Na-rich electrolyte compositions provided herein can be used in a variety of devices, such as sodium ionic batteries, capacitors and other electrochemical devices. Na-rich electrolyte compositions provided herein can have a chemical formula of Na.sub.3OX, Na.sub.3SX, Na .sub.(3-δ) M.sub.δ/2OX and Na .sub.(3-δ) M.sub.δ/2SX wherein 0<δ<0.8, wherein X is a monovalent anion selected from fluoride, chloride, bromide, iodide, H.sup.−, CN.sup.−, BF.sub.4.sup.−, BH.sub.4.sup.−, ClO.sub.4.sup.−, CH.sub.3.sup.−, NO.sub.2.sup.−, NH.sub.2.sup.− and mixtures thereof, and wherein M is a divalent metal selected from the group consisting of magnesium, calcium, barium, strontium and mixtures thereof. Na-rich electrolyte compositions provided herein can have a chemical formula of Na .sub.(3-δ) M.sub.δ/3OX and/or Na .sub.(3-δ) M.sub.δ/3SX; wherein 0<δ<0.5, wherein M is a trivalent cation M.sup.3, and wherein X is selected from fluoride, chloride, bromide, iodide, H.sup.−, CN.sup.−, BF.sub.4.sup.−, BH.sub.4.sup.−, ClO.sub.4.sup.−, CH.sub.3.sup.−, NO.sub.2.sup.−, NH.sup.2− and mixtures thereof. Synthesis and processing methods of NaRAP compositions for battery, capacitor, and other electrochemical applications are also provided.

Na-rich electrolyte compositions provided herein can be used in a variety of devices, such as sodium ionic batteries, capacitors and other electrochemical devices. Na-rich electrolyte compositions provided herein can have a chemical formula of Na.sub.3OX, Na.sub.3SX, Na .sub.(3-δ) M.sub.δ/2OX and Na .sub.(3-δ) M.sub.δ/2SX wherein 0<δ<0.8, wherein X is a monovalent anion selected from fluoride, chloride, bromide, iodide, H.sup.−, CN.sup.−, BF.sub.4.sup.−, BH.sub.4.sup.−, ClO.sub.4.sup.−, CH.sub.3.sup.−, NO.sub.2.sup.−, NH.sub.2.sup.− and mixtures thereof, and wherein M is a divalent metal selected from the group consisting of magnesium, calcium, barium, strontium and mixtures thereof. Na-rich electrolyte compositions provided herein can have a chemical formula of Na .sub.(3-δ) M.sub.δ/3OX and/or Na .sub.(3-δ) M.sub.δ/3SX; wherein 0<δ<0.5, wherein M is a trivalent cation M.sup.3, and wherein X is selected from fluoride, chloride, bromide, iodide, H.sup.−, CN.sup.−, BF.sub.4.sup.−, BH.sub.4.sup.−, ClO.sub.4.sup.−, CH.sub.3.sup.−, NO.sub.2.sup.−, NH.sup.2− and mixtures thereof. Synthesis and processing methods of NaRAP compositions for battery, capacitor, and other electrochemical applications are also provided.

A biomedical implant (16, 18) is formed from magnesium (Mg) single crystal (10). The biomedical implant (16, 18) may be biodegradable. The biomedical implant (16, 18) may be post treated to control the mechanical properties and/or corrosion rate thereof said Mg single crystal (10) without changing the chemical composition thereof. A method of making a Mg single crystal (10) for biomedical applications includes filling a single crucible (12) with more than one chamber with polycrystalline Mg, melting at least a portion of said polycrystalline Mg, and forming more than one Mg single crystal (10) using directional solidification.

The invention provides a growth method for preparing high-yield crystals, belongs to the technical field of single crystal growth. Auxiliary crucibles are arranged on a crucible according to different crystal types and according to the crystal orientation of crystal growth in the main crucible, the relationship between the crystal growth direction and twin crystal orientation. By controlling the angle between the auxiliary crucibles and the main crucible, the relative position between the auxiliary crucibles each other, the auxiliary crucibles realize correction on the crystal orientation of twins generated in the main crucible crystal growth process. The growth method for preparing the high-yield crystals provided by the invention has the following advantages: the crystal orientation change caused by twins is corrected through auxiliary crucibles additionally arranged on the main crucible, and the overall yield is improved for the growth process of the dislocation crystal with large probability; the crucible position can be customized according to the influence of twins on the crystal growth direction, suitable for various crystal preparation processes, improving the yield obviously, reducing the crystal processing difficulty, and improving the material utilization rate.

Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. γ and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.

A method for manufacturing a semiconductor for a solar cell and other applications is disclosed. A separating layer may be introduced into a mold having an interior defining a shape of a solar cell or other substantially planer object. A silicon nitride coating may be applied onto one or more interior surfaces of the mold. A planar capillary space is formed along the conductive layer. The silicon is melted under an ultra-low oxygen content cover atmosphere and allowed to flow into the capillary space. The melted silicon is then cooled within the capillary space such that the silicon forms one part of a P-N junction in the body of the semiconductor.

An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.

The present invention relates to an apparatus and method for directional solidification of silicon. The apparatus can use a cooling platform to cool a portion of a bottom of a directional solidification crucible. The apparatus and method of the present invention can be used to make silicon crystals for use in solar cells.

A method is provided for manufacturing a component. This method includes additively manufacturing a crucible for casting of the component. A metal material is directionally solidified within the crucible to form a metal single crystal material. A sacrificial core is removed to reveal a metal single crystal component with internal passageways. A component is provided for a gas turbine engine that includes a metal single crystal material component with internal passageways. The metal single crystal material component was additively manufactured of a metal material concurrently with a core that forms the internal passageways. The metal material was also remelted and directionally solidified.

A method is provided for manufacturing a component. This method includes additively manufacturing a crucible for casting of the component. A metal material is directionally solidified within the crucible to form a metal single crystal material. A sacrificial core is removed to reveal a metal single crystal component with internal passageways. A component is provided for a gas turbine engine that includes a metal single crystal material component with internal passageways. The metal single crystal material component was additively manufactured of a metal material concurrently with a core that forms the internal passageways. The metal material was also remelted and directionally solidified.