A microfluidic device includes first and second substrate structures. The first substrate structure has a first substrate surface configured to receive one or more droplets. A plurality of electrodes configured to apply an electric field to the droplets. The second substrate structure has a second substrate surface facing the first substrate surface and spaced apart from the first substrate surface to form a fluid channel. The microfluidic device has a first heating element adjacent to the first substrate structure and disposed on an opposite side of the first substrate surface, and a second heating element adjacent to the second substrate structure and disposed on an opposite side of the second substrate surface. The microfluidic device further includes one or more temperature sensors disposed adjacent to the fluid channel between the first substrate structure and the second substrate structure.

The performance of a microelectromechanical systems (MEMS) device may be subject to unwanted thermal gradients or nonuniform temperatures. The thermal gradients may be approximated based on voltage measurements taken through bond wires coupled to bond points located on the MEMS device. Thermal gradient measurement may be improved depending on the arrangement of bond wires and/or the material of the bond wires. Sense circuitry that is coupled to the MEMS device may determine corrective actions, such as updating the operation of the MEMS device, that compensate for the adverse effects from the thermal gradients.

In a method for monitoring a winding temperature of a winding of an electric machine powered by a converter, a heating power applied to the winding of the electric machine is determined and evaluated using a thermal model. A relative increase in a resistance of the winding, when the winding heats up, is determined from the heating power in comparison with a standard reference value for 20° C. winding temperature. The winding temperature is calculated from the relative increase in the resistance, and a warning signal and/or a switch-off signal is generated when a critical winding temperature value is exceeded.

The internal temperate of a transistor is determined by detecting a voltage though a terminal of an integrated circuit that is also used by an overcurrent detection circuit of the integrated circuit for detecting an overcurrent condition of the system. The overcurrent detection circuit is coupled to a current electrode of the transistor through the terminal of the integrated circuit. A determination of internal temperature is based on a voltage measurement taken from the terminal during an on phase of the transistor. The voltage measurement is converted to a digital value and is used to determine an internal temperature of the transistor.

Methods and apparatus for determining the temperature of a pixel array. In embodiments, a first pixel in a pixel array is reverse-biased and a second pixel in the pixel array is forward-biased. A voltage for the second pixel can be measured to determine a temperature of the pixel array from the measured voltage for the second pixel.

A method for estimating a junction temperature of a power transistor used in an inverter, comprising measuring a temperature-dependent characteristic of a power semiconductor comprising the power transistor used in a power semiconductor module adapted for use in the inverter, and estimating the junction temperature of the power semiconductor using the mathematical relationship between junction temperature and the temperature-dependent characteristic of the power semiconductor. Measurement of the temperature-dependent characteristic and estimation of the junction temperature therefrom is free from using a discrete sensing element.

The application relates to direct current, DC, charging cable including two DC conductors configured for transmitting electrical energy between an electrical vehicle and a charging device, at least a signal line having a first signal line end and a second, opposite signal line end and a control device, the first signal line end is connected at a first connection point to one of the DC conductors, and the control device is configured for measuring a voltage difference between the second signal line end and a second connection point of the one of the DC conductors distant to the first connection point for determining a temperature of the DC charging cable.

The present disclosure relates to a circuitry and a method for detecting a temperature of a wireless charging coil, and a storage medium. The circuitry includes: a target resistor, a voltage supply circuit, a voltage detection circuit, and a processing component. The voltage supply circuit is configured to apply a target voltage to the series circuit. The voltage detection circuit is configured to obtain a first measured voltage across two ends of the wireless charging coil and a second measured voltage across two ends of the target resistor. The processing component is configured to: determine a working current of the series circuit based on the second measured voltage and a resistance of the target resistor; determine a real-time resistance of the wireless charging coil based on the first measured voltage and the working current; determine a real-time temperature of the wireless charging coil based on the real-time resistance.

The invention relates to a method for determining the temperature of a power electronics unit (1) which has at least one commutator circuit (2) and a load (3) which is powered/can be powered by the commutator circuit (2). The commutator circuit (2) comprises a first semiconductor switch device (4), which has a first semiconductor switch (5) and optionally a first diode (6), and a second diode (9), wherein the second diode (9) and the load (3) are connected in parallel to the first semiconductor switch (5). The curve of an electric current flowing through the second diode (9) is monitored at least when a reverse current is produced in the second diode (9) after the semiconductor switch (5) has been switched so as to become conductive. On the basis of the current curve, the temperature of a barrier layer of the second diode (9) is determined. A difference between a current value of a circuit current flowing through the commutator circuit (2) and an extremal current value {Imax) produced by the reverse current is ascertained on the basis of the current curve, and the temperature of the barrier layer of the second diode (9) is determined on the basis of the difference.

A method for determining a temperature of an Insulated-Gate Bipolar Transistor (“IGBT”) driver, the IGBT driver may include two Metal-Oxide-Semiconductor Field-Effect Transistor (“MOSFET”) elements, two direct voltage terminals for providing a base direct voltage for the two MOSFET elements, two gate terminals for providing two control voltages for the two MOSFET elements, a measurement output for outputting an output voltage, and an alternating voltage source for providing an alternating voltage, the method may include providing the control voltages, the base direct voltage, and the alternating voltage, superimposing the alternating voltage with the base direct voltage, capturing the output voltage at the measurement output of the IGBT driver, and determining the temperature of the respective MOSFET elements from the captured output voltage.