A growth chamber or a Czochralski crystal growth station has one or more re-sealable caps that are inserted into the chamber body. An O-ring seals the cap within its mating portion of the chamber body. The re-sealable caps facilitate re-use of the chamber body for a future crystal growth cycle.

This invention provides a method for growing monocrystalline silicon by applying Czochralski method comprising forming a melt of silicon-containing materials in a crucible and pulling the melt for monocrystalline silicon growth, which is characterized by, the silicon-containing materials comprising a deuterium-implanted nitride-deposited silicon and a monocrystalline silicon, introducing a gas containing argon during formation of the melt, and, applying a magnetic field during the pulling step. This invention also provides a method for producing a wafer based on the above monocrystalline silicon.

Suitability of silicon wafers for use in device processing without generation of fatal defects is assessed by using SIRD to measure stress in a wafer cut from a piece of a crystal ingot after first and second thermal treatments of the water, the second thermal treatment consisting of a heating phase, a holding phase, and a cooling phase. The result is used to consider whether silicon wafers cut from the piece can adequately survive device processing without generating excess defects.

A method of oxidation-combusting an ingot grower comprises a) blocking between the filter housing and the exhaust pipe, b) forming the filter housing in a vacuum state, and c) injecting air into the filter housing through an injection pipe connected to a first side of the filter housing to combust the filter housing.

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×10.sup.14 atoms/cm.sup.3 and/or germanium at a concentration of at least about 1×10.sup.19 atoms/cm.sup.3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

A crystal is of a non-centrosymmetric structure and belongs to the −43 m point group of the cubic crystal system. M denotes an alkaline earth metal, which can be Ba, Ca, or Sr, and RE denotes a rare earth element, which can be Y, La, Gd, or Yb. The growth method of the M.sub.3RE(PO.sub.4).sub.3 crystal comprises steps as follows: (1) polycrystalline material synthesis: MCO.sub.3, RE.sub.2O.sub.3, and phosphorous compound are used as raw materials and blended according to the stoichiometric proportions; then, the phosphorous compound is further added to be excessive; the raw materials are sintered twice to obtain the M.sub.3RE(PO.sub.4).sub.3 polycrystalline material; (2) polycrystalline material melting; (3) Czochralski crystal growth. The M.sub.3RE(PO.sub.4).sub.3 crystal prepared by the invention is a high-quality single crystal.

A transparent complex oxide sintered body is manufactured by sintering a compact in an inert atmosphere or vacuum, and HIP treating the sintered compact, provided that the compact is molded from a source powder based on a rare earth oxide: (Tb.sub.xY.sub.1-x).sub.2O.sub.3 wherein 0.4≤x≤0.6, and the compact, when heated in air from room temperature at a heating rate of 15° C./min, exhibits a weight gain of at least y % due to oxidative reaction, y being determined by the formula: y=2x+0.3. The sintered body has a long luminescent lifetime as a result of controlling the valence of Tb ion.

A transparent complex oxide sintered body is manufactured by sintering a compact in an inert atmosphere or vacuum, and HIP treating the sintered compact, provided that the compact is molded from a source powder based on a rare earth oxide: (Tb.sub.xY.sub.1-x).sub.2O.sub.3 wherein 0.4≤x≤0.6, and the compact, when heated in air from room temperature at a heating rate of 15° C./min, exhibits a weight gain of at least y % due to oxidative reaction, y being determined by the formula: y=2x+0.3. The sintered body has a long luminescent lifetime as a result of controlling the valence of Tb ion.

The disclosed optical lens assemblies may include a deformable optical element including a substantially transparent transducer configured to deform, and thus change at least one optical property of, the deformable optical element. At least a portion of the substantially transparent transducer may be positioned within a substantially transparent optical aperture of the optical lens assembly. Various head-mounted displays incorporating such an optical lens assembly, and methods of fabricating the same, are also disclosed.

The invention relates to scintillation inorganic oxide single crystals with garnet structure, which comprise cerium and are co-alloyed with titanium and Group 2 elements. The invention makes it possible to increase the scintillation output and to enhance the energy resolution of scintillation detectors during gamma-ray quantum registration. The technical result is achieved by a single crystal with a garnet structure being co-alloyed with cerium, titanium and Group 2 elements. This single crystal is produced by the Czochralski process.