Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.

Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.

Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.

Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.

Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.

A scanning probe microscope based on high-speed instantaneous force control is used scan a sample, which includes steps of acquiring an acting force signal between a probe unit and a sample; calculating a real amplitude signal according to the acting force signal; acquiring a set amplitude signal; acquiring the first sinusoidal signal; obtaining a target acting force signal according to the real amplitude signal, the set amplitude signal and the first sinusoidal signal; and scanning the surface of the sample in a target sample scanning mode according to the target acting force signal, wherein the target sample scanning mode represents the operating mode of scanning the surface of the sample under the indication of the target acting force signal. The method solves the problems of low peak force tapping frequency and limited scanning range, and realizes high-speed instantaneous force tapping and mechanical property measurement while ensuring the scanning range.

A method is presented for locating charge traps in a crystal lattice. The method includes: arranging a local probe having an inversion-symmetric lattice defect, wherein energy levels of the lattice defect are non-linearly Stark-shiftable by means of charge traps in the crystal lattice; determining Stark-shifted photoluminescence emission spectra, wherein each of the photoluminescence emission spectra is determined in a respective scanning operation by means of photoluminescence excitation in the crystal lattice; determining an integrated spectrum by integrating the photoluminescence emission spectra; determining jump probabilities from consecutive ones of the photoluminescence emission spectra and determining a charge trap configuration from the jump probabilities; determining simulated spectra by means of Monte Carlo simulation based on the determined charge trap configuration and a resulting Stark shift; and determining an optimal spatial arrangement of the charge traps neighboring the local probe by comparing the integrated spectrum with the simulated spectra.

A method is presented for locating charge traps in a crystal lattice. The method includes: arranging a local probe having an inversion-symmetric lattice defect, wherein energy levels of the lattice defect are non-linearly Stark-shiftable by means of charge traps in the crystal lattice; determining Stark-shifted photoluminescence emission spectra, wherein each of the photoluminescence emission spectra is determined in a respective scanning operation by means of photoluminescence excitation in the crystal lattice; determining an integrated spectrum by integrating the photoluminescence emission spectra; determining jump probabilities from consecutive ones of the photoluminescence emission spectra and determining a charge trap configuration from the jump probabilities; determining simulated spectra by means of Monte Carlo simulation based on the determined charge trap configuration and a resulting Stark shift; and determining an optimal spatial arrangement of the charge traps neighboring the local probe by comparing the integrated spectrum with the simulated spectra.

The invention describes a scanning probe imaging system with the probe held at a small distance from a sample (7) surface of the part during raster-scanning image acquisition. The interaction between the sample (7) and the probe's cantilever arm (17) is achieved due to microwave near fields formed at the sharp probe tip (18). Due to the near fields, the electrical impedance of the probe depends on the distance between the probe and the sample (7) and on the sample electrical properties, both in the immediate vicinity of the probe tip (18). The microwave detection system senses the electrical impedance of the probe at a set microwave frequency. The probe-sample distance is set and controlled with the use of an optical chromatic confocal displacement sensor as well as with the signals of the microwave detection system.

The invention describes a scanning probe imaging system with the probe held at a small distance from a sample (7) surface of the part during raster-scanning image acquisition. The interaction between the sample (7) and the probe's cantilever arm (17) is achieved due to microwave near fields formed at the sharp probe tip (18). Due to the near fields, the electrical impedance of the probe depends on the distance between the probe and the sample (7) and on the sample electrical properties, both in the immediate vicinity of the probe tip (18). The microwave detection system senses the electrical impedance of the probe at a set microwave frequency. The probe-sample distance is set and controlled with the use of an optical chromatic confocal displacement sensor as well as with the signals of the microwave detection system.