A system may include a device configured to be implanted within a recipient and that includes an integrated circuit. The integrated circuit may include a first node configured to provide a bandgap reference voltage and a second node configured to provide a CTAT voltage. The first node may be coupled to a first input of an ADC and the second node may be coupled to a second input of the ADC. The system may also include a processor communicatively coupled to an output of the ADC. The processor may be configured to determine, based on the output of the ADC, the CTAT voltage. The processor may be further configured to determine, based on the CTAT voltage, a temperature of the device.

The present invention provides a semiconductor device comprising a storage chip and a temperature detection module for detecting a temperature of the storage chip. When the temperature detected by the temperature detection module reaches a set threshold, the storage chip is activated. The present invention utilizes the temperature detection module to detect the temperature of the storage chip so as to provide a reference for the activation and operation of the storage chip, avoiding the activation and operation of the storage chip under low temperatures, shortening write time, and improving the stability of the storage chip write; the temperature detection module has a simple circuit structure and is easy for implementation, with a small occupied area, exerting no influence on the active area of the storage chip.

An on-die temperature sensor measures temperature during a temperature-measurement session. A PTAT (proportional-to-absolute-temperature) generator generates an analog PTAT voltage that is dependent on temperature. A ramp generator generates a changing, analog ramp voltage whose rate of change is dependent on the PTAT voltage, such that the rate of change of the ramp voltage is dependent on the temperature. A comparator compares the ramp voltage to a reference voltage to detect termination of the temperature-measurement session. A counter generates a count value based on the duration of the temperature-measurement session, where the count value is mapped to the measured temperature using a lookup table. The PTAT generator has (i) two npn-type bipolar devices that generate a base-to-emitter voltage difference that is dependent on temperature and function as an amplifier input stage and (ii) circuitry to generate base currents for the bipolar devices to avoid current loading at the PTAT output.

A temperature sensor is disclosed. In one aspect, the temperature sensor provides a digital output having a precise degree/code step. For example, each step in the digital output code may correspond to one degree Celsius. In one aspect, a temperature sensor comprises a precision band-gap circuit and a sigma delta modulator (SDM) analog-to-digital convertor (ADC). A bandgap voltage and a PTAT voltage may be provided from the band-gap circuit as an input to the SDM ADC. The SDM ADC may produce an output based on the difference between the PTAT voltage and the bandgap voltage. The temperature sensor may also have logic that outputs a temperature code based on the output of the SDM ADC.

A digital temperature sensor circuit is disclosed. The digital temperature sensor circuit includes a proportional to the absolute temperature (PTAT) current source, generating a PTAT current proportional to absolute temperature; a sigma-delta modulation module, including an integrator, an analog-to-digital conversion unit, and a feedback digital-to-analog conversion unit; the integrator converts the PTAT current into temperature voltage; the analog-to-digital conversion unit compares the temperature voltage with a band gap reference voltage to generate a digital modulation signal with a duty ratio proportional to the temperature; the feedback digital-to-analog conversion unit adjusts the voltage input by the analog-to-digital conversion unit and controls the charging and discharging speed of the integrator; a digital filter, quantizing the digital modulation signal into a digital signal, and outputting the digital signal.

A semiconductor integrated circuit includes a bandgap reference circuit that includes a first bandgap element, a second bandgap element, and a current mirror circuit. The bandgap reference circuit is configured to generate a temperature-dependent first voltage and a temperature-independent reference voltage. The semiconductor integrated circuit includes an analog-to-digital converter configured to convert the first voltage into an output code based on the reference voltage and output the first voltage as temperature information, and a setting control circuit configured to change at least one setting of the bandgap reference circuit based on the temperature information.

A semiconductor device includes a memory chip and a temperature detection module. The temperature detection module is configured to detect a temperature of the memory chip. The temperature detection module includes: a temperature detection unit, configured to detect the temperature of the memory chip and to output an analog signal corresponding to the temperature; and an Analog/Digital (A/D) conversion module including multiple comparison units. Each of the comparison units includes an input end, a reference end and an output end. The input end receives the analog signal output by the temperature detection unit. The output end outputs a digital signal. Reference voltages received by the reference ends of respective multiple comparison units increase non-uniformly.

A temperature sensing device and a temperature sensing method are provided. The temperature sensing device includes a sensor and an analog-to-digital converter. The sensor generates a first sensing result corresponding to an ambient temperature based on a first condition and generates a second sensing result corresponding to the ambient temperature based on a second condition. The second sensing result is different from the first sensing result. The analog-to-digital divides the first sensing result and the second sensing result to obtain a quotient value and generates an output digital code value corresponding to the ambient temperature according to the quotient value.

A circuit for analog-digital conversion, which includes a first connection and a second connection and a third connection and a fourth connection for connecting a sensor, an analog-digital converter (ADC), whose first input is connected to the first connection and whose second input is connected to the second connection, a first current source circuit for outputting a first output current, a first switching device for the switchable connection of the first current source circuit to the first connection or to the third connection, a current source/sink circuit for outputting a second output current, a second switching device for the switchable connection of the current source/sink circuit to a reference potential or to the second connection, and a third switching device for the switchable connection of the reference potential to the second connection or to the fourth connection.

Methods and devices are provided for circuits. One device includes an adjustment circuit having an adjustable resistor for modifying a resistance value of a resistive device, the adjustment circuit connected to an adjustment terminal of the resistive device. The resistance value of the adjustable resistor changes, when a voltage or charge on the adjustment terminal of the adjustable resistor is changed. The adjustable resistor is a phase change element with an adjusting terminal to which different voltage values are applied for adjusting a conversion device threshold value.