Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

Provided is an indium phosphide substrate having good accuracy of flatness of the orientation flat, and a method for producing the indium phosphide substrate. An indium phosphide substrate having a main surface and an orientation flat, wherein a difference between maximum and minimum values of a maximum height Pz in each of four cross-sectional curves is less than or equal to 1.50/10000 of a length in a longitudinal direction of an orientation flat end face, wherein the four cross-sectional curves are set at intervals of one-fifth of a thickness of the substrate on a surface excluding a width portion of 3 mm inward from both ends of the orientation flat end face in the longitudinal direction of the orientation flat end face, and the maximum height Pz in each of the four cross-sectional curves is measured in accordance with JIS B 0601:2013.

Embodiments described herein relate generally to large scale synthesis of thinned graphite and in particular, few layers of graphene sheets and graphene-graphite composites. In some embodiments, a method for producing thinned crystalline graphite from precursor crystalline graphite using wet ball milling processes is disclosed herein. The method includes transferring crystalline graphite into a ball milling vessel that includes a grinding media. A first and a second solvent are transferred into the ball milling vessel and the ball milling vessel is rotated to cause the shearing of layers of the crystalline graphite to produce thinned crystalline graphite.

Embodiments described herein relate generally to large scale synthesis of thinned graphite and in particular, few layers of graphene sheets and graphene-graphite composites. In some embodiments, a method for producing thinned crystalline graphite from precursor crystalline graphite using wet ball milling processes is disclosed herein. The method includes transferring crystalline graphite into a ball milling vessel that includes a grinding media. A first and a second solvent are transferred into the ball milling vessel and the ball milling vessel is rotated to cause the shearing of layers of the crystalline graphite to produce thinned crystalline graphite.

Provided is an indium phosphide substrate having good linearity accuracy of a ridge line where the main surface is in contact with the orientation flat, and a method for producing the indium phosphide substrate. An indium phosphide substrate having a main surface and an orientation flat, wherein a maximum value of deviation is less than 1/1000 of a length of a ridge line where the main surface is in contact with the orientation flat, when a plurality of measurement points are set at intervals of 2 mm from a start point to an end point at the ridge line, except for a length portion of 3 mm inward from both ends of the ridge line, and based on a reference line which is a straight line connecting the start point and the end point, a distance of each measurement point from the reference line is defined as the deviation of each measurement point.

Provided herein includes a process for forming drug crystals of narrow size distribution and desire dimensions and morphology, the process includes a recrystallization step followed by a resizing step.

A silicon carbide substrate is a silicon carbide substrate including: a first main surface, a shape of the first main surface before the orientation flat is provided being a circle. An average value of LTVs of a plurality of first square regions of a plurality of square regions is less than or equal to 0.75 μm, the plurality of first square regions being disposed in a form of a ring on an outermost side with respect to the center of the circle so as to form an outermost periphery when the central region of the first main surface is divided into the plurality of square regions to provide a largest number of square regions, each of the square regions exactly forming a square having each side of 5 mm.

A method for increasing the conductivity of a metal oxide with crystal structure belonging to the 4/m 32/m point group is provided. Single crystal oxides with crystal structure belonging to 4/m 32/m point group are contacted with nitrogen gas, with oxygen gas, with nitrogen gas, with oxygen gas, then with nitrogen gas to increase the conductivity of the metal oxide with crystal structure belonging to the 4/m 32/m point group.

A method of forming a diamond composite body and the diamond composite body. A first single crystal diamond body is provided, which contains nitrogen and has a uniform strain such that over an area of at least 1×1 mm, at least 90 percent of points display a modulus of strain-induced shift of NV resonance of less than 200 kHz, wherein each point in the area is a resolved region of 50 μm.sup.2. The first single crystal diamond body is treated to convert at least some of the nitrogen to form at least 0.3 ppm nitrogen-vacancy, NV.sup.−, centres. A CVD process is used to grow a second single crystal diamond body on a surface of the first single crystal diamond body. The second single crystal diamond body has an NV concentration less than or equal to 10 times lower than the NV.sup.− concentration in the first single crystal diamond body.