A method is provided for recycling sub-micron Si-particles from a Si wafer production process resulting from a diamond fixed abrasive process including slicing and cutting, the method including the steps of: providing a paste of sub-micron Si-particles resulting from the diamond fixed abrasive process; drying and shaping the paste of sub-micron Si-particles into a layer; and applying a zone melting step to the dried and shaped layer of Si-particles on a substrate.

The invention provides a process for determining surface contamination of polycrystalline silicon, including the steps of: a) providing two polycrystalline silicon rods by deposition in a Siemens reactor; b) determining contaminants in the first of the two rods immediately after the deposition; c) conducting the second rod through one or more systems in which polycrystalline silicon rods are processed further to give rod pieces or polysilicon fragments, optionally cleaned, stored or packed; d) then determining contaminants in the second rod; wherein the difference in the contaminants determined in the first and second rods gives surface contamination of polycrystalline silicon resulting from systems and the system environment.

The invention provides a process for determining surface contamination of polycrystalline silicon, including the steps of: a) providing two polycrystalline silicon rods by deposition in a Siemens reactor; b) determining contaminants in the first of the two rods immediately after the deposition; c) conducting the second rod through one or more systems in which polycrystalline silicon rods are processed further to give rod pieces or polysilicon fragments, optionally cleaned, stored or packed; d) then determining contaminants in the second rod; wherein the difference in the contaminants determined in the first and second rods gives surface contamination of polycrystalline silicon resulting from systems and the system environment.

A TiAl intermetallic compound single crystal material and a preparation method therefor are disclosed. The alloy composition of the material comprises Ti.sub.aAl.sub.bNb.sub.c(C, Si).sub.d, wherein 43b49, 2c10, a+b+c=100, and 0d1 (at. %).

A TiAl intermetallic compound single crystal material and a preparation method therefor are disclosed. The alloy composition of the material comprises Ti.sub.aAl.sub.bNb.sub.c(C, Si).sub.d, wherein 43b49, 2c10, a+b+c=100, and 0d1 (at. %).

There are provided a solid electrolyte material having high density and ion conductivity, and an all solid lithium ion secondary battery using the solid electrolyte material. The solid electrolyte material has a garnet-related structure which has a chemical composition represented by Li.sub.7-x-yLa.sub.3Zr.sub.2-x-yTa.sub.xNb.sub.yO.sub.12 (0x0.8, 0.2y1, and 0.2x+y1) and relative density of 99% or greater, and belongs to a cubic system. The solid electrolyte material has lithium ion conductivity which is equal to or greater than 1.010.sup.3 S/cm. The solid electrolyte material has a lattice constant a which satisfies 1.28 nma1.30 nm, and has a lithium ion which occupies only two or more 96h sites in a crystal structure. The all solid lithium ion secondary battery includes a positive electrode, a negative electrode, and a solid electrolyte. The solid electrolyte includes the solid electrolyte material.

Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.

Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.

Provided is a polycrystalline silicon rod suitable as a raw material for production of single-crystalline silicon. A crystal piece (evaluation sample) is collected from a polycrystalline silicon rod grown by a Siemens method, and a polycrystalline silicon rod in which an area ratio of a crystal grain having a particle size of 100 nm or less is 3% or more is sorted out as the raw material for production of single-crystalline silicon. When single-crystalline silicon is grown by an FZ method using the polycrystalline silicon rod as a raw material, the occurrence of dislocation is remarkably suppressed.

The present invention is a method for manufacturing an FZ silicon single crystal for a solar cell, including the steps of: pulling a CZ silicon single crystal doped with gallium by a Czochralski method; and float-zone processing a raw material rod, with the raw material rod being the CZ silicon single crystal, at 1.6 atmospheric pressure or more to manufacture the FZ silicon single crystal. As a result, it is possible to provide a method for manufacturing an FZ silicon single crystal for a solar cell that can decrease the amount of gallium dopant evaporated during the float-zone processing, thereby preventing the silicon single crystal from increasing the resistance while decreasing oxygen, which is inevitably introduced into a CZ crystal, and preventing formation of a B-O pair, which causes a problem to the characteristics of a solar cell.