According to the present invention, a resin material that has the following surface concentration of impurities is consistently used in production of polycrystalline silicon. Values obtained from quantitative analysis by ICP-mass spectrometry using a 1 wt % nitric acid aqueous solution as an extraction liquid are: a phosphorous (P) concentration of 50 pptw or less; an arsenic (As) concentration of 2 pptw or less; a boron (B) concentration of 20 pptw or less; an aluminum (Al) concentration of 10 pptw or less; a total concentration of 6 elements of iron (Fe), chromium (Cr), nickel (Ni), copper (Cu), sodium (Na), and zinc (Zn) of 80 pptw or less; a total concentration of 10 elements of lithium (Li), potassium (K), calcium (Ca), titanium (Ti), manganese (Mn), cobalt (Co), molybdenum (Mo), tin (Sn), tungsten (W), and lead (Pb) of 100 pptw or less.

Disclosed is a radiation detector including a thallium bromide crystal, and a first electrode and a second electrode facing each other with the thallium bromide crystal interposed therebetween. The thallium bromide crystal contains 0.0194% to 6.5% by mass of chlorine atoms based on a mass of the thallium bromide crystal.

For evaluating a polycrystalline silicon rod to be used as a raw material for production of FZ Si single crystals, novel evaluation values (values of characteristics×amount of crystals) including the amount of crystals grown in the growth direction (radial direction) are defined and the homogeneity in crystal characteristics in the growth direction (radial direction) is evaluated. Specifically, the homogeneity of the polycrystalline rod is evaluated by sampling a plurality of specimen plates each having, as a principal plane thereof, a cross-section perpendicular to a radial direction of the polycrystalline rod grown by a Siemens method at equal intervals in the radial direction, determining values of characteristics of the crystals of the specimen plates by measurements, and by using evaluation values obtained by multiplying amounts of the crystals (relative amounts of the crystals) at sites where the specimen plates have been sampled by the values of the crystal characteristics.

For evaluating a polycrystalline silicon rod to be used as a raw material for production of FZ Si single crystals, novel evaluation values (values of characteristics×amount of crystals) including the amount of crystals grown in the growth direction (radial direction) are defined and the homogeneity in crystal characteristics in the growth direction (radial direction) is evaluated. Specifically, the homogeneity of the polycrystalline rod is evaluated by sampling a plurality of specimen plates each having, as a principal plane thereof, a cross-section perpendicular to a radial direction of the polycrystalline rod grown by a Siemens method at equal intervals in the radial direction, determining values of characteristics of the crystals of the specimen plates by measurements, and by using evaluation values obtained by multiplying amounts of the crystals (relative amounts of the crystals) at sites where the specimen plates have been sampled by the values of the crystal characteristics.

A deposit removing device disclosed herein removes a deposit that adheres to an exhaust pipe through which gas is exhausted from a chamber that manufactures a semiconductor crystal. The deposit removing device includes: a valve that opens and closes an exhaust outlet that communicates with the exhaust pipe; a sealing cover and a fixed table configured to store the valve, into which an inert gas is introduceable, and configured to isolate the exhaust outlet from the outside; and an exhaust outlet opening/closing portion that includes a cylinder for driving the valve and a cylinder for driving the sealing cover or the fixed table. The cylinder drives the valve to open and close the exhaust outlet, and the cylinder drives the sealing cover or the fixed table to introduce the atmosphere into the sealing cover.

In general, the systems and methods described in this application relate to laser-induced nucleation in continuous flow. A method of laser-induced nucleation in continuous flow includes injecting a saturated solution, undersaturated solution, or supersaturated solution through an inlet of a device. The method can include converting the saturated solution or undersaturated solution into supersaturated solution by changing a temperature of the saturated solution or undersaturated solution. The method can include passing one or more laser pulses through the supersaturated solution within the device. The method can include flowing the saturated solution, undersaturated solution, or the supersaturated solution through an outlet of the device.

Provided is a manufacturing method with which it is possible to convert a mayenite-type compound to an electride, wherein a reducing agent is not required, reaction conditions include a temperature that is lower than that in the related art, and the reaction is performed more quickly in a simple manner, and, additionally, by requiring a lower amount of energy. Provided is a method for manufacturing an electride of mayenite-type compounds, the method being characterized in that a mayenite-type compound is converted to an electride by making a current directly flow through the mayenite-type compound by applying a voltage to the mayenite-type compound in a heating state.

Provided is a manufacturing method with which it is possible to convert a mayenite-type compound to an electride, wherein a reducing agent is not required, reaction conditions include a temperature that is lower than that in the related art, and the reaction is performed more quickly in a simple manner, and, additionally, by requiring a lower amount of energy. Provided is a method for manufacturing an electride of mayenite-type compounds, the method being characterized in that a mayenite-type compound is converted to an electride by making a current directly flow through the mayenite-type compound by applying a voltage to the mayenite-type compound in a heating state.

Provided is a manufacturing method with which it is possible to convert a mayenite-type compound to an electride, wherein a reducing agent is not required, reaction conditions include a temperature that is lower than that in the related art, and the reaction is performed more quickly in a simple manner, and, additionally, by requiring a lower amount of energy. Provided is a method for manufacturing an electride of mayenite-type compounds, the method being characterized in that a mayenite-type compound is converted to an electride by making a current directly flow through the mayenite-type compound by applying a voltage to the mayenite-type compound in a heating state.

Provided is a manufacturing method with which it is possible to convert a mayenite-type compound to an electride, wherein a reducing agent is not required, reaction conditions include a temperature that is lower than that in the related art, and the reaction is performed more quickly in a simple manner, and, additionally, by requiring a lower amount of energy. Provided is a method for manufacturing an electride of mayenite-type compounds, the method being characterized in that a mayenite-type compound is converted to an electride by making a current directly flow through the mayenite-type compound by applying a voltage to the mayenite-type compound in a heating state.