Apparatuses and methods for read threshold voltage selection are provided. One example method can include setting a first soft read threshold voltage and a second soft read threshold voltage based on a difference between a first number of memory cells that are read as being programmed to a first state when read using a first threshold voltage and a second number of memory that are read as being programmed to the first state when read using another threshold voltage.

A memory including a plurality of word lines to which one or more memory cells are coupled, an address storage unit suitable for storing an input address corresponding to a first external signal that is inputted at a random time, and a control unit suitable for activating a word line corresponding to the input address of the plurality of word lines in response to an active command and refreshing one or more target word lines selected using an address stored in the address storage unit when performing a refresh operation.

A semiconductor memory device includes a memory cell, a word line connected to the memory cell, a source line connected to the memory cell, a bit line connected to the memory cell, and a control circuit configured to perform a read operation on the memory cell. During the read operation, the control circuit applies to the word line a first voltage, a second voltage greater than the first voltage after applying the first voltage, and a third voltage greater than the first voltage and smaller than the second voltage after applying the second voltage, and applies to the source line a fourth voltage according to a timing at which the second voltage is applied to the word line, a fifth voltage smaller than the fourth voltage after applying the fourth voltage, and a sixth voltage greater than the fifth voltage after applying the fifth voltage.

Methods, systems, and devices for varying-polarity read operations for polarity-written memory cells are described. Memory cells may be programmed to store different logic values based on applying write voltages of different polarities to the memory cells. A memory device may read the logic values based on applying read voltages to the memory cells, and the polarity of the read voltages may vary such that at least some read voltages have one polarity and at least some read voltages have another polarity. The read voltage polarity may vary randomly or according to a pattern and may be controlled by the memory device or by a host device for the memory device.

Implementing a hardware description language (HDL) memory includes determining, using computer hardware, a width and a depth of the HDL memory specified as an HDL module for implementation in an integrated circuit (IC), partitioning, using the computer hardware, the HDL memory into a plurality of super slices corresponding to columns and the plurality of super slices into a plurality of super tiles arranged in rows. A heterogeneous memory array may be generated, using the computer hardware. The heterogeneous memory array is formed of different types of memory primitives of the IC. Input and output circuitry configured to access the heterogeneous memory array can be generated using the computer hardware.

Implementing a hardware description language (HDL) memory includes determining, using computer hardware, a width and a depth of the HDL memory specified as an HDL module for implementation in an integrated circuit (IC), partitioning, using the computer hardware, the HDL memory into a plurality of super slices corresponding to columns and the plurality of super slices into a plurality of super tiles arranged in rows. A heterogeneous memory array may be generated, using the computer hardware. The heterogeneous memory array is formed of different types of memory primitives of the IC. Input and output circuitry configured to access the heterogeneous memory array can be generated using the computer hardware.

A mobile device comprises a pupil information collecting module and a master control module, such that the pupil information collecting module may be used for collecting pupil characteristic information of a user. The master control module may receive the pupil characteristic information of the user when the user accesses a controlled unit, and may determine, on the basis of the pupil characteristic in formation of the user, if the user is allowed to access the controlled unit. The mobile device may use the pupil characteristic information of the user to perform identity verification.

Disclosed herein is a device includes a command generation circuit that activates first and second command signals, an internal circuit that includes a plurality of transistors that are brought into a first operation state when at least one of the first and second command signals is activated, and an output gate circuit that receives a first signal output from the internal circuit, the output gate circuit being configured to pass the first signal when the second command signal is deactivated and to block the first signal when the second command signal is activated.

An apparatus has magnetic logic units a logic circuit configured to receive a serial input bit stream at an input node. Individual bits of data from the serial input bit stream are serially written into individual magnetic logic units without buffering the serial input bit stream between the input node and the individual magnetic logic units. Individual bits of data from individual magnetic logic units are serially read to produce a serial output bit stream on an output node without buffering the serial output bit stream between the individual magnetic logic units and the output node.

An apparatus has magnetic logic units a logic circuit configured to receive a serial input bit stream at an input node. Individual bits of data from the serial input bit stream are serially written into individual magnetic logic units without buffering the serial input bit stream between the input node and the individual magnetic logic units. Individual bits of data from individual magnetic logic units are serially read to produce a serial output bit stream on an output node without buffering the serial output bit stream between the individual magnetic logic units and the output node.