A method for assessing the quality of a tip of a scanning probe microscope (SPM) includes recording an SPM image, extracting a plurality of images of dangling bonds from the SPM image, feeding the extracted images of dangling bonds into a convolution neural network one image at a time, analyzing each of the plurality of images of dangling bonds using the convolution neural network, assigning each of the plurality of images of dangling bonds one of a sharp tip status or a double tip status, and determining whether the number of the plurality of images of dangling bonds of the SPM image assigned the double tip status exceeds a predetermined threshold. A method of automatically conditioning a tip of a scanning probe microscope (SPM) during imaging of a sample and a method of mass-producing atomistic quantum dots, qubits, or particular atom orbital occupation are also provided.

A method for assessing the quality of a tip of a scanning probe microscope (SPM) includes recording an SPM image, extracting a plurality of images of dangling bonds from the SPM image, feeding the extracted images of dangling bonds into a convolution neural network one image at a time, analyzing each of the plurality of images of dangling bonds using the convolution neural network, assigning each of the plurality of images of dangling bonds one of a sharp tip status or a double tip status, and determining whether the number of the plurality of images of dangling bonds of the SPM image assigned the double tip status exceeds a predetermined threshold. A method of automatically conditioning a tip of a scanning probe microscope (SPM) during imaging of a sample and a method of mass-producing atomistic quantum dots, qubits, or particular atom orbital occupation are also provided.

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

A method for assessing the quality of a tip of a scanning probe microscope (SPM) includes recording an SPM image, extracting a plurality of images of dangling bonds from the SPM image, feeding the extracted images of dangling bonds into a convolution neural network one image at a time, analyzing each of the plurality of images of dangling bonds using the convolution neural network, assigning each of the plurality of images of dangling bonds one of a sharp tip status or a double tip status, and determining whether the number of the plurality of images of dangling bonds of the SPM image assigned the double tip status exceeds a predetermined threshold. A method of automatically conditioning a tip of a scanning probe microscope (SPM) during imaging of a sample and a method of mass-producing atomistic quantum dots, qubits, or particular atom orbital occupation are also provided.

A method for assessing the quality of a tip of a scanning probe microscope (SPM) includes recording an SPM image, extracting a plurality of images of dangling bonds from the SPM image, feeding the extracted images of dangling bonds into a convolution neural network one image at a time, analyzing each of the plurality of images of dangling bonds using the convolution neural network, assigning each of the plurality of images of dangling bonds one of a sharp tip status or a double tip status, and determining whether the number of the plurality of images of dangling bonds of the SPM image assigned the double tip status exceeds a predetermined threshold. A method of automatically conditioning a tip of a scanning probe microscope (SPM) during imaging of a sample and a method of mass-producing atomistic quantum dots, qubits, or particular atom orbital occupation are also provided.

Systems and methods for mechanosynthesis are disclosed, including those that avoid the need for a bootstrap process, avoid the need to build tips via mechanosynthesis, avoid the need for charging tips with feedstock during a build sequence, avoid the need to dispose of reaction byproducts, which reduce the design complexity of new tips, and/or which reduce or avoid the need for multiple positional means and/or tip switching.

The present disclosure is directed to a methodology for embedding a deterministic number of dopant atoms in a surface portion of a group IV semiconductor lattice. The methodology comprises the steps of: forming one or more lithographic sites on the surface portion; dosing, at a temperature below 100 K, the surface portion using a gas with molecules comprising the dopant atom and hydrogen atoms in a manner such that, a portion of the molecules bonds to the surface portion; and incorporating one or more dopant atoms in a respective lithographic site by transferring an amount of energy to the dopant atoms. The number of dopant atoms incorporated in a lithographic site is deterministic and related to the size of the lithographic site.

A method for tuning the conductance of a molecular network includes a network of covalently bound molecular units, which are molecular entities assembled so as to form a network that can typically be compared to a finite, imperfect 2D crystal. Each of the molecular entities includes: a branching junction; M branches (M≥3) branching from said branching junction, where each of the M branches comprises an aliphatic group; and M linkers, each terminating a respective one of the M branches. Each of the M linkers is covalently bound to a linker of another molecular entity of the network. The method involves tuning the electrical conductance of molecular entities of a subset of the molecular entities of the network, in one or several (e.g., parallel or successive) steps.

A method for tuning the conductance of a molecular network includes a network of covalently bound molecular units, which are molecular entities assembled so as to form a network that can typically be compared to a finite, imperfect 2D crystal. Each of the molecular entities includes: a branching junction; M branches (M≥3) branching from said branching junction, where each of the M branches comprises an aliphatic group; and M linkers, each terminating a respective one of the M branches. Each of the M linkers is covalently bound to a linker of another molecular entity of the network. The method involves tuning the electrical conductance of molecular entities of a subset of the molecular entities of the network, in one or several (e.g., parallel or successive) steps.

A debris collection and metrology system for collecting and analyzing debris from a tip used in nanomachining processes, the system including an irradiation source, an irradiation detector, an actuator, and a controller. The irradiation source is operable to direct incident irradiation onto the tip, and the irradiation detector is operable to receive a sample irradiation from the tip, the sample irradiation being generated as a result of the direct incident irradiation being applied onto the tip. The controller is operatively coupled to an actuator system and the irradiation detector, and the controller is operable to receive a first signal based on a first response of the irradiation detector to the sample irradiation, and the controller is operable to effect relative motion between the tip and at least one of the irradiation source and the irradiation detector based on the first signal.