooling method thereof. The device includes a crystal puller and a cooling apparatus. A heating apparatus and a first thermal insulation structure are arranged in the crystal puller. The first thermal insulation structure is located above the heating apparatus. The cooling apparatus includes a jacking mechanism and a cooling pipe. The cooling pipe is capable of moving into or out of the crystal puller. When the cooling pipe enters the crystal puller, the cooling pipe is connected to the first thermal insulation structure, and the cooling pipe lifts the first thermal insulation structure through the jacking mechanism to increase a distance between the first thermal insulation structure and the heating apparatus, and a cooling medium is output to the cooling pipe to cool the crystal puller. The cooling medium may be liquid or gas.

The ferrite powder of the present invention is a ferrite powder containing a plurality of ferrite particles, wherein the ferrite particles each are a single crystal body having an average particle diameter of 1-2,000 nm, and have a polyhedron shape, and wherein the ferrite particles each contain 2.0-10.0 mass % of Sr, and 55.0-70.0 mass % of Fe.

The present invention provides a rare-earth halide scintillating material and application thereof. The rare-earth halide scintillating material has a chemical formula of RE.sub.aCe.sub.bX.sub.3, wherein RE is a rare-earth element La, Gd, Lu or Y, X is one or two of halogens Cl, Br and I, 0≤a≤1.1, 0.01≤b≤1.1, and 1.0001≤a+b≤1.2. By taking a +2 valent rare-earth halide having the same composition as a dopant to replace a heterogeneous alkaline earth metal halide in the prior art for doping, the rare-earth halide scintillating material is relatively short of a halogen ion. The apparent valence state of a rare-earth ion is between +2 and +3. The rare-earth halide scintillating material belongs to non-stoichiometric compounds, but still retains a crystal structure of an original stoichiometric compound, and has more excellent energy resolution and energy response linearity than the stoichiometric compound.

The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

A method of forming an organic solid crystal (OSC) thin film includes forming a layer of a non-volatile medium material over a surface of a mold, forming a layer of a molecular feedstock over a surface of the non-volatile medium material, the molecular feedstock including an organic solid crystal precursor, forming crystal nuclei from the organic solid crystal precursor, and growing the crystal nuclei to form the organic solid crystal thin film. An organic solid crystal (OSC) thin film may include a biaxially-oriented organic solid crystal layer having mutually orthogonal refractive indices, n.sub.1≠n.sub.2≠n.sub.3.

A method of forming an organic solid crystal (OSC) thin film includes forming a layer of a non-volatile medium material over a surface of a mold, forming a layer of a molecular feedstock over a surface of the non-volatile medium material, the molecular feedstock including an organic solid crystal precursor, forming crystal nuclei from the organic solid crystal precursor, and growing the crystal nuclei to form the organic solid crystal thin film. An organic solid crystal (OSC) thin film may include a biaxially-oriented organic solid crystal layer having mutually orthogonal refractive indices, n.sub.1≠n.sub.2≠n.sub.3.

A relaxor-PT based piezoelectric crystal is disclosed, comprising the general formula of (Pb.sub.1-1.5xM.sub.x){[(M.sub.I,M.sub.II).sub.1-z(M.sub.I′,M.sub.II′).sub.z].sub.1-yTi.sub.y}O.sub.3, wherein: M is a rare earth cation; M.sub.I is selected from the group consisting of Mg.sup.2+, Zn.sup.2+, Yb.sup.3+, Sc.sup.3+, and In.sup.3+; M.sub.II is Nb.sup.5+; M.sub.I′ is selected from the group consisting of Mg.sup.2+, Zn.sup.2+, Yb.sup.3+, Sc.sup.3+, In.sup.3+, and Zr.sup.4; M.sub.II′ is Nb.sup.5+ or Zr.sup.4+; 0<x≤0.05; 0.02<y<0.7; and 0≤z≤1, provided that if either M.sub.I′ or M.sub.II′ is Zr.sup.4+, both M.sub.I′ and M.sub.II′ are Zr.sup.4+. A method for forming the relaxor-PT based piezoelectric crystal is disclosed, comprising pre-synthesizing precursor materials by calcining mixed oxides, mixing the precursor materials with single oxides and calcining to form a feeding material, and growing the relaxor-PT based piezoelectric crystal having the general formula of (Pb.sub.1-1.5xM.sub.x){[(M.sub.I,M.sub.II).sub.1-z(M.sub.I′,M.sub.II′).sub.z].sub.1-yTi.sub.y}O.sub.3 from the feeding material by a Bridgman method.