A method may include stretching a deformable bounding element into a stretched state. The method may further include coating the deformable bounding element with at least one layer of an anti-reflective material while the deformable bounding element is in the stretched state and assembling an optical lens assembly including the deformable bounding element, such that the optical lens assembly adjusts at least one optical property by controlling a shape of the deformable bounding element. The deformable bounding element may have less tension when in a neutral state than the deformable bounding element has when in the stretched state. The method may additionally include coating the deformable bounding element with at least one layer of an anti-reflective material while the deformable bounding element is not in a stretched state. Various other apparatuses, systems, and methods are also disclosed.

A wavelength conversion device including a cavity that includes an RAMO.sub.4 crystal having a single crystal represented by a first general formula of RAMO.sub.4, a laser crystal, and a mirror, in which in the first general formula, R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or a plurality of trivalent elements selected from the group consisting of Fe (III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe (II), Co, Cu, Zn, and Cd.

Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.

Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed. The methods may involve control of the (i) a growth velocity, v, and/or (ii) an axial temperature gradient, G, during the growth of an ingot segment such that v/G is less than a critical v/G and/or is less than a value of v/G that depends on the boron concentration of the ingot. Methods for preparing epitaxial wafers are also disclosed.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot.

A mono-crystalline silicon growth method includes: providing a furnace, a supporting base and a crucible which do not rotate relative to the furnace, and a heating module disposed at an outer periphery of the supporting base. After solidifying a liquid surface of a silicon melt in the crucible to form a crystal, the heating power of the heating module is successively reduced to appropriately adjust the temperature around the crucible to effectively control a temperature gradient of a thermal field around the crucible, so as to form a mono-crystalline silicon ingot by solidifying the silicon melt.

An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate.

Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.

Methods, systems, and apparatuses for generating, producing, and utilizing energy.

The present invention provides a semiconductor crystal growth device, comprising: a furnace body; a crucible disposed inside the furnace body for containing a silicon melt; a pulling unit disposed at a top portion of the furnace body for pulling out a silicon ingot from the silicon melt; and a heat shield unit including a flow tube that is barrel-shaped and disposed around the silicon ingot for rectifying argon gas input from the top portion of the furnace body and adjusting thermal field distribution between the silicon ingot and the silicon melt liquid surface, wherein, the heat shield unit further includes an adjustment unit disposed at a lower end inside the flow tube for adjusting a minimum distance between the heat shield unit and the silicon ingot. According to the present invention, by providing the adjustment unit at the lower end inside the flow tube, it is possible to adjust the distance between the silicon ingot and the adjacent heat shield unit and thereby boost the crystal growth speed and quality, without changing the shape and position of the flow tube.