The present invention discloses a method for freeze-drying drug liposomes powder assisted by a variable-frequency alternating-current electric field, which includes the following steps: (1) preparing a drug-liposome suspension sample; (2) dehydrating the sample under a 1-10 kHz, 3-10 kV high-voltage alternating current; (3) freezing and drying the sample treated in step (2) at 20 C. to 40 C., under a 10-25 kHz, 0.2-1 kV high-voltage alternating current, until completion of the freezing process; and (4) heating and drying the sample in a vacuum until completion of sublimation and desorption, and obtaining the drug liposomes freeze-dried powder. The present invention not only greatly shortens a freezing and drying time, but also controls a size of nuclei and ice crystals, further ensuring a quality of the freeze-dried powder.

An acoustic energy-transfer system includes: an acoustic chest arranged circumferentially around a container configured to receive a material to be processed; and an ultrasonic transducer arranged circumferentially inside the acoustic chest, the ultrasonic transducer defining an acoustic slot extending through the ultrasonic transducer, the acoustic slot angled with respect to a central axis of the acoustic chest.

An acoustic energy-transfer system includes: an acoustic chest arranged circumferentially around a container configured to receive a material to be processed; and an ultrasonic transducer arranged circumferentially inside the acoustic chest, the ultrasonic transducer defining an acoustic slot extending through the ultrasonic transducer, the acoustic slot angled with respect to a central axis of the acoustic chest.

Provided are an apparatus for treating a substrate and a method for discharge a supercritical fluid, and more particularly, an apparatus for treating a substrate using a supercritical fluid and a method for discharging the supercritical fluid using the same. The apparatus for treating the substrate includes a container for providing a supercritical fluid, a vent line through which the supercritical fluid is discharged from the container, and a freezing prevention unit disposed in the vent line to prevent the supercritical fluid from being frozen.

An acoustic energy-transfer apparatus including: an acoustic chest, the acoustic chest defining an inner chamber sized to receive a material to be processed; and an acoustic device positioned within the acoustic chest and oriented to direct acoustic energy towards the material to be processed. A method for drying a material, the method including: positioning a material in an acoustic chest including an acoustic device; and directing acoustically energized air from the acoustic device at the material within the acoustic chest.

An acoustic energy-transfer apparatus including: an acoustic chest, the acoustic chest defining an inner chamber sized to receive a material to be processed; and an acoustic device positioned within the acoustic chest and oriented to direct acoustic energy towards the material to be processed. A method for drying a material, the method including: positioning a material in an acoustic chest including an acoustic device; and directing acoustically energized air from the acoustic device at the material within the acoustic chest.

Disclosed is a condensate water control dryer. The condensate water control dryer includes: a dryer main body which has a drying space formed therein; a first condensate water panel which is attached, in a first direction, to an inner wall surface of the drying space of the dryer main body and has a superhydrophilic surface; a second condensate water panel which is attached, in a second direction that intersects the first direction, to the inner wall surface of the drying space of the dryer main body and has a superhydrophobic surface; and attachment members which attach the first condensate water panel and the second condensate water panel to the inner wall surface of the dryer main body.

Disclosed is a condensate water control dryer. The condensate water control dryer includes: a dryer main body which has a drying space formed therein; a first condensate water panel which is attached, in a first direction, to an inner wall surface of the drying space of the dryer main body and has a superhydrophilic surface; a second condensate water panel which is attached, in a second direction that intersects the first direction, to the inner wall surface of the drying space of the dryer main body and has a superhydrophobic surface; and attachment members which attach the first condensate water panel and the second condensate water panel to the inner wall surface of the dryer main body.

A drying apparatus having a structure capable of improving condensation efficiency, and a washing machine having the same. The washing machine including a cabinet, a tub installed inside the cabinet, a drum rotatably installed inside the tub, a condenser duct configured to condense moisture in air introduced from the inside the drum, a drying duct configured to heat the air introduced from the condenser duct and supply the heated air to the inside the drum, and a condensation water storage unit formed at a circumference of the condenser duct to store condensation water that is used to condense the moisture in the air moving inside the condenser duct.

According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber.