The present application is directed to a filter and methods of making the same. The filter includes a block of dielectric material with a top surface including a patterned region, a bottom surface, and side surfaces. The filter also includes a through-hole extending through the block from the top surface to the bottom surface. The through-hole is partially surrounded by the patterned region. The filter also includes a wall extending from the top surface, the wall having an inner surface, an outer surface, and a roof. The bottom surface, side surfaces, outer surface, and roof have a first coating including glass frit. The patterned region, through-hole and inner surface have a second coating including glass frit. The glass frit in the first coating is at least 0.5% greater than the glass frit in the second coating. The application is also directed to a system including a printed circuit board and a filter.

The present application is directed to a filter and methods of making the same. The filter includes a block of dielectric material with a top surface including a patterned region, a bottom surface, and side surfaces. The filter also includes a through-hole extending through the block from the top surface to the bottom surface. The through-hole is partially surrounded by the patterned region. The filter also includes a wall extending from the top surface, the wall having an inner surface, an outer surface, and a roof. The bottom surface, side surfaces, outer surface, and roof have a first coating including glass frit. The patterned region, through-hole and inner surface have a second coating including glass frit. The glass frit in the first coating is at least 0.5% greater than the glass frit in the second coating. The application is also directed to a system including a printed circuit board and a filter.

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber

A substrate processing method is described for forming a titanium nitride material that may be used for superconducting metallization or work function adjustment applications. The substrate processing method includes depositing by vapor phase deposition at least one monolayer of a first titanium nitride film on a substrate, and treating the first titanium nitride film with plasma excited hydrogen-containing gas, where the first titanium nitride film is polycrystalline and the treating increases the (200) crystallographic texture of the first titanium nitride film. The method further includes depositing by vapor phase deposition at least one monolayer of a second titanium nitride film on the treated at least one monolayer of the first titanium nitride film, and treating the at least one monolayer of the second titanium nitride film with plasma excited hydrogen-containing gas.

Efficiency of producing polycrystalline silicon is improved. A silicon filament (11) is constituted by a rod-shaped member made of polycrystalline silicon. The polycrystalline silicon has an interstitial oxygen concentration of not less than 10 ppma and not more than 40 ppma. On a side surface, in a lengthwise direction, of the rod-shaped member, crystal grains each having a crystal grain size of not less than 1 mm are observed.

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.

A method of obtaining multilayer graphene includes the steps of depositing a first graphene monolayer having a protective layer on top thereof, on a sample having a second graphene monolayer grown on a metal foil. The method further includes the steps of attaching to the metal foil at least one second frame, the at least one first frame having a substrate and a thermal release adhesive polymer layer; and removing or detaching the metal foil. Suspended multilayer graphene or the deposited multilayer graphene is obtained by the previous method. A device having suspended multilayer graphene or deposited multilayer graphene is preferably a NEMs or MEMs sensor or a transparent electrode for example for a display or for an organic or inorganic light-emitting diode (OLED/LED).

A method of obtaining multilayer graphene includes the steps of depositing a first graphene monolayer having a protective layer on top thereof, on a sample having a second graphene monolayer grown on a metal foil. The method further includes the steps of attaching to the metal foil at least one second frame, the at least one first frame having a substrate and a thermal release adhesive polymer layer; and removing or detaching the metal foil. Suspended multilayer graphene or the deposited multilayer graphene is obtained by the previous method. A device having suspended multilayer graphene or deposited multilayer graphene is preferably a NEMs or MEMs sensor or a transparent electrode for example for a display or for an organic or inorganic light-emitting diode (OLED/LED).

Methods for fabricating a graphene nanoribbon array in accordance with several embodiments of the present invention can include the steps of depositing PMMA dots on a substrate in an mn grid, to selectively seed graphene flakes on the substrate by controlling the growth of the graphene flakes on the substrate during the graphene deposition. The methods can further include the steps of masking the graphene flake edges with an insulator layer, at a very low deposition time or at a lower precursor concentration, to ensure there are not enough insulator molecules to form a complete layer over the flakes, but only enough insulator to form around the flakes edges. Once the graphene flake edges are masked, the bulk graphene can be etched, and the masking insulator can be removed to expose the resulting graphene nanoribbon.

Growth of single crystal epitaxial films of the perovskite crystal structure by liquid- or vapor-phase means can be accomplished by providing single-crystal perovskite substrate materials of improved lattice parameter match in the lattice parameter range of interest. Current substrates do not provide as good a lattice match, have inferior properties, or are of limited size and availability because cost of materials and difficulty of growth. This problem is solved by the single-crystal perovskite solid solutions described herein grown from mixtures with an indifferent melting point that occurs at a congruently melting composition at a temperature minimum in the melting curve in the pseudo-binary molar phase diagram. Accordingly, single-crystal perovskite solid solutions, structures, and devices including single-crystal perovskite solid solutions, and methods of making single-crystal perovskite solid solutions are described herein.