A vehicle pane with a temperature sensor, includes a substrate and a transparent, electrically conductive coating on a surface of the substrate, wherein a temperature measuring field that is electrically isolated from the surrounding electrically conductive coating by a separating line is formed in the electrically conductive coating, a measurement current path running between two electrical contact points is formed from a region of the electrically conductive coating in the temperature measuring field, the electrical contact points can be connected to a voltage source such that an electric current flows through the measurement current path, and the electrical contact points can be connected to an analysis unit that is suitable for measuring the current strength of the electric current, determining the electrical resistance of the measurement current path therefrom, and determining the temperature from the electrical resistance using calibration data.

Methods and apparatus for determining the temperature of a pixel array. In embodiments, a first pixel in a pixel array is reverse-biased and a second pixel in the pixel array is forward-biased. A voltage for the second pixel can be measured to determine a temperature of the pixel array from the measured voltage for the second pixel.

A system for determining the temperature of a voice coil of a speaker includes a first pre-emphasis filter which has an input coupled to receive a digitized current sense signal. The first pre-emphasis filter applies a gain to signal components at a selected frequency band and provides a pre-emphasized current sense signal. The system includes a second pre-emphasis filter which has an input coupled to receive a digitized voltage sense signal. The second pre-emphasis filter applies a gain to the signal components at the selected frequency band and provides a pre-emphasized voltage sense signal. The system includes a first quantizer module configured to map the pre-emphasized signal to a quantized current sense signal, and includes a second quantizer module configured to map the pre-emphasized voltage sense signal to a quantized voltage sense signal.

A method for estimating a heat generation distribution in a honeycomb structure includes: a first step of allowing a predetermined minute current to flow between electrode layers A1 and B1 to energize a honeycomb structure, and measuring surface potentials at multiple points; a second step of allowing a predetermined minute current to flow between electrode layers A2 and B2 to energize the honeycomb structure, and measuring surface potentials at multiple points; a third step of quantifying, based on the measured surface potentials at the multiple points, at least one of resistances at the multiple points in the honeycomb structure, resistance ratios for energization paths, voltage sharing ratios, and surface potentials of the electrode layers A1, A2, B1 and B2; and a step of estimating a heat generation distribution in the honeycomb structure based on the values quantified in the third step.

A temperature sensor is described for detecting a temperature of a battery cell. The temperature sensor has a first electrical conductor having a first end for connecting the first conductor to an element of the battery cell and having a second end for connecting the first conductor to a first input of a measuring device and a second electrical conductor having a first end for connecting the second conductor to the element of the battery cell and having a second end for connecting the second conductor to a second input of the measuring device.

A method is provided for characterizing junction temperatures of power diodes devices, each of the diode devices being one-to-one connected in antiparallel to each power semiconductor switching devices of a voltage source inverter having processing and measuring capability, the method including: an initialization stage, wherein a heater is thermally coupled with a heatsink and/or with a direct bonded copper element of the voltage source inverter; a temperature setting stage, wherein the temperature of the direct bonded copper element and/or the heatsink is increased up to a maximum operative temperature; a commissioning stage, wherein at each current pulse of a current pulses train sampled data are collected in a sampling period wherein the corresponding power semiconductor switching device connected with at least one of the power semiconductor diode devices is turned-off; an output stage, wherein the processor generates, from the sampled data, processed data for at least one of the power semiconductor diode devices.

A temperature probe for determining the temperature according to the three-point probe method includes a three-wire line several meters long consisting of a first connecting line, a second connecting line, and a third connecting line connected to sensor element. The connecting lines are made of a first material and serve to transmit energy and the measured temperature values. A conductive element made of a second material is inserted in the second connecting line and in the third connecting line. The resistivity of said second material is higher than the resistivity of the first material. The two inserted conductive elements are designed in such that the second connecting line and the third connecting have the same resistance as the first connecting line. Additionally, the present disclosure refers to a method describing the manufacture of a temperature probe.

Method for the manufacture of a temperature sensor with a thermocouple comprising the following successive steps: a) introduction, in a support tube made of a ceramic material, of two thermocouple wires until they extend beyond said support tube; b) welding the ends of said thermocouple wires extending beyond said support tube so as to form a thermocouple hot point; c) introduction, at least partially, of the support tube into a reinforcement tube made of a stainless steel; d) fixing a cap onto said reinforcement tube so as to protect said hot point.

The internal temperate of a transistor is determined by detecting a voltage though a terminal of an integrated circuit that is also used by an overcurrent detection circuit of the integrated circuit for detecting an overcurrent condition of the system. The overcurrent detection circuit is coupled to a current electrode of the transistor through the terminal of the integrated circuit. A determination of internal temperature is based on a voltage measurement taken from the terminal during an on phase of the transistor. The voltage measurement is converted to a digital value and is used to determine an internal temperature of the transistor.

The present invention provides a semiconductor device having a sensor capable of improving precision while suppressing increase in occupation area. A semiconductor device has: a first counter; and a second counter (time measuring circuit) measuring time until a count value, which is obtained by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the first counter. The first counter obtains a piece of digital information corresponding to the first voltage on the basis of a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, on the basis of the time measured by the time measuring circuit.