A control circuit turns ON or OFF a switch that is provided at a midpoint of a wire. Thus, power supply via the wire is controlled. A current output circuit outputs a current that corresponds to a current flowing through the wire to a resistance circuit. In the resistance circuit, a series circuit of a resistor (R2) and a capacitor (C1) is connected in parallel to a resistor (R1). The control circuit) turns OFF the switch if the end-to-end voltage value of a voltage across both ends of the resistance circuit is larger than or equal to a reference voltage value.

A medical ultrasound device is disclosed. The device comprises an elongated body having a proximal end, a distal end (10) and a distal end region (1). One or more ultrasound transducers (4) for generating acoustic radiation are positioned in the distal end region, inside the elongated body. A transmission element (5) which is substantially transparent to acoustic radiation is positioned in the radiation path of the acoustic radiation, and a controller unit is operatively connected to the ultrasound transducer. The controller unit detects the acoustic path length through the transmission element and determines the temperature at the distal end from the detected acoustic path length. In an embodiment, the medical device is an ultrasound RF ablation catheter.

Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.

Provided is an aerosol generation device that suppresses the effect that errors in the production of structural elements have on the accuracy with which shortage of an aerosol source is detected. An aerosol generation device that comprises: a power source 110; a load 132 that has a temperature-variable electrical resistance value and atomizes an aerosol source by generating heat due to supply of power from the power source 110; a first circuit 202 that is used for the load 132 to atomize the aerosol source; a second circuit 204 that is connected in parallel to the first circuit 202, has a higher electrical resistance value than the first circuit 202, and is used to detect voltage that changes as a result of changes in the temperature of the load 132; an acquisition part that acquires the value of voltage that is applied to the second circuit 204 and the load 132; and sensors 112B, 112D that output the value of the voltage that changes as a result of changes in the temperature of the load 132.

An over-the-air test system for measuring the radiation performance as a function of temperature of a device under test is described, wherein the device under test has at least one antenna unit and at least one radio frequency circuit. The over-the-air test system comprises a measurement antenna unit, a measurement unit for at least one of signal generation and signal analysis, an enclosure that provides an internal space for accommodating the device under test for testing purposes in a sealed manner, and an atmosphere conditioning system that is configured to adapt the atmosphere within the internal space. The enclosure comprises at least one sealable opening via which the internal space is connectable with the atmosphere conditioning system to adapt the atmosphere within the internal space for the testing. Further, a method for measuring the over-the-air performance of a device under test is described.

An electronic circuit for sensing a temperature rise in a power transistor device, the temperature rise caused by a current flow in the power transistor device. The power transistor device and a sense-FET are disposed on a substrate. The sense-FET senses a fractional portion of the current flow and outputs a current signal. A JFET has its drain connected to the drain of the power transistor device. The gate of the JFET is connected to the source of the power transistor device, such that when the power transistor device is on, the JFET is also turned on, and a drain voltage signal of the power transistor device is output at a second node of the JFET. A detection circuit receives the drain voltage signal and the current signal and outputs an alarm signal when the drain-source resistance of the power transistor device exceeds a combined threshold limit.

A microheater performs a self measurement of its own temperature. The microheater has an electrically resistive element which generates heat when a voltage has been applied across the resistive element. The resistive element has an electrical conductivity that is a function of its temperature. A measurement device is positioned within the microheater body and is configured to measure conductivity of the resistive element. An electronic processor, that may be incorporated into the microheater, controls brief interruption of the heating voltage and application of a lower voltage for measuring conductivity. The lower voltage is insufficient to increase the heat output of the microheater, and is applied for too short of a period to allow excessive cooling of the microheater. A microprocessor receives and processes the data obtained from measuring conductivity.

A temperature sensor having a two-state input current, an element whose temperature is sensed based on a change in voltage across the element induced by the two states of the input current, a charge-to-digital converter, and a capacitor continuously connected between the element and the charge-to-digital converter. The capacitor experiences a charge difference due to the change in voltage across the element induced by the two states of the input current, and the charge-to-digital converter converts the charge difference to a digital value indicative of the temperature of the element. A two-state DC-shifting current having opposite polarity of the two-state input current, a pull-down resistor whose voltage varies with the two-states of the DC-shifting current, and a second capacitor continuously connected between the pull-down resistor and the charge-to-digital converter operate to shift down a DC operating point of the charge-to-voltage converter to increase its dynamic range.

An electric wire protection device includes a voltage adjusting unit that adjusts voltage of a power source side and supplies the resulting voltage to a load, and a controller that includes a calculation unit configured to compute temperature information of an electric wire connecting the power source and the load from a value of an electric current flowing through the voltage adjusting unit, and that is configured to make the voltage adjusting unit into a shutoff state of shutting off the power source and the load on the basis of the temperature information.

Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.