A temperature sensor that is insensitive to process variation and mismatch is disclosed. The temperature sensor includes a PTAT voltage generator, a sampling and gain boosting circuit, a filter and a controller. The PTAT voltage generator utilizes a plurality of current sources, each of which is in electrical communication with the same diode, or diode stack. The output of the PTAT voltage generator is sampled and amplified with the sampling and gain boosting circuit. The output of the sampling and gain boosting circuit is then filtered using a low pass filter. The selection of the current mirrors, the sampling timing and other signals are provided by the controller. In some simulations, the output from the temperature sensor was accurate to within 1.5° C., using a one temperature calibration process.

A temperature sensor that is insensitive to process variation and mismatch is disclosed. The temperature sensor includes a PTAT voltage generator, a sampling and gain boosting circuit, a filter and a controller. The PTAT voltage generator utilizes a plurality of current sources, each of which is in electrical communication with the same diode, or diode stack. The output of the PTAT voltage generator is sampled and amplified with the sampling and gain boosting circuit. The output of the sampling and gain boosting circuit is then filtered using a low pass filter. The selection of the current mirrors, the sampling timing and other signals are provided by the controller. In some simulations, the output from the temperature sensor was accurate to within 1.5° C., using a one temperature calibration process.

A temperature drift compensation method includes pre-aging a thermocouple, during which the thermocouple is subjected to temperatures and/or pressures that cause or facilitate an oxidation growth on the conductor elements of the thermocouple. During the pre-aging, temperature readings of the thermocouple are recorded, and a model including a time-based exponential expression is derived from the temperature readings. In addition, a temperature sensor system includes a pre-aged thermocouple, and a temperature compensation circuit that modifies initial temperature readings from the pre-aged thermocouple according to a model including a time-based exponential expression.

A heat amount measuring method includes a first step of providing a heat-transferring component that transfers and receives heat to and from a heating component and measuring, while the heating component is generating heat, a first heat amount of heat transmitted from the heating component to the heat-transferring component, a first heating component temperature, and a first substrate temperature, a second step of changing an output of the heat-transferring component and measuring a second heat amount of heat transmitted from the heating component to the heat-transferring component, a second heating component temperature, and a second substrate temperature, and a third step of calculating a heat amount of heat transmitted from the heating component to a substrate by using the first heat amount, the first heating component temperature, the first substrate temperature, the second heat amount, the second heating component temperature, and the second substrate temperature.

A system includes a conditioning circuit, resistors connected to pins of the conditioning circuit, and measurement sensors connected to pins of the conditioning circuit. The conditioning circuit is configured to determine resistance values of the resistors and to determine a set of addresses for the measurement sensors based upon a combination of the resistance values of the resistors.

A system includes a conditioning circuit, resistors connected to pins of the conditioning circuit, and measurement sensors connected to pins of the conditioning circuit. The conditioning circuit is configured to determine resistance values of the resistors and to determine a set of addresses for the measurement sensors based upon a combination of the resistance values of the resistors.

A storage battery device including a housing, battery packs, and a heat detection member having a linear structure. The battery packs are accommodated in the housing. The battery packs are electrically connectable to each other. The heat detection member has a heat detection function and continuously extends while making thermal contact with a member located near bottom surfaces of the battery packs.

A storage battery device including a housing, battery packs, and a heat detection member having a linear structure. The battery packs are accommodated in the housing. The battery packs are electrically connectable to each other. The heat detection member has a heat detection function and continuously extends while making thermal contact with a member located near bottom surfaces of the battery packs.

A temperature calibration sheet includes a main body and a plurality of test keys arranged in the main body. The test keys have voltage-temperature characteristic curves corresponding to a set current. Temperatures of the test keys are obtained by detecting voltages of the test keys. The temperature calibration sheet can simulate a state of a wafer, sidewalls of the test keys are not exposed to the air, and the state of the temperature calibration sheet arranged on a semiconductor machine is the same as that of the wafer arranged on the semiconductor machine, such that the temperature of the temperature calibration sheet can truly reflect the temperature of the wafer when arranged on the semiconductor machine, and the temperature of the semiconductor machine can be calibrated accurately.

A temperature calibration sheet includes a main body and a plurality of test keys arranged in the main body. The test keys have voltage-temperature characteristic curves corresponding to a set current. Temperatures of the test keys are obtained by detecting voltages of the test keys. The temperature calibration sheet can simulate a state of a wafer, sidewalls of the test keys are not exposed to the air, and the state of the temperature calibration sheet arranged on a semiconductor machine is the same as that of the wafer arranged on the semiconductor machine, such that the temperature of the temperature calibration sheet can truly reflect the temperature of the wafer when arranged on the semiconductor machine, and the temperature of the semiconductor machine can be calibrated accurately.