A molten metal scrap submergence system comprising a furnace and a vortexing scrap submergence well. The vortexing scrap submergence well includes a diverter suspended above the well and oriented for immersion in a bath of molten metal circulating within the well. The system, or an alternative scrap submergence system, can include a hood element disposed in an overlapping position with regard to a top opening of the scrap submergence well. The hood at least substantially seals the top opening. The hood element includes a scrap piece feed chute and a burner allowing carbon containing vapor evaporated from the surface of the molten scrap pieces to combust and form predominantly water. The system, or an alternative scrap submergence system can include internal side walls of the well with a first diameter portion adjacent and above said ramp and a second, larger diameter portion above said first portion.

A molten metal scrap submergence system comprising a furnace and a vortexing scrap submergence well. The vortexing scrap submergence well includes a diverter suspended above the well and oriented for immersion in a bath of molten metal circulating within the well. The system, or an alternative scrap submergence system, can include a hood element disposed in an overlapping position with regard to a top opening of the scrap submergence well. The hood at least substantially seals the top opening. The hood element includes a scrap piece feed chute and a burner allowing carbon containing vapor evaporated from the surface of the molten scrap pieces to combust and form predominantly water. The system, or an alternative scrap submergence system can include internal side walls of the well with a first diameter portion adjacent and above said ramp and a second, larger diameter portion above said first portion.

A heat treatment system disclosed herein may include: one or more saggars, each of which is configured to accommodate powder of a lithium positive electrode material; and a heat treatment furnace configured to heat-treat the powder accommodated in the one or more saggars.

Each of the one or more saggars may include a contact surface which is to make contact with the powder, wherein at least the contact surface of each saggar is constituted of a nickel-based alloy. The heat treatment furnace may be configured to heat-treat the powder accommodated in the one or more saggars at a temperature of 300° C. or more and 1000° C. or less for a duration of 10 hours or more and 30 hours or less.

A heating device and a heating chamber are provided, comprising a base plate (21), at least three supporting columns (22) and a heating assembly, where the at least three supporting columns are arranged vertically on the base plate and are distributed at intervals along a circumferential direction of the base plate Top ends of the at least three supporting columns form a bearing surface for supporting a to-be-heated member (23). The heating assembly includes a heating light tube (24) and a thermal radiation shielding assembly, where the heating light tube is disposed above the base plate and below the bearing surface. A projection of an effective heating area formed by uniform distribution of the heating light tube on the base plate covers a projection of the bearing surface on the base plate. The thermal radiation shielding assembly shields heat radiated by the heating light tube towards surroundings and bottom.

A method for forming large titanium parts includes forming bends into a titanium plate for form a bent part. The bent part is then roll-formed to form contours into the bent part. The surfaces of the contoured part are rough-machined, and the part is then secured to a bladed form fixture. The bladed form fixture comprises a plurality of header boards that secure the part to the fixture. The fixture part is placed in a thermal vacuum furnace and a stress-relieving operation is performed. The part is removed from the fixture and final machining takes place.

A method for forming large titanium parts includes forming bends into a titanium plate for form a bent part. The bent part is then roll-formed to form contours into the bent part. The surfaces of the contoured part are rough-machined, and the part is then secured to a bladed form fixture. The bladed form fixture comprises a plurality of header boards that secure the part to the fixture. The fixture part is placed in a thermal vacuum furnace and a stress-relieving operation is performed. The part is removed from the fixture and final machining takes place.

The embodiments described herein generally relate to a lamphead assembly with an absorbing upper surface in a thermal processing chamber. In one embodiment, a processing chamber includes an upper structure, a lower structure, a base ring connecting the upper structure to the lower structure, a substrate support disposed between the upper structure and the lower structure, a lower structure disposed below the substrate support, a lamphead positioned proximate to the lower structure with one or more fixed lamphead positions formed therein, the lamphead comprising a first surface proximate the lower structure and a second surface opposite the first surface, wherein the first surface comprises an absorptive coating and one or more lamp assemblies each comprising a radiation generating source and positioned in connection with the one or more fixed lamphead positions.

A support device that has a central axis and includes three uprights extending substantially parallel to the central axis, a plurality of series of support members spaced along the central axis, each series of support members comprising three support members adapted to support one wafer of the plurality of wafers and extending in different essentially longitudinal directions transverse to the central axis, each support member being mounted directly on a separate upright, this support device being remarkable in that the directions of the three support members of each series of support members are concurrent at a point on the central axis.

A wafer baking apparatus includes a chamber including a processing space, and a wafer heater disposed in the processing space and configured to support a wafer. The wafer heater includes a first heating plate, a heating resistance pattern disposed on a lower surface of the first heating plate, a second heating plate disposed on the first heating plate, and a heat dispersion layer interposed between the first and second heating plates and having thermal conductivity lower than a thermal conductivity of materials of the first and second heating plates.

A self-contained heated wax treatment apparatus includes an outer shell and a rack disposed inside the outer shell. The rack includes a receptacle holder and at least one heater holder. At least a first receptacle is mounted to the receptacle holder of the rack. The first receptacle contains a heat activated substance. A heater is mounted to the heater holder of the rack in thermal conductive contact with the first receptacle. Activation of the heater causes heat to flow to the first receptacle and activate the heat activated substance inside the receptacle.