A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.

The apparatus for producing a gallium oxide crystal relating to the invention contains a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater, the crucible is a crucible containing a Pt-based alloy, the furnace body has an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, and the ring shaped heat-resistant members each contain plural divided pieces that are joined to each other to the ring shape.

Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.

Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.

A system for growing a crystal is provided that includes a crucible, a furnace, and a heat transfer device. The crucible has a first volume to receive therein a material for growing a crystal. The furnace has an ampoule configured to receive the crucible within the ampoule. The furnace is configured to produce a lateral thermal profile combined with a vertical thermal gradient. The heat transfer device is disposed under the crucible and configured to produce a leading edge of growth of the crystal at a bottom of the crucible. The heat transfer device includes at least one elongate member disposed beneath the crucible and extending along a length of the crucible.

The present invention relates to a method and apparatus for growing sapphire single crystals, and more particularly to a method and apparatus for growing sapphire single crystals in which a high quality, long single crystal can be obtained within a short period of time upon the use of a long rectangular crucible and a long seed crystal extending in a c-axial direction. Use of the method and apparatus for growing sapphire single crystals according to the present invention can uniformly maintain the horizontal temperature at the inside of the crucible despite the use of a rectangular crucible, thereby obtaining a high-quality single crystal as well decreasing the possibility of a failure in the growth of the single crystal.

The present invention relates to a method and apparatus for growing sapphire single crystals, and more particularly to a method and apparatus for growing sapphire single crystals in which a high quality, long single crystal can be obtained within a short period of time upon the use of a long rectangular crucible and a long seed crystal extending in a c-axial direction. Use of the method and apparatus for growing sapphire single crystals according to the present invention can uniformly maintain the horizontal temperature at the inside of the crucible despite the use of a rectangular crucible, thereby obtaining a high-quality single crystal as well decreasing the possibility of a failure in the growth of the single crystal.

A method is provided for manufacturing a component. This method includes additively manufacturing a crucible for casting of the component. A metal material is directionally solidified within the crucible to form a metal single crystal material. A sacrificial core is removed to reveal a metal single crystal component with internal passageways. A component is provided for a gas turbine engine that includes a metal single crystal material component with internal passageways. The metal single crystal material component was additively manufactured of a metal material concurrently with a core that forms the internal passageways. The metal material was also remelted and directionally solidified.

The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.

The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.