A method for producing crystalline α-Fe2O3 nanoparticles involving ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The method involves preparing an aqueous extract from the seeds of a plant in the family Linacae and dropwise addition of the extract to the solution of an iron (III)-containing precursor. The method yields crystalline nanoparticles of α-Fe.sub.2O.sub.3 having a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 250 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. A method for the photocatalytic decomposition of organic pollutants using the nanoparticles is disclosed. An antibacterial composition containing the crystalline α-Fe.sub.2O.sub.3 nanoparticles is also disclosed.

A method for forming a crystalline metal layer on a three-dimensional (3D) substrate is provided. The method includes applying crystal growth ink to a surface of the 3D substrate, wherein the crystal growth ink includes a metal ionic precursor and a structuring liquid; and exposing the 3D substrate to plasma irradiation from plasma in a vacuum chamber to cause the growing of a crystalline metal layer on the 3D substrate, wherein the exposure is based on a set of predefined exposure parameters.

The present disclosure generally relates to compositions comprising substrate-free 2D tellurene crystals, and the method of making and using the substrate-free 2D tellurene crystals. The 2D tellurene crystals of the present disclosure are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A) comprising a peak at 23.79 (2θ±0.1°) and optionally one or more peaks selected from the group consisting of 41.26, 47.79, 50.41, and 64.43 (2θ±0.1°).

The present disclosure generally relates to compositions comprising substrate-free 2D tellurene crystals, and the method of making and using the substrate-free 2D tellurene crystals. The 2D tellurene crystals of the present disclosure are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A) comprising a peak at 23.79 (2θ±0.1°) and optionally one or more peaks selected from the group consisting of 41.26, 47.79, 50.41, and 64.43 (2θ±0.1°).

In general, the systems and methods described in this application relate to laser-induced nucleation in continuous flow. A method of laser-induced nucleation in continuous flow includes injecting a saturated solution, undersaturated solution, or supersaturated solution through an inlet of a device. The method can include converting the saturated solution or undersaturated solution into supersaturated solution by changing a temperature of the saturated solution or undersaturated solution. The method can include passing one or more laser pulses through the supersaturated solution within the device. The method can include flowing the saturated solution, undersaturated solution, or the supersaturated solution through an outlet of the device.

Heterocrystals of metal dichalcogenides and Bi.sub.2S.sub.3, Bi.sub.2Se.sub.3 or Bi.sub.2Te.sub.3 are presented, in which the metal dichalcogenides and Bi.sub.2S.sub.3, Bi.sub.2Se.sub.3 or Bi.sub.2Te.sub.3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

Heterocrystals of metal dichalcogenides and Bi.sub.2S.sub.3, Bi.sub.2Se.sub.3 or Bi.sub.2Te.sub.3 are presented, in which the metal dichalcogenides and Bi.sub.2S.sub.3, Bi.sub.2Se.sub.3 or Bi.sub.2Te.sub.3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.

A method is disclosed for manufacturing lab grown diamond material by plasma enhanced chemical vapour deposition (PECVD). A substrate is exposed to a plasma containing carbon species while supported within a recess in a holder, resulting in a single crystal diamond (SCD) growing on the substrate while polycrystalline diamond (PCD) is deposited on the substrate holder. The relative rate of growth of the single crystal diamond on the substrate and the polycrystalline diamond on the surface of the holder is set, by control of at least one of the applied energy, cooling of the substrate holder and the chemical composition of the process gases, such that the single crystal diamond grown on the substrate protrudes above the surface of the holder and is constrained not to increase or to reduce in cross sectional area with increased distance from the surface of the holder by simultaneous growth of a polycrystalline diamond layer on the surface of the holder.

A method is disclosed for manufacturing lab grown diamond material by plasma enhanced chemical vapour deposition (PECVD). A substrate is exposed to a plasma containing carbon species while supported within a recess in a holder, resulting in a single crystal diamond (SCD) growing on the substrate while polycrystalline diamond (PCD) is deposited on the substrate holder. The relative rate of growth of the single crystal diamond on the substrate and the polycrystalline diamond on the surface of the holder is set, by control of at least one of the applied energy, cooling of the substrate holder and the chemical composition of the process gases, such that the single crystal diamond grown on the substrate protrudes above the surface of the holder and is constrained not to increase or to reduce in cross sectional area with increased distance from the surface of the holder by simultaneous growth of a polycrystalline diamond layer on the surface of the holder.

A method for producing crystalline α-Fe2O3 nanoparticles involving ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The method involves preparing an aqueous extract from the seeds of a plant in the family Linacae and dropwise addition of the extract to the solution of an iron (III)-containing precursor. The method yields crystalline nanoparticles of α-Fe.sub.2O.sub.3 having a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 250 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. A method for the photocatalytic decomposition of organic pollutants using the nanoparticles is disclosed. An antibacterial composition containing the crystalline α-Fe.sub.2O.sub.3 nanoparticles is also disclosed.