In a memory module including a plurality of DRAM chips which transmit/receive a system data signal with a predetermined data width and at a transfer rate and which transmit/receive an internal data signal having a larger data width and a lower transfer rate as compared with the system data signal, the transfer rate of the system data signal is restricted. Current consumption in DRAMs constituting the memory module is large, hindering speed increases. For this memory module, a plurality of DRAM chips are stacked on an IO chip. Each DRAM chip is connected to the IO chip by a through electrode, and includes a constitution for mutually converting the system data signal and the internal data signal in each DRAM chip by the IO chip. Therefore, wiring between the DRAM chips can be shortened, and DLL having a large current consumption may be disposed only on the IO chip.

In a memory module including a plurality of DRAM chips which transmit/receive a system data signal with a predetermined data width and at a transfer rate and which transmit/receive an internal data signal having a larger data width and a lower transfer rate as compared with the system data signal, the transfer rate of the system data signal is restricted. Current consumption in DRAMs constituting the memory module is large, hindering speed increases. For this memory module, a plurality of DRAM chips are stacked on an IO chip. Each DRAM chip is connected to the IO chip by a through electrode, and includes a constitution for mutually converting the system data signal and the internal data signal in each DRAM chip by the IO chip. Therefore, wiring between the DRAM chips can be shortened, and DLL having a large current consumption may be disposed only on the IO chip.

The present invention pertains to a hard disk drive form factor compatible solid-state storage device enclosure assembly that protects circuit boards contained within the enclosure from environmental disruption, such as mechanical stress, vibration, external electronic disruption, or any combination of these, while allowing for a variable number of circuit boards in the SSD enclosure. In another embodiment, the solid-state storage device enclosure assembly, or a similar circuit board assembly, includes an alignment guide that precludes a circuit board from being misaligned within the enclosure.

A method for calibrating a current sensor which is configured to determine, in a vehicle's onboard power system, an electric operating current which flows through a measuring resistor, based on comparison of a voltage drop at the measuring resistor caused by the operating current and based on a rule which is dependent on the measuring resistor, including: determining an operating voltage drop brought about at the measuring resistor by the operating current; impressing a known electric calibration current into the measuring resistor, detecting an overall voltage drop brought about at the measuring resistor by the calibration current and the operating current, filtering the operating voltage drop from the overall voltage drop, such that a calibration voltage drop which is brought about by the calibration current remains, and calibrating the rule, dependent on the measuring resistor, based on the comparison of the calibration current and the calibration voltage drop.

An integrated circuit is provided that includes memory elements that exhibit immunity to soft error upset (SEU) events when subjected to high-energy atomic particle strikes. Each memory element may include at least two inverting circuits coupled in a feedback loop. Transistors in the memory element may be grouped in one contiguous region or divided into multiple separate regions. The memory element may include a long gate conductor that extends outside the boundary of the one contiguous region or the multiple separated regions. The long gate conductor may serve to provide parasitic resistance in the feedback loop to help mitigate SEU disturbances.

A storage system and method for die-based data retention recycling are provided. In one embodiment, a storage system comprises a controller and a plurality of memory dies. Each of the plurality of memory dies comprises its own temperature sensor, wherein at least one of the memory dies is characterized by a relatively lower endurance than at least one other of the memory dies, and wherein the at least one of the memory dies with the relatively lower endurance is positioned farther away from the controller than the at least one other of the memory dies.

According to certain aspects, a memory module is coupled to a memory controller of a host computer system via an interface. The memory module is operable in at least a second mode and a first mode. The memory module in the second mode is configured to be trained with one or more training sequences initiated by the memory controller. The memory module in the first mode is configured to perform one or more memory read or write operations not associated with the one or more training sequences by communicating data signals with the memory module. The memory module is configurable to handshake with the memory controller about the one or more training sequences during the second mode.

In a memory module including a plurality of DRAM chips which transmit/receive a system data signal with a predetermined data width and at a transfer rate and which transmit/receive an internal data signal having a larger data width and a lower transfer rate as compared with the system data signal, the transfer rate of the system data signal is restricted. Current consumption in DRAMs constituting the memory module is large, hindering speed increases. For this memory module, a plurality of DRAM chips are stacked on an IO chip. Each DRAM chip is connected to the IO chip by a through electrode, and includes a constitution for mutually converting the system data signal and the internal data signal in each DRAM chip by the IO chip. Therefore, wiring between the DRAM chips can be shortened, and DLL having a large current consumption may be disposed only on the IO chip.

In a memory module including a plurality of DRAM chips which transmit/receive a system data signal with a predetermined data width and at a transfer rate and which transmit/receive an internal data signal having a larger data width and a lower transfer rate as compared with the system data signal, the transfer rate of the system data signal is restricted. Current consumption in DRAMs constituting the memory module is large, hindering speed increases. For this memory module, a plurality of DRAM chips are stacked on an IO chip. Each DRAM chip is connected to the IO chip by a through electrode, and includes a constitution for mutually converting the system data signal and the internal data signal in each DRAM chip by the IO chip. Therefore, wiring between the DRAM chips can be shortened, and DLL having a large current consumption may be disposed only on the IO chip.

A stacked semiconductor device includes at least one upper chip including a plurality of channels each including first and second pseudo-channels; and a plurality of transfer control circuits respectively corresponding to the channels and each configured to output channel commands according to a channel designation signal designating one of the first and second pseudo-channels and a location information signal indicating a location of a corresponding channel of the channels, and transmit first and second data words between the corresponding channel and a lower chip according to the channel commands.