An arrangement of linear heat lamps is provided which allows for localized control of temperature nonuniformities in a substrate during semiconductor processing. A reactor includes a substrate holder positioned between a top array and a bottom array of linear heat lamps. At least one lamp of the arrays includes a filament having a varying density and power output along the length of the lamp. In particular, at least one lamp of the arrays includes a filament having a higher filament winding density within a central portion of the lamp relative to peripheral portions of the lamp. In some embodiments, the at least one lamp is a central lamp extending across a central portion of the substrate heated by the lamp. Furthermore, at least one lamp of the arrays has a higher power output within a central portion of the lamp than at peripheral portions of the lamp.

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.

Provided is a resin curing device capable of improving work efficiency when curing a liquid resin. A controller (2) of a resin curing device (1) controls opening degrees of three valves (51 to 53) so that a gas flow passage becomes a circulation passage (40) when an execution condition of an operation of feeding air to a curing furnace (10) is satisfied, and controls the opening degrees of the three valves (51 to 53) so that the gas flow passage becomes a bypass passage (41) when the execution condition is not satisfied (STEPS 30 to 41).

A furnace system includes at least one lower radiant section having a first firebox disposed therein and at least one upper radiant section disposed above the at least one lower radiant section. The at least one upper radiant section has a second firebox disposed therein. The furnace system further includes at least one convection section disposed above the at least one upper radiant section and an exhaust corridor defined by the first firebox, the second firebox, and the at least one convection section. Arrangement of the at least one upper radiant section above the at least one lower radiant section reduces an area required for construction of the furnace system.

A furnace system includes at least one lower radiant section having a first firebox disposed therein and at least one upper radiant section disposed above the at least one lower radiant section. The at least one upper radiant section has a second firebox disposed therein. The furnace system further includes at least one convection section disposed above the at least one upper radiant section and an exhaust corridor defined by the first firebox, the second firebox, and the at least one convection section. Arrangement of the at least one upper radiant section above the at least one lower radiant section reduces an area required for construction of the furnace system.

There is provided a cooling unit, comprising: an intake pipe provided for each of a plurality of zones and configured to supply a gas for cooling a reaction tube; a control valve provided in the intake pipe and configured to adjust a flow rate of the gas; a buffer part configured to temporarily store the gas supplied from the intake pipe; and openings provided so as to blow the gas stored in the buffer part toward the reaction tube, wherein the flow rate of the gas introduced into the intake pipe is set according to vertical length ratios of the zones such that the flow rate and a flow velocity of the gas injected from the openings toward the reaction tube are adjusted by opening and closing the control valve.

The invention concerns a method for accentuating the orientation of the grains of a continuous steel sheet (1), in particular for producing electrical sheet steel, said method involving, during the movement of the steel sheet (1) in the longitudinal direction of same, a longitudinal stretching of the steel sheet (1) in a stretch region (1d) in which the steel sheet (1) moves at a temperature of between approximately 750° C. and approximately 900° C. The invention also concerns a device for implementing said method in which the stretching is carried out by two tensioning blocks (41, 42) comprising traction rollers arranged to move and guide the steel sheet (1). The invention further concerns a facility for producing electrical sheet steel comprising a line comprising a rolling mill and on which said method and said device are implemented downstream from the rolling mill.

The invention concerns a method for accentuating the orientation of the grains of a continuous steel sheet (1), in particular for producing electrical sheet steel, said method involving, during the movement of the steel sheet (1) in the longitudinal direction of same, a longitudinal stretching of the steel sheet (1) in a stretch region (1d) in which the steel sheet (1) moves at a temperature of between approximately 750° C. and approximately 900° C. The invention also concerns a device for implementing said method in which the stretching is carried out by two tensioning blocks (41, 42) comprising traction rollers arranged to move and guide the steel sheet (1). The invention further concerns a facility for producing electrical sheet steel comprising a line comprising a rolling mill and on which said method and said device are implemented downstream from the rolling mill.

A method includes identifying first parameters of a first processing chamber of a semiconductor fabrication facility. The first parameters include first input parameters and first output parameters. The method further includes identifying second parameters of a second processing chamber of the semiconductor fabrication facility. The second parameters include second input parameters and second output parameters. The method further includes generating, by a processing device based on the first parameters and the second parameters, composite parameters comprising composite input parameters and composite output parameters. Semiconductor fabrication is based on the composite parameters.

A gas ring is attached to an upper portion of a chamber side portion as a side wall of a chamber. The gas ring is formed by overlapping an upper ring and a lower ring. A gap between the upper ring and the lower ring provides a flow path for processing gas. A labyrinthine resisting unit is formed in the flow path. The mass of the lower ring having an inner wall surface is increased to increase heat capacity. The lower ring is attached to the chamber side portion to be in surface contact with the chamber side portion, so that thermal conductivity from the lower ring to the chamber side portion has a large value, and the amount of heat accumulated in the lower ring is reduced. An increase in temperature of the lower ring at thermal processing is thereby suppressed to prevent discoloration of the gas ring.