A method and system for resistivity imaging. A method may comprise disposing a downhole tool into a borehole, applying a voltage difference between the array of injector electrodes, constructing a first set of formation images for each of the plurality of frequencies, applying a mud effect removal algorithm to produce a second set of formation images for each of the plurality of frequencies, applying a dielectric correction algorithm to each of the plurality of frequencies to produce a third set of formation images for each of the plurality of frequencies, and combining the first set of formation images, the second set of formation images, and the third set of formation images to obtain a blended image. A system for resistivity imaging may comprise a downhole tool. The downhole tool may comprises a pad, an array of injector electrodes, and one or more return electrodes.

Hundreds of thousands of concrete bridges, buildings etc. and hundreds of billions of tons of concrete require characterization throughout the process from manufacture to pouring and curing and on throughout service life. The characterization may relate to initial concrete properties, projected concrete properties, framework removal, corrosion, failure etc. Accordingly, a variety of measurements such as water content, electrical resistivity, and half-cell corrosion potential for example would be beneficially implemented as easy to use field test equipment or embedded sensors allowing lifetime monitoring to be performed rather than discrete assessments when issues become evident.

A verification device for verifying an electrical overvoltage between two electrical conductors includes a conductor-track carrier made of an electrically insulating carrier material, a plurality of conductor tracks applied in spaced-apart relation from one another on the conductor-track carrier, and a measuring device acquiring an electrical resistance of one of the conductor tracks. Each of the two electrical conductors is electrically connected to at least one of the conductor tracks with the proviso that none of the conductor tracks is electrically connected to both of the two electrical conductors. The conductor tracks are configured such that a prespecified overvoltage between the two electrical conductors causes a partial discharge that changes the electrical resistance of the one conductor track between the one conductor track and another one of the conductor tracks that is electrically connected to one of the two electrical conductors.

A verification device for verifying an electrical overvoltage between two electrical conductors includes a conductor-track carrier made of an electrically insulating carrier material, a plurality of conductor tracks applied in spaced-apart relation from one another on the conductor-track carrier, and a measuring device acquiring an electrical resistance of one of the conductor tracks. Each of the two electrical conductors is electrically connected to at least one of the conductor tracks with the proviso that none of the conductor tracks is electrically connected to both of the two electrical conductors. The conductor tracks are configured such that a prespecified overvoltage between the two electrical conductors causes a partial discharge that changes the electrical resistance of the one conductor track between the one conductor track and another one of the conductor tracks that is electrically connected to one of the two electrical conductors.

An evaluation method is for evaluating a charging connector in coolability by connecting an evaluation jig to the charging connector, the charging connector including a pair of male terminals and a bottom wall, the evaluation jig including a pair of female terminals, the pair of female terminals being connected to the pair of male terminals in evaluating the charging connector in coolability. The method comprises: connecting the pair of female terminals to the pair of male terminals; and adjusting a connection state of the terminals so that contact resistance between the terminals falls within a prescribed range. In the step of adjusting, a resistance between a point of 4.5 mm of the male terminal from a surface of the bottom wall and a point of 43 mm of the female terminal from the surface of the bottom wall is measured as the contact resistance.

A method and a system for measuring the thermal stability factor of a magnetic tunnel junction device, a semiconductor integrated circuit, and a production management method for the semiconductor integrated circuit, capable of measuring the thermal stability factors of individual devices in a relatively short period of time and quickly performing quality control during material development and at a production site. A meter measures change in resistance value of an evaluation MTJ for a predetermined period while causing a predetermined current to flow into the evaluation MTJ maintained at a predetermined temperature. An analyzer calculates a time constant in which a low-resistance state is maintained and a time constant in which a high-resistance state is maintained from the measured change in resistance value. A thermal stability factor of the evaluation MTJ is calculated on the basis of the calculated time constants and the predetermined current flowing into the evaluation MTJ.

A method and a system for measuring the thermal stability factor of a magnetic tunnel junction device, a semiconductor integrated circuit, and a production management method for the semiconductor integrated circuit, capable of measuring the thermal stability factors of individual devices in a relatively short period of time and quickly performing quality control during material development and at a production site. A meter measures change in resistance value of an evaluation MTJ for a predetermined period while causing a predetermined current to flow into the evaluation MTJ maintained at a predetermined temperature. An analyzer calculates a time constant in which a low-resistance state is maintained and a time constant in which a high-resistance state is maintained from the measured change in resistance value. A thermal stability factor of the evaluation MTJ is calculated on the basis of the calculated time constants and the predetermined current flowing into the evaluation MTJ.

A semiconductor device includes a control signal generation circuit configured to shift a test mode signal in response to a clock signal to generate a plurality of control signals, and a plurality of temperature sensing circuits each including a first resistor having a resistance that varies depending on temperature and configured to generate a temperature sensing signal based on the resistance in response to a corresponding control signal of the plurality of control signals.

A semiconductor device includes a control signal generation circuit configured to shift a test mode signal in response to a clock signal to generate a plurality of control signals, and a plurality of temperature sensing circuits each including a first resistor having a resistance that varies depending on temperature and configured to generate a temperature sensing signal based on the resistance in response to a corresponding control signal of the plurality of control signals.

An object is to provide a deterioration detection sensor of a printed wiring board in which the accuracy of detection is enhanced. A deterioration detection sensor of a printed wiring board is a circuit board which is vertically provided on a printed wiring board, and is soldered to the printed wiring board with a soldering portion at a lower end. The deterioration detection sensor includes a detection surface for detecting a foreign material. The detection surface forms an intersection surface which intersects the planar direction of the printed wiring board. In the deterioration detection sensor as described above, a wiring in the detection surface is broken, and thus the foreign material is detected.