A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

A system and method of compensating for local focus errors in a semiconductor process. The method includes providing a reticle and applying, at a first portion of the reticle, a step height based on an estimated local focus error for a first portion of a wafer corresponding to the first portion of the reticle. A multilayer coating is formed over the reticle and an absorber layer is formed over the multilayer coating. A photoresist is formed over the absorber layer. The photoresist is patterned, an etch is performed of the absorber layer and residual photoresist is removed.

A system and method of compensating for local focus errors in a semiconductor process. The method includes providing a reticle and applying, at a first portion of the reticle, a step height based on an estimated local focus error for a first portion of a wafer corresponding to the first portion of the reticle. A multilayer coating is formed over the reticle and an absorber layer is formed over the multilayer coating. A photoresist is formed over the absorber layer. The photoresist is patterned, an etch is performed of the absorber layer and residual photoresist is removed.

Provided are a method and apparatus for cleaning organic materials accumulated on a mask used in a process of depositing organic materials. The apparatus includes a plasma generating unit, a cleaning chamber connected to the plasma generating unit and accommodating the mask therein, a gas injection port disposed within the cleaning chamber configured to inject the plasma, and a cooling device disposed on a first surface of the mask opposite to an opposite surface of the mask facing the gas injection port.

A wafer edge exposure apparatus includes a wafer carrying module, a reticle, a reticle driving module, an alignment module, an exposure module, and a control module; the wafer carrying module is configured to carry the wafer and drive the wafer to rotate; the wafer includes a valid region and an edge region surrounding the valid region; the reticle driving module is configured to drive the reticle to rotate; the alignment unit is configured to detect the alignment state of the reticle with the wafer; and the control module is configured to control the movement state of the wafer carrying module and the reticle driving module and configured to control the exposure module to perform wafer edge exposure on the wafer.

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. ##STR00001##
In Chemical Formula 1, A, A′, L and n are the same as in the detailed description.

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. ##STR00001##
In Chemical Formula 1, A, A′, L and n are the same as in the detailed description.

According to an embodiment, mask manufacturing equipment includes a detector, an irradiator, a calculator, and a controller. The detector detects positional deviation of a pattern formed on a mask substrate. The irradiator irradiates the mask substrate with laser light to form a heterogeneous layer that is expanded in volume in the mask substrate. The calculator calculates an area periphery irradiation condition under which the irradiator is caused to emit laser light to a peripheral area of the pattern on the basis of the positional deviation detected by the detector so that the pattern area is reduced by forming the heterogeneous layer in the peripheral area of the pattern. The controller controls the irradiator to form the heterogeneous layer in the peripheral area of the pattern according to the area periphery irradiation condition.

According to an embodiment, mask manufacturing equipment includes a detector, an irradiator, a calculator, and a controller. The detector detects positional deviation of a pattern formed on a mask substrate. The irradiator irradiates the mask substrate with laser light to form a heterogeneous layer that is expanded in volume in the mask substrate. The calculator calculates an area periphery irradiation condition under which the irradiator is caused to emit laser light to a peripheral area of the pattern on the basis of the positional deviation detected by the detector so that the pattern area is reduced by forming the heterogeneous layer in the peripheral area of the pattern. The controller controls the irradiator to form the heterogeneous layer in the peripheral area of the pattern according to the area periphery irradiation condition.