The invention relates to a clad wire (1) for producing test needles or sliding contacts having a wire core (2) made of rhodium or a rhodium-based alloy, an inner cladding (3) made of copper or silver or aluminum or a copper-based alloy or a silver-based alloy or an aluminum-based alloy, wherein the inner cladding (3) covers or completely encloses the wire core (2) on at least two opposite sides, an adhesion-promoting layer (5) made of gold or a gold-based alloy, which is arranged between the wire core (2) and the inner cladding (3), and an outer cladding (4) made of a metal or a metal alloy having a greater hardness than the material of the inner cladding (3), wherein the outer cladding (4) encloses the inner cladding (3). The invention also relates to a method for producing a clad wire and to a test needle having at least one clad wire (1) or produced from a clad wire (1) and a test needle array having a plurality of test needles spaced apart from one another and a sliding contact having a plurality of clad wires (1) or produced from a clad wire (1).

A probe chip device and a method for fabricating a probe chip device with an integrated diode sensor are disclosed. In one example, a probe chip device includes a beam head element that includes at least one probe tip that is configured to electrically probe a device under test. The probe chip device further includes a diode sensor that is heterogeneously integrated on the beam head element and is proximally positioned to the at least one probe tip.

A probe chip device and a method for fabricating a probe chip device with an integrated diode sensor are disclosed. In one example, a probe chip device includes a beam head element that includes at least one probe tip that is configured to electrically probe a device under test. The probe chip device further includes a diode sensor that is heterogeneously integrated on the beam head element and is proximally positioned to the at least one probe tip.

In one embodiment, the present invention includes an interface assembly for a vertical probe contactor. The interface assembly comprises a base board, a mounting board, a depth adjust plate, and an interface apparatus. The depth adjust plate is between the base board and the mounting board, and the interface apparatus is mounted to the mounting board. The interface apparatus is configured to receive the vertical probe contactor through an opening in the base board and a corresponding opening in the depth adjust plate. A thickness of the depth adjust plate defines a vertical distance between a wafer side of the base board and a plurality of probe tips of the vertical probe contactor.

In one embodiment, the present invention includes an interface assembly for a vertical probe contactor. The interface assembly comprises a base board, a mounting board, a depth adjust plate, and an interface apparatus. The depth adjust plate is between the base board and the mounting board, and the interface apparatus is mounted to the mounting board. The interface apparatus is configured to receive the vertical probe contactor through an opening in the base board and a corresponding opening in the depth adjust plate. A thickness of the depth adjust plate defines a vertical distance between a wafer side of the base board and a plurality of probe tips of the vertical probe contactor.

A device probe includes a primary probe arm and a subsequent probe arm with a slip plane spacing between the primary probe arm and subsequent probe arm. Each probe arm is integrally part of a probe base that is attachable to a probe card. During probe use on a semiconductive device or a semiconductor device package substrate, overtravel of the probe tip allows the primary and subsequent probe arms to deflect, while sufficient resistance to deflection creates a useful contact with an electrical structure such as an electrical bump or a bond pad.

A device probe includes a primary probe arm and a subsequent probe arm with a slip plane spacing between the primary probe arm and subsequent probe arm. Each probe arm is integrally part of a probe base that is attachable to a probe card. During probe use on a semiconductive device or a semiconductor device package substrate, overtravel of the probe tip allows the primary and subsequent probe arms to deflect, while sufficient resistance to deflection creates a useful contact with an electrical structure such as an electrical bump or a bond pad.

A testing apparatus according to an embodiment includes a chamber, a probe card including probes exposed in the chamber, a stage supporting a test target object in the chamber, a moving mechanism to move the stage between a testing position where the test target object is in contact with the probes and a cleaning position where the test target object is arranged away from the probes in a horizontal direction, and an air tube introducing first dry air into the chamber through the probe card when the stage is placed at the cleaning position.

A method for cleaning and coating a tip of a test probe in an integrated circuit package test system is provided. The method includes 1) saturating a brush tip comprising nonporous bristles with a solution of phosphonic acid; 2) applying the solution of phosphonic acid to the tip of the test probe with the brush tip to coat the tip of the test probe with the solution of phosphonic acid; and 3) allowing the solution of phosphonic acid to dry on the tip of the test probe and form a self-assembled monolayer of phosphonates thereon.

A method for cleaning and coating a tip of a test probe in an integrated circuit package test system is provided. The method includes 1) saturating a brush tip comprising nonporous bristles with a solution of phosphonic acid; 2) applying the solution of phosphonic acid to the tip of the test probe with the brush tip to coat the tip of the test probe with the solution of phosphonic acid; and 3) allowing the solution of phosphonic acid to dry on the tip of the test probe and form a self-assembled monolayer of phosphonates thereon.