Described is a device for detecting a surface of bulk materials, the device including: a transmitter unit having a radiation direction for transmitting a measuring signal, a receiver unit for receiving a measuring signal reflected on the surface of the bulk material, a control and evaluation unit for controlling the alignment of the radiation direction and for evaluating the received measuring signal, and an alignment arrangement for aligning the transmitter unit. The alignment arrangement includes at least one connecting element for connection to the transmitter unit, at least one bearing element, and at least one positioning member. The connecting element is pivotably connected to the bearing element via the positioning member. The alignment of the transmitter unit can be changed by the positioning member. The positioning member includes a shape memory element that actively changes its shape under variations of an influencing parameter.

Described is a device for detecting a surface of bulk materials, the device including: a transmitter unit having a radiation direction for transmitting a measuring signal, a receiver unit for receiving a measuring signal reflected on the surface of the bulk material, a control and evaluation unit for controlling the alignment of the radiation direction and for evaluating the received measuring signal, and an alignment arrangement for aligning the transmitter unit. The alignment arrangement includes at least one connecting element for connection to the transmitter unit, at least one bearing element, and at least one positioning member. The connecting element is pivotably connected to the bearing element via the positioning member. The alignment of the transmitter unit can be changed by the positioning member. The positioning member includes a shape memory element that actively changes its shape under variations of an influencing parameter.

A non-contact angle measuring apparatus includes a matter-wave and energy (MWE) particle source and a detector. The MWE particle source is used for generating boson or fermion particles. The detector is used for detecting a plurality peaks or valleys of an interference pattern generated by 1) the boson or fermion particles corresponding to a slit, a bump, or a hole of a first plane and 2) matter waves' wavefront-split associated with the boson or fermion particles reflected by a second plane, wherein angular locations of the plurality peaks or valleys of the interference pattern, a first distance between a joint region of the first plane and the second plane, and a second distance between the detector and the slit are used for deciding an angle between the first plane and the second plane.

A non-contact angle measuring apparatus includes a matter-wave and energy (MWE) particle source and a detector. The MWE particle source is used for generating boson or fermion particles. The detector is used for detecting a plurality peaks or valleys of an interference pattern generated by 1) the boson or fermion particles corresponding to a slit, a bump, or a hole of a first plane and 2) matter waves' wavefront-split associated with the boson or fermion particles reflected by a second plane, wherein angular locations of the plurality peaks or valleys of the interference pattern, a first distance between a joint region of the first plane and the second plane, and a second distance between the detector and the slit are used for deciding an angle between the first plane and the second plane.

A method for determining an inner diameter of a sounding tube, which, for measuring the fill level of a fill substance located in a process space of a container, extends in the process space, or is placed alongside the container and connected with the process space. The method can be implemented in the case of a fill-level measuring device working according to the FMCW-principle. Besides the intermediate frequency of the difference signal, also its phase shift is ascertained, wherein the exact tube inner diameter can be determined based on the phase shift. An advantage of the method is that the fill-level measuring device with the help of the then exactly known tube diameter can be recalibrated and accordingly the fill level determined more exactly. The exact tube inner diameter does not have to have been previously known.

A method for determining an inner diameter of a sounding tube, which, for measuring the fill level of a fill substance located in a process space of a container, extends in the process space, or is placed alongside the container and connected with the process space. The method can be implemented in the case of a fill-level measuring device working according to the FMCW-principle. Besides the intermediate frequency of the difference signal, also its phase shift is ascertained, wherein the exact tube inner diameter can be determined based on the phase shift. An advantage of the method is that the fill-level measuring device with the help of the then exactly known tube diameter can be recalibrated and accordingly the fill level determined more exactly. The exact tube inner diameter does not have to have been previously known.

An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.

An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.

A chuck interface that includes a mirror; an inner surface that is shaped and sized to match a portion of a sidewall of a chuck; wherein the inner surface is mechanically coupled to the mirror; and at least one interfacing element for assisting in attaching the chuck to the mirror; and wherein a difference between a thermal expansion coefficient of the chuck and a thermal expansion coefficient of the mirror does not exceed 0.5 micron*Kelvin per Meter.

There is provided a method for at least partly determining the orientation of an edge-on x-ray detector with respect to the direction of x-rays from an x-ray source. The method includes obtaining (S1) information from measurements, performed by the x-ray detector, representing the intensity of the x-rays at a minimum of two different relative positions of a phantom in relation to the x-ray detector and the x-ray source, the phantom being situated between the x-ray source and the x-ray detector and designed to embed directional information in the x-ray field when exposed to x-rays. The method also includes determining (S2) at least one parameter associated with the orientation of the x-ray detector with respect to the direction of x-rays based on the obtained information from measurements and a geometrical model of the spatial configuration of the x-ray detector, x-ray source and phantom.