A combinatorial synthesis of a heterodiamond unit cell, which entails a step of reacting a tetrahedranoidal molecule with a heteroatom to form heterodiamond unit cell and then heterodiamond mass.

The present disclosure generally relates to compositions comprising substrate-free 2D tellurene crystals, and the method of making and using the substrate-free 2D tellurene crystals. The 2D tellurene crystals of the present disclosure are characterized by an X-ray diffraction pattern (CuK radiation, =1.54056 A) comprising a peak at 23.79 (20.1) and optionally one or more peaks selected from the group consisting of 41.26, 47.79, 50.41, and 64.43 (20.1).

The present disclosure generally relates to compositions comprising substrate-free 2D tellurene crystals, and the method of making and using the substrate-free 2D tellurene crystals. The 2D tellurene crystals of the present disclosure are characterized by an X-ray diffraction pattern (CuK radiation, =1.54056 A) comprising a peak at 23.79 (20.1) and optionally one or more peaks selected from the group consisting of 41.26, 47.79, 50.41, and 64.43 (20.1).

Disclosed herein are methods of preparing a composition comprising crystalline biomolecules, for example, crystalline antibodies. In exemplary embodiments, the method comprises forming a fluidized bed of crystalline biomolecules using, for example, a counter-flow centrifuge to exchange buffer and/or to concentrate the crystalline biomolecules in a solution. Also provided are methods of detecting crystalline biomolecules and/or amorphous biomolecules in a sample.

Embodiments of the disclosure provide a method and apparatus for depositing a layer on a substrate. In one embodiment, the method includes exposing a surface of the substrate disposed within a processing chamber to a fluid precursor, directing an electromagnetic radiation generated from a radiation source to a light scanning unit such that the electromagnetic radiation is deflected and scanned across the surface of the substrate upon which a material layer is to be formed, and initiating a deposition process with the electromagnetic radiation having a wavelength selected for photolytic dissociation of the fluid precursor to deposit the material layer onto the surface of the substrate. The radiation source may comprise a laser source, a bright light emitting diode (LED) source, or a thermal source. In one example, the radiation source is a fiber laser producing output in the ultraviolet (UV) wavelength range.

Embodiments of the disclosure provide a method and apparatus for depositing a layer on a substrate. In one embodiment, the method includes exposing a surface of the substrate disposed within a processing chamber to a fluid precursor, directing an electromagnetic radiation generated from a radiation source to a light scanning unit such that the electromagnetic radiation is deflected and scanned across the surface of the substrate upon which a material layer is to be formed, and initiating a deposition process with the electromagnetic radiation having a wavelength selected for photolytic dissociation of the fluid precursor to deposit the material layer onto the surface of the substrate. The radiation source may comprise a laser source, a bright light emitting diode (LED) source, or a thermal source. In one example, the radiation source is a fiber laser producing output in the ultraviolet (UV) wavelength range.

A semiconductor substrate includes a drift layer of a first layer formed of a single crystal SiC semiconductor and a buffer layer and a substrate layer of a second layer that is formed of a SiC semiconductor which includes a polycrystalline structure and is formed on the surface of the first layer, in which the second layer (12) is formed on the surface of the drift layer of the first layer by means of CVD growth, the drift layer of the first layer is formed by means of epitaxial growth, and accordingly, defects occurring at a junction interface of the semiconductor substrate including the single crystal SiC layer and the polycrystal SiC layer are suppressed, and manufacturing costs are also reduced.

A method for producing crystalline ?-Fe2O3 nanoparticles involving ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The method involves preparing an aqueous extract from the seeds of a plant in the family Linacae and dropwise addition of the extract to the solution of an iron (III)-containing precursor. The method yields crystalline nanoparticles of ?-Fe.sub.2O.sub.3 having a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 250 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3hysteresis loop. A method for the photocatalytic decomposition of organic pollutants using the nanoparticles is disclosed. An antibacterial composition containing the crystalline ?-Fe.sub.2O.sub.3 nanoparticles is also disclosed.

A method for producing crystalline ?-Fe2O3 nanoparticles involving ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The method involves preparing an aqueous extract from the seeds of a plant in the family Linacae and dropwise addition of the extract to the solution of an iron (III)-containing precursor. The method yields crystalline nanoparticles of ?-Fe.sub.2O.sub.3 having a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 250 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3hysteresis loop. A method for the photocatalytic decomposition of organic pollutants using the nanoparticles is disclosed. An antibacterial composition containing the crystalline ?-Fe.sub.2O.sub.3 nanoparticles is also disclosed.

Disclosed is a method of growing a zirconia single crystal that has excellent physical properties free from low-temperature degradation and thus enables precise machining, the method including raw material preparation, raw material charging, raw material melting, melt soaking stage, seed production, and single crystal growth.