Patent classifications
C30B30/00
Monocrystalline zirconia without low-temperature degradation properties and method for growing same
Disclosed is a method of growing a zirconia single crystal that has excellent physical properties free from low-temperature degradation and thus enables precise machining, the method including raw material preparation, raw material charging, raw material melting, melt soaking stage, seed production, and single crystal growth.
Biopolymer concentration method, crystallization method, and nanostructured substrate
Electromagnetic waves are uniformly distributed on the light-receiving surface side by taking advantage of their property of being easily concentrated in sharp parts, and the front area (S.sub.A) on the emission surface side is made larger than the back area (S.sub.B) on the light-receiving surface side (S.sub.A/S.sub.B>1), thereby forming a more moderate electric field region. A reduced gold fine particle group (average particle size: 20 nm) was self-assembled on a transparent polyester resin film and half-submerged and fixed. This base material was repeatedly immersed in an electroless gold plating solution so that gold particles were deposited on the gold fine particles. 10 microliters of a protein solution was added dropwise to this nanostructured substrate, and crystallized by a hanging drop vapor diffusion method.
Manufacturing method of single-crystal silicon substrate
After separation layers are formed inside a single-crystal silicon ingot, a single-crystal silicon substrate is split off from the single-crystal silicon ingot with use of these separation layers as the point of origin. This can improve the productivity of the single-crystal silicon substrate compared with the case of manufacturing the single-crystal silicon substrate from the single-crystal silicon ingot by a wire saw.
Manufacturing method of single-crystal silicon substrate
After separation layers are formed inside a single-crystal silicon ingot, a single-crystal silicon substrate is split off from the single-crystal silicon ingot with use of these separation layers as the point of origin. This can improve the productivity of the single-crystal silicon substrate compared with the case of manufacturing the single-crystal silicon substrate from the single-crystal silicon ingot by a wire saw.
METHOD OF MANUFACTURE OF A WATCH CRYSTAL
A method of manufacturing a diamond watch crystal wherein the present invention employs multiple techniques to produce the final product. The method of the present invention initiates with a chemical vapor deposition process wherein a high purity graphite is employed as the source substrate. This step further deploys utilization of gases, temperature and an energy source to facilitate formation of a diamond layer on the substrate. The present invention provides alternate energy sources during the chemical vapor deposition such as but not limited to, microwave plasma, direct current plasma, inductively-coupled plasma and hot filament techniques. The method of the present invention further deploys a high pressure high temperature step subsequent the chemical vapor deposition step. These two steps are repeated wherein the initial latter step includes a diamond seed. A final high pressure high temperature step is utilized to remove impurities prior to cutting and polishing.
METHOD OF MANUFACTURE OF A WATCH CRYSTAL
A method of manufacturing a diamond watch crystal wherein the present invention employs multiple techniques to produce the final product. The method of the present invention initiates with a chemical vapor deposition process wherein a high purity graphite is employed as the source substrate. This step further deploys utilization of gases, temperature and an energy source to facilitate formation of a diamond layer on the substrate. The present invention provides alternate energy sources during the chemical vapor deposition such as but not limited to, microwave plasma, direct current plasma, inductively-coupled plasma and hot filament techniques. The method of the present invention further deploys a high pressure high temperature step subsequent the chemical vapor deposition step. These two steps are repeated wherein the initial latter step includes a diamond seed. A final high pressure high temperature step is utilized to remove impurities prior to cutting and polishing.
BULK NANOFABRICATION WITH SINGLE ATOMIC PLANE PRECISION VIA ATOMIC-LEVEL SCULPTING OF CRYSTALLINE OXIDES
A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.
Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device
If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.
Method for treating water contaminated with polycyclic organics
A method for producing crystalline -Fe2O3 nanoparticles involving ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The method involves preparing an aqueous extract from the seeds of a plant in the family Linacae and dropwise addition of the extract to the solution of an iron (III)-containing precursor. The method yields crystalline nanoparticles of -Fe.sub.2O.sub.3 having a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 250 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. A method for the photocatalytic decomposition of organic pollutants using the nanoparticles is disclosed. An antibacterial composition containing the crystalline -Fe.sub.2O.sub.3 nanoparticles is also disclosed.
Method for treating water contaminated with polycyclic organics
A method for producing crystalline -Fe2O3 nanoparticles involving ultrasonic treatment of a solution of an iron (III)-containing precursor and an extract from the seeds of a plant in the family Linaceae. The method involves preparing an aqueous extract from the seeds of a plant in the family Linacae and dropwise addition of the extract to the solution of an iron (III)-containing precursor. The method yields crystalline nanoparticles of -Fe.sub.2O.sub.3 having a spherical morphology with a diameter of 100 nm to 300 nm, a mean surface area of 240 to 250 m.sup.2/g, and a type-II nitrogen adsorption-desorption BET isotherm with a H3 hysteresis loop. A method for the photocatalytic decomposition of organic pollutants using the nanoparticles is disclosed. An antibacterial composition containing the crystalline -Fe.sub.2O.sub.3 nanoparticles is also disclosed.