A transport trough, in particular for a continuous furnace for transporting and heating of chemical substances, includes a flat bottom, and a circumferential frame which, together with the bottom, forms a trough-shaped cavity for holding the chemical substances, wherein the frame is connected to the bottom in a non-destructively detachable manner.

A process chamber includes one or more vertical walls at least partially defining a chamber portion of the process chamber, and multiple zones located about a periphery of the one or more vertical walls, wherein one or more of the multiple zones extends from a top to a bottom of the one or more vertical walls. The process chamber further includes a plurality of temperature control devices, each thermally coupled to the one or more vertical walls in one of the multiple zones, and a controller coupled to the plurality of temperature control devices and configured to set temperatures of one or more of the plurality of temperature control devices to obtain temperature uniformity within 2% across a substrate located in the chamber portion.

The inventive concept provides an apparatus for treating a substrate by using a supercritical fluid. In an embodiment, the apparatus may include a process chamber that provides a treatment space, and including a chamber heater that increases a temperature of an interior of the treatment space, a substrate support provided in the treatment space and that supports the substrate, and a substrate heating member that heats a lower surface of the substrate while contacting the lower surface of the substrate.

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.

In an embodiment, an apparatus comprising: a heater configured to heat a wafer located on a wafer staging area of the heater, the heater comprising a heater shaft extending below the wafer staging area; and a heater lift assembly comprising: a lift shaft configured to move the heater shaft in a vertical direction; a clamp that connects the heater shaft to the lift shaft; and a damper disposed on top of the clamp.

In various embodiments, apparatuses for receiving and supporting one or more components during processing thereof at process temperatures greater than approximately 1000° C. feature refractory metal shelves separated by refractory metal support posts.

Disclosed are a sagger for sintering lithium composite transition metal oxide and a preparation method thereof. The sagger includes a substrate layer and a shallow layer on a surface of the substrate layer, and a coating layer. The substrate layer is prepared from the following raw materials: silicon carbide, magnesia-alumina spinel, aluminum oxide-magnesium oxide-yttrium oxide composite fiber, zircon powder and a binding agent; the shallow layer is prepared from the following raw materials: silicon carbide, magnesia-alumina spinel, aluminum oxide-titanium oxide composite fiber, yttrium oxide-zirconium oxide composite fiber and a binding agent; and the coating layer is prepared from the following raw materials: silicon carbide, magnesia-alumina spinel, magnesium oxide, zirconium oxide fiber, lithium composite transition metal oxide powder and a binding agent. The sagger of the present disclosure has properties of good corrosion resistance and a small coefficient of thermal expansion.

A method of heating direct reduced iron between a direct reduced iron source and processing equipment for the direct reduced iron, comprises providing a conduit heater assembly between the direct reduced iron source and the processing equipment, wherein the conduit heater assembly receives a flow of the direct reduced iron from the direct reduced iron source and heats the direct reduced iron as the direct reduced iron flows through the conduit heater assembly and to the processing equipment.

A heater and/or cooler chamber includes a heat storage block or chunk. In the block a multitude of parallel, stacked slit pockets are each dimensioned to accommodate a single plate shaped workpiece. Workpiece handling openings of the slit pockets are freed and respectively covered by a door arrangement. The slit pockets are tailored to snugly surround the plate shaped workpieces therein so as to establish an efficient heat transfer between the heat storage block or chunk and the workpieces to be cooled or heated.

A high-temperature forming device for imperfect single-crystal wafers used for a neutron monochromator includes a heating electric furnace, a temperature control system, a die system, a loading system, a vacuum protection system, and an auxiliary system. Where a furnace mouth of the heating electric furnace faces downwards, the heating electric furnace can be lifted vertically or a hearth of the heating electric furnace can be opened and closed. A vacuum protection cavity is formed by a glass cover and a blocking flange, a through hole is formed in one end of the glass cover, and the other end of the glass cover is closed. An operation opening is formed in the glass cover, the die system includes an upper die, a middle die, and a lower die, the middle die is a composite die.