G01R3/00

Wafer probe with elastomer support

A wafer test device includes a test interconnect to interface with a microcircuit of the wafer at a first side and an interposer to interface with the test interconnect at a second side of the test interconnect, opposite the first side. The interposer connects the test interconnect, via a printed circuit board (PCB), to a test apparatus that determines and controls test patterns that are applied to the microcircuit via the test interconnect. A support structure supports the test interconnect and the interposer. The support structure includes an inner bearing to tilt the test interconnect to match a tilt of a surface of the microcircuit. An elastomer between the test interconnect and the interposer reduces deflection of the test interconnect during a process of connecting the test interconnect to the microcircuit.

Managing grid interaction with interconnect socket adapter configured for an energy storage device

A system for managing grid interaction with an energy storage device includes an energy exchange server, a plurality of energy storage devices, a plurality of interconnect socket adapters, and a plurality of energy exchange controllers, each energy exchange controller coupling to one of the plurality of interconnect socket adapters and dictating energy consumption based on energy pricing data received from the energy exchange server. Each interconnect socket adapter electrically couples to the power grid, one or more energy sinks, and an energy storage device, and the energy exchange server receives a real-time energy consumption data set, a real-time energy production data set, a set of environmental parameters and a starting energy price, and generates a current aggregate electricity demand value as a function of the real-time energy consumption data set and the environmental parameters, a current aggregate electricity supply value as a function of the real-time energy production dataset and the environmental parameters, and a current energy price as a function of the starting energy price, the current aggregate electricity demand value, and the current aggregate electricity supply value.

Managing grid interaction with interconnect socket adapter configured for an energy storage device

A system for managing grid interaction with an energy storage device includes an energy exchange server, a plurality of energy storage devices, a plurality of interconnect socket adapters, and a plurality of energy exchange controllers, each energy exchange controller coupling to one of the plurality of interconnect socket adapters and dictating energy consumption based on energy pricing data received from the energy exchange server. Each interconnect socket adapter electrically couples to the power grid, one or more energy sinks, and an energy storage device, and the energy exchange server receives a real-time energy consumption data set, a real-time energy production data set, a set of environmental parameters and a starting energy price, and generates a current aggregate electricity demand value as a function of the real-time energy consumption data set and the environmental parameters, a current aggregate electricity supply value as a function of the real-time energy production dataset and the environmental parameters, and a current energy price as a function of the starting energy price, the current aggregate electricity demand value, and the current aggregate electricity supply value.

Integrated circuit contact test apparatus with and method of construction

A test socket for a device under test (DUT) is disclosed in several embodiments. One embodiment shows a test socket base (16) with apertures (30) for insertion of test pin insert blocks (28). The blocks are inserted top—in or bottom—in and are provided with registration bosses 80 and teeth 92 or other means for maintaining registration. Blocks are provided with dielectric constants to achieve different frequency response relative to other pins. To achieve great EMI and cross talk isolation, the socket may be made of aluminum with hard anodize coating to insulate test pins (32) from the housing.

Integrated circuit contact test apparatus with and method of construction

A test socket for a device under test (DUT) is disclosed in several embodiments. One embodiment shows a test socket base (16) with apertures (30) for insertion of test pin insert blocks (28). The blocks are inserted top—in or bottom—in and are provided with registration bosses 80 and teeth 92 or other means for maintaining registration. Blocks are provided with dielectric constants to achieve different frequency response relative to other pins. To achieve great EMI and cross talk isolation, the socket may be made of aluminum with hard anodize coating to insulate test pins (32) from the housing.

Test socket and method of manufacturing the same

A first base plate includes a plurality of first positioning hole portions, an accommodation portion that accommodates an optical module, a first opening portion, a first pressing portion, and a first engagement portion. A second base plate has a second positioning hole portion that is disposed at a position corresponding to the first positioning hole portion, a second opening portion that is disposed at a predetermined positional relationship with respect to the second positioning hole portion, a second holding portion, a conduction portion, a second pressing portion, a substrate portion, a cover portion, a second hinge portion, and a second engagement portion.

INKJET PRINTING DEDICATED TEST PINS
20220320016 · 2022-10-06 ·

In an aspect, an apparatus includes a package. The package includes a substrate, a plurality of components located on a top surface of the substrate, a plurality of ball pads located on a bottom surface of the substrate, a plurality of balls, and a plurality of test pads located on the bottom surface of the substrate. Individual balls of the plurality of balls are attached to individual ball pads of the plurality of ball pads.

Testing apparatus for singulated semiconductor dies with sliding layer
11651980 · 2023-05-16 · ·

The testing apparatus for singulated semiconductor dies comprises a nesting frame and a bottom part, which form a testing device nest adapted to the size of a semiconductor die. A pushing device is provided for an alignment of the semiconductor die in the testing device nest. An engineering plastic layer on the bottom part forms a surface on which the semiconductor die slides during its alignment.

Method of manufacturing an integrated circuit involving performing an electrostatic discharge test and electrostatic discharge test system performing the same

In a method of manufacturing an integrated circuit involving performing an electrostatic discharge (ESD) test, a weak frequency band is detected by sequentially radiating a plurality of first electromagnetic waves on a first test board including the integrated circuit. First peak-to-peak voltage signals are detected by sequentially radiating the plurality of first electromagnetic waves on a second test board including an electromagnetic wave receiving module. A frequency spectrum is detected by radiating a second electromagnetic wave on a housing including a third test board including the electromagnetic wave receiving module. A second peak-to-peak voltage signal is generated based on the weak frequency band, the first peak-to-peak voltage signals and the frequency spectrum. An ESD characteristic associated with an electronic system including the integrated circuit is predicted based on the second peak-to-peak voltage signal.

Method of manufacturing an integrated circuit involving performing an electrostatic discharge test and electrostatic discharge test system performing the same

In a method of manufacturing an integrated circuit involving performing an electrostatic discharge (ESD) test, a weak frequency band is detected by sequentially radiating a plurality of first electromagnetic waves on a first test board including the integrated circuit. First peak-to-peak voltage signals are detected by sequentially radiating the plurality of first electromagnetic waves on a second test board including an electromagnetic wave receiving module. A frequency spectrum is detected by radiating a second electromagnetic wave on a housing including a third test board including the electromagnetic wave receiving module. A second peak-to-peak voltage signal is generated based on the weak frequency band, the first peak-to-peak voltage signals and the frequency spectrum. An ESD characteristic associated with an electronic system including the integrated circuit is predicted based on the second peak-to-peak voltage signal.