Disclosed is a method of fabricating a single crystal colloidal monolayer on a substrate. The method includes preparing a pair of adhesive substrates, arranging powder particles between the substrates, and uniaxially rubbing one of the substrates in any one direction to allow the particles to be close-packed between the substrates, thereby forming a single crystal monolayer.

Provided is a supergravity directional solidification melting furnace equipment, including a supergravity test chamber and, mounted in the supergravity test chamber, a high-temperature heating subsystem, a crucible, and an air-cooling system. The supergravity test chamber is mounted with a wiring electrode and a cooling air valve device. The high-temperature heating subsystem is fixed in the supergravity test chamber. The crucible and the air cooling system are provided in the high-temperature heating subsystem. The high-temperature heating subsystem includes upper, middle, and lower furnaces, a mullite insulating layer, upper and lower heating cavity outer bodies, upper and lower heating furnace pipes, and a crucible support base. A high-temperature heating cavity is divided into upper and lower parts, is provided therein with a spiral groove, and is fitted with a heating element. The crucible support base is provided therein with a vent pipe channel into which a cooling air is introduced. The crucible and the air cooling system include air inlet and exhaust pipes, a cooling base, a cooling rate adjustment ring, the crucible, and an exhaust cover.

A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 5 [ppta]≤(Ca1+Ca2)−(Cd1+Cd2)≤26 [ppta].

A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 5 [ppta]≤(Ca1+Ca2)−(Cd1+Cd2)≤26 [ppta].

Electromagnetic waves are uniformly distributed on the light-receiving surface side by taking advantage of their property of being easily concentrated in sharp parts, and the front area (S.sub.A) on the emission surface side is made larger than the back area (S.sub.B) on the light-receiving surface side (S.sub.A/S.sub.B>1), thereby forming a more moderate electric field region. A reduced gold fine particle group (average particle size: 20 nm) was self-assembled on a transparent polyester resin film and half-submerged and fixed. This base material was repeatedly immersed in an electroless gold plating solution so that gold particles were deposited on the gold fine particles. 10 microliters of a protein solution was added dropwise to this nanostructured substrate, and crystallized by a hanging drop vapor diffusion method.

Crystalline α-Fe.sub.2O.sub.3 nanoparticles prepared by ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The crystalline α-Fe.sub.2O.sub.3 nanoparticles have a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 260 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. The crystalline α-Fe.sub.2O.sub.3 nanoparticles have a band gap of 2.10 to 2.16 eV and a mean pore size of 7.25 to 9.25 nm. A method for the photocatalytic decomposition of organic pollutants using the crystalline α-Fe.sub.2O.sub.3 nanoparticles. An antibacterial composition containing the crystalline α-Fe.sub.2O.sub.3 nanoparticles.

Crystalline α-Fe.sub.2O.sub.3 nanoparticles prepared by ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The crystalline α-Fe.sub.2O.sub.3 nanoparticles have a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 260 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. The crystalline α-Fe.sub.2O.sub.3 nanoparticles have a band gap of 2.10 to 2.16 eV and a mean pore size of 7.25 to 9.25 nm. A method for the photocatalytic decomposition of organic pollutants using the crystalline α-Fe.sub.2O.sub.3 nanoparticles. An antibacterial composition containing the crystalline α-Fe.sub.2O.sub.3 nanoparticles.

A semiconductor substrate includes a drift layer of a first layer formed of a single crystal SiC semiconductor and a buffer layer and a substrate layer of a second layer that is formed of a SiC semiconductor which includes a polycrystalline structure and is formed on the surface of the first layer, in which the second layer (12) is formed on the surface of the drift layer of the first layer by means of CVD growth, the drift layer of the first layer is formed by means of epitaxial growth, and accordingly, defects occurring at a junction interface of the semiconductor substrate including the single crystal SiC layer and the polycrystal SiC layer are suppressed, and manufacturing costs are also reduced.

In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement includes a laser mounted outside the chamber which radiates a beam of energy to locally melt precipitates and inclusions. The furnace includes a mechanism to position the laser vertically to, at or near the interface between the formed crystal and crystal melt material above the formed crystal. The crystal material can be CdZnTe.

A method for producing crystalline α-Fe2O3 nanoparticles involving ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The method involves preparing an aqueous extract from the seeds of a plant in the family Linacae and dropwise addition of the extract to the solution of an iron (III)-containing precursor. The method yields crystalline nanoparticles of α-Fe.sub.2O.sub.3 having a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 250 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. A method for the photocatalytic decomposition of organic pollutants using the nanoparticles is disclosed. An antibacterial composition containing the crystalline α-Fe.sub.2O.sub.3 nanoparticles is also disclosed.