G01Q40/00

METHOD AND APPARATUS FOR SCANNING A SAMPLE WITH A PROBE

A method of measuring a sample with a probe including a cantilever mount, a cantilever extending from the cantilever mount to a free end, and a probe tip carried by the free end of the cantilever is disclosed. The method includes taking a series of measurements of a sidewall of the sample with the probe; and analysing the series of measurements to determine a characteristic of the sidewall. The measurements are taken during a measurement cycle that includes a pair of measurement drive phases. The measurement drive phases include first and second drive phases in which the probe is driven, respectively, down, then up, next to the sidewall. During one of the drive phases the probe tip interacts with the sidewall, and the series of measurements are taken by measuring an angle of the cantilever as the probe tip interacts with the sidewall during the one of the drive phases.

METHOD AND APPARATUS FOR SCANNING A SAMPLE WITH A PROBE

A method of measuring a sample with a probe including a cantilever mount, a cantilever extending from the cantilever mount to a free end, and a probe tip carried by the free end of the cantilever is disclosed. The method includes taking a series of measurements of a sidewall of the sample with the probe; and analysing the series of measurements to determine a characteristic of the sidewall. The measurements are taken during a measurement cycle that includes a pair of measurement drive phases. The measurement drive phases include first and second drive phases in which the probe is driven, respectively, down, then up, next to the sidewall. During one of the drive phases the probe tip interacts with the sidewall, and the series of measurements are taken by measuring an angle of the cantilever as the probe tip interacts with the sidewall during the one of the drive phases.

AM/FM measurements using multiple frequency of atomic force microscopy

Apparatus and techniques presented combine the features and benefits of amplitude modulated (AM) atomic force microscopy (AFM), sometimes called AC mode AFM, with frequency modulated (FM) AFM. In AM-FM imaging, the topographic feedback from the first resonant drive frequency operates in AM mode while the phase feedback from second resonant drive frequency operates in FM mode. In particular the first or second frequency may be used to measure the loss tangent, a dimensionless parameter which measures the ratio of energy dissipated to energy stored in a cycle of deformation.

AM/FM measurements using multiple frequency of atomic force microscopy

Apparatus and techniques presented combine the features and benefits of amplitude modulated (AM) atomic force microscopy (AFM), sometimes called AC mode AFM, with frequency modulated (FM) AFM. In AM-FM imaging, the topographic feedback from the first resonant drive frequency operates in AM mode while the phase feedback from second resonant drive frequency operates in FM mode. In particular the first or second frequency may be used to measure the loss tangent, a dimensionless parameter which measures the ratio of energy dissipated to energy stored in a cycle of deformation.

Thermal Measurements Using Multiple Frequency Atomic Force Microscopy
20170313583 · 2017-11-02 ·

Apparatus and techniques for extracting information carried in higher eigenmodes or harmonics of an oscillating cantilever or other oscillating sensors in atomic force microscopy and related MEMs work are described. Similar apparatus and techniques for extracting information from piezoelectric, polymer and other materials using contact resonance with multiple excitation signals are also described.

Thermal Measurements Using Multiple Frequency Atomic Force Microscopy
20170313583 · 2017-11-02 ·

Apparatus and techniques for extracting information carried in higher eigenmodes or harmonics of an oscillating cantilever or other oscillating sensors in atomic force microscopy and related MEMs work are described. Similar apparatus and techniques for extracting information from piezoelectric, polymer and other materials using contact resonance with multiple excitation signals are also described.

DEVICE AND METHOD FOR CHARACTERIZING A SAMPLE USING LOCALIZED MEASUREMENTS
20170310871 · 2017-10-26 ·

A device for characterizing a sample includes a measuring instrument for determining a physical characteristic of the sample, and a positioning system for positioning the measuring instrument in relation to the sample. The positioning system includes a localization target, a unit for acquiring and analysing images, and image analysis unit suitable for analysing the image of the portion of the localization target to determine the position and orientation of the optical imaging system in relation to the localization target and a processing unit processing results of image analysis and calibration, suitable for determining an absolute position of the localized measurement point in a referential system linked to the sample, the measuring instrument being positioned to take the measurement at said localized measurement point and the physical characteristic of the sample being determined by the measuring instrument at the localized measurement point.

DEVICE AND METHOD FOR CHARACTERIZING A SAMPLE USING LOCALIZED MEASUREMENTS
20170310871 · 2017-10-26 ·

A device for characterizing a sample includes a measuring instrument for determining a physical characteristic of the sample, and a positioning system for positioning the measuring instrument in relation to the sample. The positioning system includes a localization target, a unit for acquiring and analysing images, and image analysis unit suitable for analysing the image of the portion of the localization target to determine the position and orientation of the optical imaging system in relation to the localization target and a processing unit processing results of image analysis and calibration, suitable for determining an absolute position of the localized measurement point in a referential system linked to the sample, the measuring instrument being positioned to take the measurement at said localized measurement point and the physical characteristic of the sample being determined by the measuring instrument at the localized measurement point.

Pattern dimension measurement method using electron microscope, pattern dimension measurement system, and method for monitoring changes in electron microscope equipment over time

Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.

Pattern dimension measurement method using electron microscope, pattern dimension measurement system, and method for monitoring changes in electron microscope equipment over time

Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.