The invention provides a semiconductor test key structure, which comprises a substrate, a plurality of gate structures located on the substrate, a plurality of thin film resistor layers, wherein each thin film resistor layer is located above one of the gate structures, and the thin film resistor layers are located in a dielectric layer, a test key circuit layer is located on the dielectric layer, wherein the test key circuit layer is a square wave pattern from a top view, and two contact pads are respectively connected with the test key circuit layer.

The invention provides a semiconductor test key structure, which comprises a substrate, a plurality of gate structures located on the substrate, a plurality of thin film resistor layers, wherein each thin film resistor layer is located above one of the gate structures, and the thin film resistor layers are located in a dielectric layer, a test key circuit layer is located on the dielectric layer, wherein the test key circuit layer is a square wave pattern from a top view, and two contact pads are respectively connected with the test key circuit layer.

According to the various aspects, a testing probe may include an electrically conductive pad disposed on a substrate with an electrically conductive elastomer head disposed on the electrically conductive pad and a metal layer disposed on the electrically conductive elastomer head. In an aspect, a plurality of the testing probes are disposed on the substrate to form a probe head interposer.

According to the various aspects, a testing probe may include an electrically conductive pad disposed on a substrate with an electrically conductive elastomer head disposed on the electrically conductive pad and a metal layer disposed on the electrically conductive elastomer head. In an aspect, a plurality of the testing probes are disposed on the substrate to form a probe head interposer.

Proposed are an electrically conductive contact pin formed by stacking a plurality of metal layers and a manufacturing method therefor, in which unintentional deformation of the electrically conductive contact pin is prevented by concentrating a pressing force pressing the electrically conductive contact pin on a tip portion having a relatively small cross-sectional area.

Proposed are an electrically conductive contact pin formed by stacking a plurality of metal layers and a manufacturing method therefor, in which unintentional deformation of the electrically conductive contact pin is prevented by concentrating a pressing force pressing the electrically conductive contact pin on a tip portion having a relatively small cross-sectional area.

The present disclosure relates to a probe processing apparatus and a method for processing probes. The probe processing apparatus includes a probe seat, a pushing element, and a stopping element, wherein the pushing element and the stopping element are positioned at different heights. The probe seat includes an opening configured to secure a probe. The pushing element is disposed on a first bracket positioned on one side of the probe seat, while the stopping element is disposed on a second bracket positioned on the opposite side of the probe seat. During the processing procedure, one end of the pushing element contacts the probe and applies pressure, causing the probe to bend towards the stopping element.

The present disclosure relates to a probe processing apparatus and a method for processing probes. The probe processing apparatus includes a probe seat, a pushing element, and a stopping element, wherein the pushing element and the stopping element are positioned at different heights. The probe seat includes an opening configured to secure a probe. The pushing element is disposed on a first bracket positioned on one side of the probe seat, while the stopping element is disposed on a second bracket positioned on the opposite side of the probe seat. During the processing procedure, one end of the pushing element contacts the probe and applies pressure, causing the probe to bend towards the stopping element.

An interface probe card includes a planar dielectric substrate of a cryogenic-compatible material having a first major surface and an opposite second major surface. Disposed on the first major surface is a plurality of high-speed conductive traces. A plurality of inner contact pads, also on the first major surface, are electrically connected to the conductive traces and arranged in a geometric pattern that defines an interior region. A plurality of metallic bumps protrude from the inner contact pads. Located within the interior region defined by the geometric pattern is an aperture that extends entirely through the planar dielectric substrate from the first major surface to the second major surface, providing an unobstructed line-of-sight path.

An interface probe card includes a planar dielectric substrate of a cryogenic-compatible material having a first major surface and an opposite second major surface. Disposed on the first major surface is a plurality of high-speed conductive traces. A plurality of inner contact pads, also on the first major surface, are electrically connected to the conductive traces and arranged in a geometric pattern that defines an interior region. A plurality of metallic bumps protrude from the inner contact pads. Located within the interior region defined by the geometric pattern is an aperture that extends entirely through the planar dielectric substrate from the first major surface to the second major surface, providing an unobstructed line-of-sight path.