A switching amplifier includes a power device and a processing device. The power device is configured for powering a load and is comprised of a plurality of switches. The processing device configured to calculate a switch junction temperature for a bonding wire in each switch based at least in part on a power loss of each switch; generate a first accumulated fatigue damage of the bonding wire in each switch based on the switch junction temperature; and generate an estimated remaining lifetime of the switching amplifier based on the first accumulated fatigue damages of the bonding wires in each switch.

A system for determining the temperature of a voice coil of a speaker includes a first pre-emphasis filter which has an input coupled to receive a digitized current sense signal. The first pre-emphasis filter applies a gain to signal components at a selected frequency band and provides a pre-emphasized current sense signal. The system includes a second pre-emphasis filter which has an input coupled to receive a digitized voltage sense signal. The second pre-emphasis filter applies a gain to the signal components at the selected frequency band and provides a pre-emphasized voltage sense signal. The system includes a first quantizer module configured to map the pre-emphasized signal to a quantized current sense signal, and includes a second quantizer module configured to map the pre-emphasized voltage sense signal to a quantized voltage sense signal.

A method and an electronic device monitors the temperature of power electronics having at least one power transistor. In the method, during active operation of the power transistor, the drain-source voltage and the drain current of the transistor are measured and are used to calculate an on-state resistance. An instantaneous junction temperature of the power transistor is determined for monitoring the temperature on the basis of a predefined assignment. The predefined assignment is automatically recalibrated for future operation of the power transistor by automatically measuring in each case a pair of values of the instantaneous on-state resistance and an instantaneous temperature of the power electronics in each case at a plurality of different times outside active operation. These temperatures are measured at a location spatially spaced apart from the junction of the power transistor and are assumed to be junction temperatures prevailing at the respective time. The assignment is then updated according to these pairs of values.

A method of measuring a junction temperature of a SiC MOSFET can be provided by applying a gate-source voltage to an external gate loop coupled to a gate of the SiC MOSFET, detecting a first time when the gate-source voltage exceeds a first value configured to disable conduction of a current in a drain of the SiC MOSFET, detecting, after the first time, a second time when a voltage across a common source inductance in a package of the SiC MOSFET indicates that the current in the drain is greater than a reference value, defining a time interval from the first time to the second time as a turn on delay time of the SiC MOSFET and determining the junction temperature for the SiC MOSFET using the turn on delay time.

One embodiment is a method for estimating an internal temperature of a battery, the method comprising obtaining multiple terminal impedance measurements, wherein each of the terminal impedance measurements is taken at a different one of a plurality of frequencies; determining model parameters for a multivariable polynomial regression model; and applying the multivariable polynomial regression model to the multiple terminal impedance measurements to estimate the internal temperature of the battery.

A vibration generating apparatus comprises a vibration apparatus and a vibration driving circuit including a driving signal generator configured to supply a driving signal to the vibration apparatus, wherein the driving signal generator is configured to adjust a frequency-based gain compensation value based on at least one of a circuit internal temperature value of the vibration driving circuit and a temperature prediction value of the vibration apparatus corresponding to a current value of an n.sup.th driving signal, compensate for a frequency-based gain value based on the adjusted frequency-based gain compensation value, compensate for an (n+1).sup.th driving signal based on the compensated frequency-based gain value, and supply the compensated (n+1).sup.th driving signal to the vibration apparatus.

Provided is an aerosol generation device that suppresses the effect that errors in the production of structural elements have on the accuracy with which shortage of an aerosol source is detected. An aerosol generation device that comprises: a power source; a load that has a temperature-variable electrical resistance value and atomizes an aerosol source by generating heat due to supply of power from the power source; a first circuit that is used for the load to atomize the aerosol source; a second circuit that is connected in parallel to the first circuit, has a higher electrical resistance value than the first circuit, and is used to detect voltage that changes as a result of changes in the temperature of the load; an acquisition part that acquires the value of voltage that is applied to the second circuit and the load; and sensors that output the value of the voltage that changes as a result of changes in the temperature of the load.

An integrated circuit includes a memory and peripheral circuits with a temperature sensor used to automatically adjust operating voltages. The temperature sensor includes a first circuit to generate a temperature-dependent voltage (TDV) that is dependent on an operating temperature of the integrated circuit, and a second circuit to generate a plurality of temperature reference voltages, based on or more codes. One or more comparator circuits compare individual ones of the plurality of reference voltages with the TDV, to generate one or more comparison signals that are indicative of the operating temperature of the integrated circuit.

The invention relates to a method for determining the temperature of a power electronics unit (1) which has at least one commutator circuit (2) and a load (3) which is powered/can be powered by the commutator circuit (2). The commutator circuit (2) comprises a first semiconductor switch device (4), which has a first semiconductor switch (5) and optionally a first diode (6), and a second diode (9), wherein the second diode (9) and the load (3) are connected in parallel to the first semiconductor switch (5). The curve of an electric current flowing through the second diode (9) is monitored at least when a reverse current is produced in the second diode (9) after the semiconductor switch (5) has been switched so as to become conductive. On the basis of the current curve, the temperature of a barrier layer of the second diode (9) is determined. A difference between a current value of a circuit current flowing through the commutator circuit (2) and an extremal current value {Imax) produced by the reverse current is ascertained on the basis of the current curve, and the temperature of the barrier layer of the second diode (9) is determined on the basis of the difference.

Embodiments relate generally to systems and methods for determining the temperature of an object or surface near a user, such as a firefighter, in potentially dangerous conditions. A temperature sensor configured to be attached to a personal protection equipment may comprise a standoff temperature sensor element configured to detect the temperature of a nearby object or surface; a microcontroller configured to receive sensor data from the standoff temperature sensor element and determine the sensed temperature; an indicator configured to be activated by the microcontroller when the sensed temperature is higher than a predefined threshold; and an attachment element configured to attach the sensor to a personal protection equipment worn by a user.