A thermal radiation element includes a substrate, made of a semiconductor, having a first principal plane and a second principal plane, a first conductor layer and a second conductor layer provided on the first principal plane and the second principal plane, respectively, and an electrode pair provided in an outer edge region of the first conductor layer.

A method for heating ware in a kiln. The ware space of the kiln includes a plurality of temperature control zones oriented in a first direction, and a plurality of temperature control zones oriented in a second direction. The method includes heating the ware space in a first heating stage, a second heating stage, and a third heating stage. At least one of the following conditions is satisfied: (i) in one of the heating stages, a temperature control zone oriented in the first direction has a setpoint temperature that is different from a setpoint temperature of one other temperature control zone oriented in the first direction; and (ii) in one of the heating stages, one temperature control zone oriented in the second direction has a setpoint temperature that is different from a setpoint temperature of one other temperature control zone oriented in the second direction.

A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.

A process and an apparatus are disclosed for improved recovery of metal from hot and cold dross, wherein a dross-treating furnace is provided with a filling material with capacity to store heat. This filling material is preheated to a desired temperature by injection of an oxidizing gas to burn non-recoverable metal remaining in the filling material after tapping of the recoverable metal contained in the dross and discharging of the treatment residue. When dross is treated in such furnace, the heat emanating by conduction from the filling material is sufficient to melt and separate the recoverable metal contained in the dross, without addition of an external heat source, such as fuel or gas burners, plasma torches or electric arcs and without use of any salt fluxes. Furthermore, the recovered metal being in the molten state can be fed to the molten metal holding furnace without cooling the melt.

A process and an apparatus are disclosed for improved recovery of metal from hot and cold dross, wherein a dross-treating furnace is provided with a filling material with capacity to store heat. This filling material is preheated to a desired temperature by injection of an oxidizing gas to burn non-recoverable metal remaining in the filling material after tapping of the recoverable metal contained in the dross and discharging of the treatment residue. When dross is treated in such furnace, the heat emanating by conduction from the filling material is sufficient to melt and separate the recoverable metal contained in the dross, without addition of an external heat source, such as fuel or gas burners, plasma torches or electric arcs and without use of any salt fluxes. Furthermore, the recovered metal being in the molten state can be fed to the molten metal holding furnace without cooling the melt.

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.

A rapid thermal processing method and a rapid thermal processing device are provided. The rapid thermal processing method includes the following operations. A wafer is provided. A first heating operation is performed on the wafer to heat the wafer to a first temperature. The wafer is controlled to start rotating. The first temperature is maintained for a first predetermined time. A second heating operation is performed on the wafer to heat the wafer from the first temperature to a second temperature, and the second temperature is maintained for a second predetermined time. A third heating operation is performed on the wafer to heat the wafer from the second temperature to a third temperature, and the third temperature is maintained for a third predetermined time.

The invention relates to an industrial autoclave used for curing rubber. The autoclave includes a hollow outer body for receiving a product. It also includes a pair of oil-based heat exchangers which are disposed in passageways defined by a pair of ducts. The heat exchangers are connected in parallel to one another in fluid flow communication to a supply of heated oil. Each heat exchanger includes a plurality of serially interconnected, parallel finned radiators which allow passage of the oil therethrough facilitating heat transfer to air passing over the radiators. A fan ensures air circulation. This autoclave is a non-pressurized system with very little wear properties, no risk of fire, no need for a condensate tank and no water treatment is required. In addition, a considerable saving in terms of power consumption is made when compared to electrical autoclaves.

An apparatus, a system and a method are disclosed. An exemplary method includes providing a wafer process chamber and a plurality of radiant heat elements under the wafer process chamber, receiving a wafer holder configured to be used in the wafer process chamber, and processing a wafer located on the wafer holder in the wafer process chamber. The wafer holder includes: a wafer contact portion including an upper surface and a lower surface, an exterior portion including an upper surface and a lower surface, and a tapered region formed in the wafer contact portion.

A heat treatment apparatus for heating, in a treatment container, a substrate on which a coating film is formed. The heat treatment apparatus includes: a mount provided in the treatment container and which mounts the substrate thereon; a heating part that heats the substrate mounted on the mount; a suction pipe leading to a suction port formed in the mount, penetrating the mount, and extending directly downward; and a collection container provided on a suction path between the suction pipe and a suction mechanism. The collection container is provided directly below the mount in plan view and connected to the suction pipe to collect a sublimate in the treatment container.