A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system configured to flow one or more process gases into the processing chamber from the a first side of the processing chamber, one or more radiative heating sources disposed on the second side of the processing chamber, one or more dielectric windows disposed between the workpiece support and the one or more radiative heating sources, a rotation system configured to rotate the one or more radiative heating sources, and a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a measurement indicative of a temperature of a back side of the workpiece.

The present application provides a baking equipment applied in a display panel manufacturing process. In the present application, the first and second pipes are communicated with each other and evenly distributed inside the baking plate, so that the heating liquid injected from the head end of the first pipe heats the baking plate evenly during flowing through the first and second pipes, which improves the uniformity of the baking temperature of the TFT array substrate to be baked by the baking plate, thereby ensuring the stability of the baking process of the TFT array substrate.

In an embodiment, an apparatus comprising: a heater configured to heat a wafer located on a wafer staging area of the heater, the heater comprising a heater shaft extending below the wafer staging area; and a heater lift assembly comprising: a lift shaft configured to move the heater shaft in a vertical direction; a clamp that connects the heater shaft to the lift shaft; and a damper disposed on top of the clamp.

Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.

An apparatus for processing a substrate may include a processing module including at least one process chamber for processing a desired process on a substrate, an index module for transferring the substrate from an outside into the processing module, and a drying unit for removing a moisture or undesired gases from the at least one process chamber. The drying unit may remove the moisture or the undesired gases from components newly installed in the at least one process chamber.

Provided is a temperature measuring instrument 7 for a high temperature and pressure furnace having a structure capable of preventing relative displacement of an insulating tube 10 with respect to a pair of metal bodies 8a and 8b. A distal end engaging portion 22 is provided in an axial direction end portion of the insulating tube 10. The temperature measuring instrument 7 is additionally provided with connecting members 15 and 17 which connect distal end portions of the pair of metal bodies 8a and 8b to one another. The insulating tube 10 is locked to the connecting members 15 and 17 at the distal end engaging portion 22 in such a way as to restrict relative displacement in the circumferential direction with respect to the pair of metal bodies 8a and 8b.

Provided is a temperature measuring instrument 7 for a high temperature and pressure furnace having a structure capable of preventing relative displacement of an insulating tube 10 with respect to a pair of metal bodies 8a and 8b. A distal end engaging portion 22 is provided in an axial direction end portion of the insulating tube 10. The temperature measuring instrument 7 is additionally provided with connecting members 15 and 17 which connect distal end portions of the pair of metal bodies 8a and 8b to one another. The insulating tube 10 is locked to the connecting members 15 and 17 at the distal end engaging portion 22 in such a way as to restrict relative displacement in the circumferential direction with respect to the pair of metal bodies 8a and 8b.

A heat treatment installation is provided for production of industrial products. The heat treatment installation has several chambers with different thermal characteristics, including: a base (18) to accept the products (22) that are to be treated, a set of several chambers (3,4; 28,29,30) distributed about an axis (7), and mechanical means (6,10) to provide the relative movement of the base (18) and of the chambers (3,4; 28,29,30) and the coupling between a chamber and the base.

The present application discloses a method for purge clean of a low pressure furnace, comprising: step 1, providing a process chamber of the low pressure furnace in a standby state, wherein an inner wall thin film formed by a furnace deposition process is accumulated on the surface of an inner wall of the process chamber; step 2, performing temperature ramp-up or temperature ramp-down treatment on the process chamber to generate first thermal stress in the inner wall thin film, wherein thin film particles with poor adhesion in the inner wall thin film peels off; step 3, introducing a cleaning gas in a pulse manner to perform cycle purge clean on the process chamber, so as to remove the peeling thin film particles from the process chamber; and step 4, switching a state of the process chamber to the standby state after the cycle purge clean ends.

Provided are a heating unit including an air layer for thermal insulation and a substrate treating apparatus including the heating unit. The substrate treating apparatus includes: a housing providing a space in which a substrate is treated; a heating unit disposed in the housing and heating the substrate; a cooling unit disposed in the housing and cooling the substrate; and a transfer unit for moving the substrate, wherein the heating unit includes: a body including a heater therein; a first air layer provided inside the body for thermal insulation and formed in a first direction as a longitudinal direction thereof; and a second air layer provided inside the body for thermal insulation and formed in a second direction as a longitudinal direction thereof.