A technique is disclosed for electro-optically inducing a force to fabricated samples and/or devices with laser light. The technique uses the interaction of the oscillating electric field of the laser beam in opposition with the electric field produced by an appropriate electric charge carrier to achieve a net repulsive (or attractive) force on the component holding the electric charge. In one embodiment, force is achieved when the field near the charge carrier is modulated at a subharmonic of the electric field oscillation frequency of the laser and the relative phases of the light field and electric charge carrier field are controlled to provide optimal repulsion/attraction. The effect is scalable by applying the technique to an array of charge carrier fields sequentially as well as using higher power lasers and higher carrier field voltages.

A backlight module and a display device using the same are disclosed. The backlight module includes at least one first light emitting unit, at least one second light emitting unit, a first optical layer and a second optical layer. The first light emitting unit emits a first light, and the second light emitting unit emits a second light. The first optical layer is disposed on a light exiting side of the first light emitting unit and the second light emitting unit, and the first optical layer collimates the first light and the second light. The second optical layer is disposed on a light exiting side of the first optical layer, and the second optical layer scatters the first light but does not scatter the second light.

An optical metasurface which shifts resonant frequency in response to changing temperature. The optical metasurface includes a membrane printed in a pattern from materials with a high coefficient of thermal expansion (“CTE”). The optical metasurface can include a plurality of high CTE fibers/structures in a first direction and a plurality of low CTE fibers/structures in a second direction perpendicular to the first direction. Alternatively, the high CTE substrate can include a plurality of high CTE fibers/structures in only a first direction. The high CTE substrate can include a plurality of high CTE fibers and a plurality of low CTE fiber in a pattern which creates desired sensing domains. An array of nanostructures is formed on the high CTE substrate. The array of nanostructures is designed to resonate with light transmitted through or impinging upon the optical metasurface. The resonant frequency of the response can be tuned thermally.

A silicon on insulator (SOI) photonic device having a waveguide is provided that includes a mode overlap portion with a topology optimized structure situated below an electrode of the capacitance structure. The device can significantly change a refractive index in a volume of mode overlap depending upon the applied potential to the capacitor and allows for a π phase shift in a modest mode overlap volume. The topology optimized structure has a waveguide and substrate that are partitioned in three dimensions using an extruded projection design. The electrode is a transition metal di-chalcogenide monolayer sheet (2D TMD). The enhanced mode overlay from the topology optimized waveguide portion allows a large reduction in the length of the waveguide with the mode overlap to achieve the needed phase shift for a photonic device.

An assembly includes an optical element having a light-shaping region. A light emitter is aimed into the optical element along an internal reflective path. The internal reflective path extends across the light-shaping region. A photodetector is positioned along the internal reflective path. Integrity of the optical element is determined based on detection of light from the light emitter along the internal reflective path by the photodetector.

A light flux controlling member includes a plurality of incidence units disposed in a grid pattern and a plurality of emission units individually disposed between the plurality of incidence units. Each incidence unit includes an incidence surface disposed on a back side of the light flux controlling member, a first reflection surface disposed on a front side of the light flux controlling member at a position facing the light emitting element with the incidence surface placed between the first reflection surface and the light emitting element, and a second reflection surface disposed on the front side of the light flux controlling member at a position facing the side surface of the light flux controlling member with the first reflection surface placed between the second reflection surface and the side surface.

A mid-infrared semiconductor saturable absorber mirror based on InAs/GaSb superlattice comprises a GaSb substrate with an anti-reflection film coated on the lower surface of the GaSb substrate; InAs/GaSb superlattice which has a specific structure and thickness and is arranged on the GaSb substrate; and Bragg reflection film which is arranged on the InAs/GaSb superlattice, wherein Bragg reflection film is composed of multiple pairs of ZnS and YbF.sub.3 film layers with a thickness of ¼ wavelength, and the YbF.sub.3 film layer is connected with the InAs/GaSb superlattice. The device not only has a mid-infrared working range with a broadband operation bandwidth, but also has the advantages of designable parameters, outstanding robustness, high damage threshold and the like, and sets a foundation for the development of mid-infrared ultrafast mode-locked lasers.

A light control sheet including a first transparent electrode layer, a second transparent electrode layer, a light control layer including a resin layer which is formed between the first and second transparent electrode layers and includes a liquid crystal composition in holes formed in the resin layer, the liquid crystal composition including liquid crystal molecules, and a first alignment layer formed between the first transparent electrode layer and the light control layer such that a haze of the light control layer is increased upon application of a voltage to the first transparent electrode layer. The light control layer includes a first high-density portion and a low-density portion, and the first high-density portion is in contact with the first alignment layer and includes the liquid crystal composition at a density higher than a density of the liquid crystal composition in the low-density portion per unit thickness of the light control layer.

Disclosed are a structural color variable photonic crystal composite material and a method of manufacturing the same, and more particularly, a photonic crystal composite material having various changes in color by external stimulation and controlling the color change, and a method of manufacturing the same. The structural color variable photonic crystal composite material includes a metal having a metal oxide layer formed on its surface, wherein the metal oxide layer includes a plurality of pores, and a variable material that swells and contracts within the pores by external stimulation.

A control circuit for controlling a timing, a pulse length, a valve electric field having the certain magnitude, and a pulse envelope of the valve electric field, so as to coherently control a response of a region of an insulator to a probe electric field, the response controlled with a temporal resolution equal to the pulse length and matching the pulse envelope.