Patent classifications
G02F3/00
TRAPPED-ION ENTANGLING GATES WITH BICHROMATIC PAIR OF MICROWAVE FIELDS AND MAGNETIC FIELD GRADIENT
A trapped-ion quantum logic gate and a method of operating the trapped-ion quantum logic gate are provided. The trapped-ion quantum logic gate includes at least one ion having two internal states and forming a qubit having a qubit transition frequency .sub.0, a magnetic field gradient, and two microwave fields. Each of the two microwave fields has a respective frequency that is detuned from the qubit transition frequency .sub.0 by frequency difference . The at least one ion has a Rabi frequency .sub. due to the two microwave fields and a Rabi frequency .sub.g due to the magnetic field gradient. The method includes applying the magnetic field gradient and the two microwave fields to the at least one ion such that a quantity .sub.g/ is in a range between zero and 510.sup.2.
TRAPPED-ION ENTANGLING GATES WITH BICHROMATIC PAIR OF MICROWAVE FIELDS AND MAGNETIC FIELD GRADIENT
A trapped-ion quantum logic gate and a method of operating the trapped-ion quantum logic gate are provided. The trapped-ion quantum logic gate includes at least one ion having two internal states and forming a qubit having a qubit transition frequency .sub.0, a magnetic field gradient, and two microwave fields. Each of the two microwave fields has a respective frequency that is detuned from the qubit transition frequency .sub.0 by frequency difference . The at least one ion has a Rabi frequency .sub. due to the two microwave fields and a Rabi frequency .sub.g due to the magnetic field gradient. The method includes applying the magnetic field gradient and the two microwave fields to the at least one ion such that a quantity .sub.g/ is in a range between zero and 510.sup.2.
WIDEBAND GRAPHENE-BASED ELECTRO-OPTIC ENTANGLER
A electronic method, includes receiving, by a graphene structure, a SPP mode of a particular frequency. The electronic method includes receiving, by the graphene structure, a driving microwave voltage. The electronic method includes generating, by the graphene structure, an entanglement between optical and voltage fields.
MULTI-PHOTON, MULTI-DIMENSIONAL HYPER-ENTANGLEMENT USING HIGHER-ORDER RADIX QUDITS WITH APPLICATIONS TO QUANTUM COMPUTING, QKD AND QUANTUM TELEPORTATION
A system for use with quantum system comprises a light source for generating a first light beam, wherein the first light beam is modulated by a data stream. Entanglement circuitry receives the first light beam from the light source and generates at least two second light beams responsive to the first light beam. The at least two second light beams are entangled. Multistate photon processing circuitry processes each of the at least two second light beams to apply n-states to photons within the at least two light beams and create hyperentangled qudits, where n is greater than 2.
MULTI-PHOTON, MULTI-DIMENSIONAL HYPER-ENTANGLEMENT USING HIGHER-ORDER RADIX QUDITS WITH APPLICATIONS TO QUANTUM COMPUTING, QKD AND QUANTUM TELEPORTATION
A system for use with quantum system comprises a light source for generating a first light beam, wherein the first light beam is modulated by a data stream. Entanglement circuitry receives the first light beam from the light source and generates at least two second light beams responsive to the first light beam. The at least two second light beams are entangled. Multistate photon processing circuitry processes each of the at least two second light beams to apply n-states to photons within the at least two light beams and create hyperentangled qudits, where n is greater than 2.
EXCITONIC DEVICE AND OPERATING METHODS THEREOF
The present disclosure concerns an excitonic device including at least one heterostructure comprising or consisting solely of a first two-dimensional material or layer and a second two-dimensional material or layer. The at least one heterostructure being configured to generate interlayer excitons at high temperature or room temperature.
SYSTEMS USING MICROLED-BASED INTERCONNECTS
Optical interconnect topologies may be provided using microLEDs. The topologies may interconnect ICs. The optical interconnect topologies may be used in some instances in place of electrical busses.
Optical Signal Processing Device
There is provided an optical signal processing device capable of RC in a complex space using optical intensity and phase information. An optical modulator controlled by an electric signal processing circuit modulates laser light, which is emitted from a laser light source, at a modulation period either or both of the intensity and phase values of the optical electric field. On the other hand, an input signal is also modulated by the optical modulator at a modulation period in the time domain so as to be an input signal. The converted input signal passes through an optical transmission path and enters an optical circulation circuit via an optical coupler. Part of the circulating light is branched into two by an optical coupler, and the branched light is converted into a complex intermediate signal at a coherent optical receiver. This complex intermediate signal demodulated at the coherent optical receiver is computed at an electric signal processing circuit, and thereby the operation as RC can be performed.
Optical logic gate decision-making circuit combining non-linear materials on SOI
An optical logic gate decision-making circuit that combines non-linear materials, such as silicon nitride, on a silicon-on-insulator (SOI) substrate is described. Circuitry includes a ring cavity coupled to an input optical bus waveguide. The input optical bus waveguide receives an optical signal and passes the optical signal to the ring cavity. An electro-optical device, for instance a PN junction, is integrated within the ring cavity to modulate the optical signal such that an optical logic gate function is enabled. An output optical bus waveguide is also coupled to the ring cavity, which outputs the optical signal modified based on the optical logic gate function and based on a wavelength routing function. By using silicon nitride, the optical non-linearity of the materials enables an all-optical logic gate. Thus, the optical logic gate decision-making circuit is suitable for all-optical circuits, and support ultrafast optical signal processing and enabling packet switching of data.
Optical logic gate decision-making circuit combining non-linear materials on SOI
An optical logic gate decision-making circuit that combines non-linear materials, such as silicon nitride, on a silicon-on-insulator (SOI) substrate is described. Circuitry includes a ring cavity coupled to an input optical bus waveguide. The input optical bus waveguide receives an optical signal and passes the optical signal to the ring cavity. An electro-optical device, for instance a PN junction, is integrated within the ring cavity to modulate the optical signal such that an optical logic gate function is enabled. An output optical bus waveguide is also coupled to the ring cavity, which outputs the optical signal modified based on the optical logic gate function and based on a wavelength routing function. By using silicon nitride, the optical non-linearity of the materials enables an all-optical logic gate. Thus, the optical logic gate decision-making circuit is suitable for all-optical circuits, and support ultrafast optical signal processing and enabling packet switching of data.