A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.

Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.

The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1−x−z)X.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1−x−Z)Ce.sub.2xZ.sub.2zSiO.sub.5+z/2O.sub.2↑ or (1−x−y−z)X.sub.2O.sub.3+yY.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1−x−y−z)Y.sub.2yCe.sub.2xZ.sub.2zSiO.sub.5+x/20.sub.2↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.

The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1-x-z)x.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1-x-Z)Ce.sub.2xZ.sub.2zSiO.sub.5+x/2O.sub.2↑ or (1-x-y-z)X.sub.2O.sub.3+yY.sub.2O.sub.3+SiO.sub.2+2xCeO.sub.2+zZ.sub.2O.sub.3.fwdarw.X.sub.2(1-x-y-z)Y.sub.2yCe.sub.2xZ.sub.2zSiO.sub.5+x/2O.sub.2↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.

The present invention is a silicon single crystal substrate for a solid-state image sensor obtained by slicing a silicon single crystal fabricated by a CZ method, where the silicon single crystal substrate is a p-type silicon single crystal substrate whose main dopant is Ga, and the silicon single crystal substrate has a B concentration of 5×10.sup.14 atoms/cm.sup.3 or less. This provides a silicon single crystal substrate and a silicon epitaxial wafer for a solid-state image sensor that can suppress the residual image characteristics of a solid-state image sensor.

A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.

Provided is a large diameter InP single crystal substrate having a diameter of 75 mm or more, which can achieve a high electrical activation rate of Zn over a main surface of the substrate even in a highly doped region having a Zn concentration of 5×10.sup.18 cm.sup.−3 or more; and a method for producing the same. An InP single crystal ingot is cooled such that a temperature difference of 200° C. is decreased for 2 to 7.5 minutes, while rotating the InP single crystal ingot at a rotation speed of 10 rpm or less, and the cooled InP single crystal ingot is cut into a thin plate, thereby allowing production of the InP single crystal substrate having an electrical activation rate of Zn of more than 85% over the main surface of the substrate even in a highly doped region having a Zn concentration of 5×10.sup.18 cm.sup.−3 or more.

A system for growing silicon crystal structures includes a housing defining a growth chamber and a feed system connected to the housing for delivering silicon particles to the growth chamber. The feed system includes a container for holding the silicon particles. The container includes an outlet for discharging the silicon particles. The feed system also includes a channel connected to the outlet such that silicon particles discharged from the container flow through the channel. The feed system further includes a separation valve connected to the channel and to the housing. The separation valve is configured such that a portion of the feed system rotates relative to the housing.