A substrate recycling method according to the present disclosure is intended for allowing reuse of a first processed substrate obtained by detaching a semiconductor device layer formed on a growth substrate. The substrate recycling method includes a first recycling process of, when the first processed substrate has a thickness greater than a predetermined thickness, polishing a surface of the first processed substrate and obtaining the growth substrate, and a second recycling process of, when the first processed substrate has a thickness less than the predetermined thickness, forming a substrate reclamation layer on the first processed substrate, and polishing a surface of the substrate reclamation layer and obtaining the growth substrate.

A substrate recycling method according to the present disclosure is intended for allowing reuse of a first processed substrate obtained by detaching a semiconductor device layer formed on a growth substrate. The substrate recycling method includes a first recycling process of, when the first processed substrate has a thickness greater than a predetermined thickness, polishing a surface of the first processed substrate and obtaining the growth substrate, and a second recycling process of, when the first processed substrate has a thickness less than the predetermined thickness, forming a substrate reclamation layer on the first processed substrate, and polishing a surface of the substrate reclamation layer and obtaining the growth substrate.

High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

Provided is a production method of a SiC wafer which can increase the yield of a SiC wafer which can be prepared from a produced SiC single crystal ingot and the product yield of a semiconductor chip.

In forming cylindrical column parts from a SiC single crystal ingot, the diameters of the cylindrical column parts are gradually changed. Specifically, the SiC single crystal ingot configured to have a frustoconical shape is made into, instead of cylindrical column parts all having identical diameters, cylindrical column parts whose diameters increase from the upper surface toward the lower surface of the SiC single crystal ingot.

A biomedical implant (16, 18) is formed from magnesium (Mg) single crystal (10). The biomedical implant (16, 18) may be biodegradable. The biomedical implant (16, 18) may be post treated to control the mechanical properties and/or corrosion rate thereof said Mg single crystal (10) without changing the chemical composition thereof. A method of making a Mg single crystal (10) for biomedical applications includes filling a single crucible (12) with more than one chamber with polycrystalline Mg, melting at least a portion of said polycrystalline Mg, and forming more than one Mg single crystal (10) using directional solidification.

The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.

A monocrystalline germanium wafer that increases the open-circuit voltage of multijunction solar cells, a method for preparing the monocrystalline germanium wafer and a method for preparing an ingot from which the monocrystalline germanium wafer is prepared. The monocrystalline germanium wafer that increases the open-circuit voltage of the bottom cell of multijunction solar cells is prepared by adjusting the amounts of the co-dopants silicon and gallium in the monocrystalline germanium wafer, the ratio of silicon to gallium in the preparation of the monocrystalline germanium.

A monocrystalline germanium wafer that increases the open-circuit voltage of multijunction solar cells, a method for preparing the monocrystalline germanium wafer and a method for preparing an ingot from which the monocrystalline germanium wafer is prepared. The monocrystalline germanium wafer that increases the open-circuit voltage of the bottom cell of multijunction solar cells is prepared by adjusting the amounts of the co-dopants silicon and gallium in the monocrystalline germanium wafer, the ratio of silicon to gallium in the preparation of the monocrystalline germanium.

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. The silicon carbide substrate (100) comprises a main surface (102) and a circumferential end face surface (114) which is essentially perpendicular to the main surface (102), and a chamfered peripheral region (110), wherein a first bevel surface (106) of the chamfered peripheral region (110) includes a first bevel angle (a1) with said main surface (102), and wherein a second bevel surface (108) of the chamfered peripheral region (110) includes a second bevel angle (a2) with said end face surface (114), wherein, in more than 75% of the peripheral region, said first bevel angle (a1) has a value in a range between 20° and 50°, and said second bevel angle (a2) has a value in a range between 45° and 75°.

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. The silicon carbide substrate (100) comprises a main surface (102) and a circumferential end face surface (114) which is essentially perpendicular to the main surface (102), and a chamfered peripheral region (110), wherein a first bevel surface (106) of the chamfered peripheral region (110) includes a first bevel angle (a1) with said main surface (102), and wherein a second bevel surface (108) of the chamfered peripheral region (110) includes a second bevel angle (a2) with said end face surface (114), wherein, in more than 75% of the peripheral region, said first bevel angle (a1) has a value in a range between 20° and 50°, and said second bevel angle (a2) has a value in a range between 45° and 75°.