An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a first circuit to generate a temperature-dependent voltage (TDV) that is dependent on an operating temperature of the integrated circuit, and a second circuit to generate a plurality of temperature reference voltages, based on or more codes. One or more comparator circuits compare individual ones of the plurality of reference voltages with the TDV, to generate one or more comparison signals that are indicative of the operating temperature of the integrated circuit.

A temperature exposure detection system includes a plurality of nonvolatile memory cells. The memory includes memory read circuitry for reading the plurality of memory cells to determine a data retention error rate of the plurality of memory cells. The temperature exposure detection system determines a temperature exposure of the system based on the determined data retention error rate.

A method analyzes an operation of a power semiconductor device. The method includes: providing a set of reference voltages of the power semiconductor device and a set of corresponding reference currents; measuring an on-state voltage and a corresponding on-state current of the power semiconductor device to obtain a measurement point; adapting the set of reference voltages by adapting two of the set of reference voltages lying closest to the measurement point by extrapolating the measurement point; and using the adapted set of reference voltages to analyze the operation of the power semiconductor device. The extrapolation is based on a predefined reference increment current and a predefined reference increment voltage.

A parameter determining apparatus for estimating temperature of a switching element of an inverter is disclosed. The parameter determining apparatus of the present disclosure includes an inverter unit including a power semiconductor module configured with at least one or more switching elements, and a control unit configured to determine an initial collector-emitter voltage of each of the switching elements and collector-emitter resistance of each thereof by linearizing a collector-emitter voltage of each of the switching elements at a certain temperature.

A photovoltaic device having a perovskite PV cell having reduced aging. The internal temperature of the perovskite PV cell, or a measure thereof, is determined using a measurement of an electrical parameter. In the case that it is detected that the corresponding measured value exceeds a threshold value, i.e., that the internal temperature is too high, the operating conditions of the perovskite PV cell are adjusted to the effect that the internal temperature reduces again. This can be achieved, for example, by an input resistance of power electronics of the perovskite PV cell being adjusted such that lower ohmic losses occur, as a result of the correspondingly altered electric currents.

A processing system includes sensor circuitry and processing circuitry. The sensor circuitry is configured to be coupled to force sensor electrodes, and is configured to drive the force sensor electrodes to obtain capacitive measurements. The processing circuitry is operatively connected to the sensor circuitry and configured to aggregate the capacitive measurements into an aggregated measurement, and apply, to the aggregated measurement, a capacitive measurement to temperature mapping to obtain a current temperature of the force sensor electrodes.

A device for determining a temperature of a semiconductor power switch with a built-in temperature-dependent gate resistor may include a non-inverting amplifier circuit comprising an operational amplifier and a feedback resistor. Inverting input of the operational amplifier may be connected to the semiconductor power switch such that a gain of the non-inverting amplifier circuit in a predefined frequency range of an input signal depends on the built-in temperature-dependent gate resistor and the feedback resistor and is a measure of the temperature of the semiconductor power switch. The feedback resistor may be disposed between a negative input and an output of the operational amplifier.

Techniques and circuitry, in one embodiment, determine a temperature of a battery by applying a calibration packet to the battery's terminals and at the battery's first SOC, wherein the calibration packet includes a first pulse (charge or discharge) which temporally precedes a rest period. In one embodiment, measurement circuitry measures a first terminal voltage at a time immediately prior to or at a beginning of the first pulse of the calibration packet, and a second terminal voltage, in response to the calibration packet, at a time during the partial relaxation time period of a battery. Control circuitry determines a partial relaxation time voltage (V.sub.PRT) at the battery's first SOC using the first and second terminal voltages and determines a temperature of the battery by correlating the V.sub.PRT at the first SOC to a temperature of the battery at the battery's current SOH.

To determine the temperature of a link capacitor (C) of a link converter (1) more accurately with less expenditure, a device and a method are described, in which the link capacitor (C) is modeled as a series interconnection of an equivalent capacitance (CS) and an equivalent series resistance (ESR), wherein a modeled capacitor current (i.sub.Cm) flows across the equivalent series resistance (ESR). A modeled capacitor power loss (P.sub.C), from which the capacitor temperature (T.sub.C) is determined by means of a specified temperature model, is calculated from the modeled capacitor current (i.sub.Cm,) and the value of the equivalent series resistance (ESR) by means of a first relationship of the form P.sub.C=f (i.sub.Cm, ESR). Direct measurement of the capacitor temperature (T.sub.C), of the capacitor current (i.sub.C), or of the capacitor power loss (P.sub.C) is not required. For example, a measurement of the capacitor voltage (u.sub.C) and a further calculation of the modeled capacitor current i.sub.Cm and finally of the capacitor power loss (P.sub.C) are sufficient. The method can be used for the monitoring and processing of the capacitor temperature (T.sub.C), particularly the switching-off of an element, preferably at least part of the link converter (1), when a maximum temperature, such as a preset maximum temperature, is exceeded. The method can also be used to determine the temporal progression of the capacitor temperature (T.sub.C(t)) and also to determine the remaining service life (RL) of the link capacitor (C) of a specified relationship, preferably by means of the Arrhenius formula.

A power device temperature monitor is provided. The power device temperature monitor includes a power device having a control terminal and an output terminal, where the output terminal is configured to output a current as directed by a voltage of the control terminal. The power device temperature monitor includes an inductor coupled to the output terminal of the power device and an amplifier coupled to the inductor. The power device temperature monitor includes a computing device that receives an output of the amplifier, the computing device is configured to derive a temperature of the power device based upon the output of the amplifier.