A calibrated load cell includes a monolithic load beam having a first region, a second region on a distal end of the load beam from the first region for receiving a force from a load, and a third region arranged between the first and second regions, wherein the third region comprises a recess on one side of the load beam. A strain gauge is arranged in the recess for detecting a deformation of the third region from the load and for generating a strain gauge output signal proportional to the deformation of the third region. The load cell also includes a microcontroller arranged in the recess for receiving and processing the strain gauge output signal to produce a load cell output signal that represents the load on a load cell output cable. The microcontroller transforms the strain gauge output signal based on calibration parameters to produce the load cell output signal as a calibrated load cell output signal.

A method of controlling a force sensor system to define at least one button implemented by at least one force sensor, the method comprising: receiving a force sensor input; determining a gradient of the force sensor input; and controlling the force sensor system based on the determined gradient.

A method of controlling a force sensor system to define at least one button implemented by at least one force sensor, the method comprising: receiving a force sensor input; determining a gradient of the force sensor input; and controlling the force sensor system based on the determined gradient.

The invention relates to a method for monitoring the function of a capacitive pressure measurement cell (10) which has a measuring capacitor (C.sub.M) and a reference capacitor (C.sub.R), to which an internal excitation voltage U.sub.E0 in the form of an alternating square-wave signal is applied. According to the invention, in order to allow the detection of a disturbing influence on the measurement result owing to, in particular, moisture-induced leakage currents, it is proposed that the corresponding voltage values U.sub.1, U.sub.2 be sensed from the voltage signal U.sub.COM during the falling and/or rising signal curve at least two defined times t.sub.1, t.sub.2, and the two pairs of values t.sub.1; U.sub.1 and t.sub.2; U.sub.2 are used to determine a linear equation U=f(t), wherein the linear equation U=f(t)

within the falling or rising signal curve is used to calculate the time t.sub.x at which the voltage value U.sub.x set as a threshold value or switchover point in the comparator-oscillator (SG) is reached, wherein—either the time t.sub.x is compared with the actual switchover time of the comparator-oscillator (SG) and an error signal is generated in the event of significant deviation,—or the time t.sub.x is used to define a hypothetical switchover point of the comparator-oscillator (SG), from which a hypothetical working frequency is calculated, and an error signal is generated if there is significant deviation of said hypothetical working frequency from the actual working frequency of the comparator-oscillator (SG).

A force sensor comprising a beam having a longitudinal center axis and a neutral axis that extends along a beam surface parallel to the center axis. A first half-bridge includes tension resistors. A second half-bridge includes tension resistors. A third half-bridge includes compression resistors. A fourth half-bridge includes compression resistors. The half-bridges are arranged on the beam surface such that redundant measurements of orthogonal components of a force imparted to the beam can be made using four different combinations of three of the half-bridges. The redundant measurements can be used to identify a malfunction of one or more of the resistors.

A module, including at least one first component in the form of a semiconductor component including multiple stress measuring cells situated in a distributed manner for detecting stress measured values at different measuring positions of the semiconductor component, at least one second component which is mechanically coupled to the semiconductor component, and an evaluation unit, which is designed to ascertain at least one location-dependent stress distribution in the semiconductor component based on the stress measured values detected at one measuring point in time, and to ascertain a deformation state of the at least one second component at the measuring point in time on the basis of the at least one ascertained location-dependent stress distribution in the semiconductor component. A corresponding method for monitoring environmental influences on a module is also described.

A module, including at least one first component in the form of a semiconductor component including multiple stress measuring cells situated in a distributed manner for detecting stress measured values at different measuring positions of the semiconductor component, at least one second component which is mechanically coupled to the semiconductor component, and an evaluation unit, which is designed to ascertain at least one location-dependent stress distribution in the semiconductor component based on the stress measured values detected at one measuring point in time, and to ascertain a deformation state of the at least one second component at the measuring point in time on the basis of the at least one ascertained location-dependent stress distribution in the semiconductor component. A corresponding method for monitoring environmental influences on a module is also described.

A method for stress-induced magnetic field signal acquisition and stress measurement is disclosed. The method can include the following steps: a1, conducting AC magnetization on a to-be-tested structure by using an AC magnetic field with preset frequencies and strengths, and acquiring the excitation magnetic field signals in at least one cycle; a2, subtracting the excitation magnetic field signals in at least one cycle of a stress-free sample having the same material as the to-be-tested structure from the excitation magnetic field signals acquired in step a1 to obtain a stress-induced magnetic field signals of the to-be-tested structure; a3, quantitatively assessing the stresses in the to-be-tested structure by comparing the mean values of the stress-induced magnetic field signals acquired in step a2 with the pre-calibrated relationship of stresses and the mean values of the stress-induced magnetic field signals for the material of the to-be-tested structure.

A method for stress-induced magnetic field signal acquisition and stress measurement is disclosed. The method can include the following steps: a1, conducting AC magnetization on a to-be-tested structure by using an AC magnetic field with preset frequencies and strengths, and acquiring the excitation magnetic field signals in at least one cycle; a2, subtracting the excitation magnetic field signals in at least one cycle of a stress-free sample having the same material as the to-be-tested structure from the excitation magnetic field signals acquired in step a1 to obtain a stress-induced magnetic field signals of the to-be-tested structure; a3, quantitatively assessing the stresses in the to-be-tested structure by comparing the mean values of the stress-induced magnetic field signals acquired in step a2 with the pre-calibrated relationship of stresses and the mean values of the stress-induced magnetic field signals for the material of the to-be-tested structure.

A surgical robotic system includes a plurality of magneto sensors for measuring a torque, axial force, angle, position, or speed of various driven members in the surgical robotic system.