The present disclosure includes apparatuses, methods, and systems for sensing two memory cells to determine multiple data values. An embodiment includes a memory having a plurality of memory cells and circuitry configured to sense memory states of each of two self-selecting multi-level memory cells (MLC) of the plurality of memory cells to determine multiple data values. The data values are determined by sensing a memory state of a first MLC using a first sensing voltage in a sense window between a first threshold voltage distribution corresponding to a first memory state and a second threshold voltage distribution corresponding to a second memory state and sensing a memory state of a second MLC using a second sensing voltage in a sense window between the first threshold voltage distribution corresponding to a first memory state and a second threshold voltage distribution corresponding to the second memory state. The sequence of determining data values includes sensing the memory state of the first and the second MLCs using higher sensing voltages than the first and the second sensing voltages in subsequent sensing windows, in repeated iterations, until the state of the first and the second MLCs are determined. The first and second sensing voltages are selectably closer in the sense window to the first threshold voltage distribution or the second threshold voltage distribution.

A semiconductor memory device includes a mammy cell array including a plurality of memory cells and a control logic circuit configured to control the semiconductor memory device, The control logic circuit includes a mode register and a remaining lifetime calculating device configured to count usage metrics based on one or more of the following: a number of clock signals received from a memory controller, an amount of data transmitted or received to or from the memory controller, and/or a number of commands received from the memory controller. The remaining lifetime calculating device generates a remaining lifetime code representing a remaining lifetime of the semiconductor memory device based on the usage metrics, and stores the remaining lifetime code in the mode register.

Examples herein relate to devices that include a strobe tree circuit for capturing data using a memory-sourced strobe. In an example, a device includes a data capture path including first and second flip-flops, and a strobe tree including a comparator and first and second multiplexers. The comparator is configured to output complementary signals on first and second output nodes. First and second selection input nodes of the first multiplexer are connected to the first and second output nodes of the comparator, respectively. First and second selection input nodes of the second multiplexer are connected to the second and first output nodes of the comparator, respectively. The read strobe tree is configured to provide first and second signals output from the first and second multiplexers to first and second nodes, respectively. Clock input nodes of the first and second flip-flops are connected to the first and second nodes, respectively.

Systems, apparatuses, and methods for identifying response data arriving out-of-order from two different memory types are disclosed. A computing system includes one or more clients for processing applications. A memory channel transfers memory traffic between a memory controller and a memory bus connected to each of a first memory and a second memory different from the first memory. The memory controller determines a given point in time when read data is to be scheduled to arrive on the memory bus from memory. The memory controller associates a unique identifier with the given point in time. The memory controller identifies a given command associated with the arriving read data based on the given point in time.

Methods, systems, and devices for multi-component cell architectures for a memory device are described. A memory device may include self-selecting memory cells that include multiple self-selecting memory components (e.g., multiple layers or other segments of a self-selecting memory material, separated by electrodes). The multiple self-selecting memory components may be configured to collectively store one logic state based on the polarity of a programming pulse applied to the memory cell. The multiple memory component layers may be collectively (concurrently) programmed and read. The multiple self-selecting memory components may increase the size of a read window of the memory cell when compared to a memory cell with a single self-selecting memory component. The read window for the memory cell may correspond to the sum of the read windows of each self-selecting memory component.

Memory devices might include a capacitor, a first capacitance element, a first transistor, and control logic. The first transistor might be connected between the capacitor and the first capacitance element. The control logic might be connected to a control gate of the first transistor. The control logic might be configured to activate the first transistor to precharge the capacitor and the first capacitance element during a read operation of the memory device. The first capacitance element might be a wire capacitance of a first signal line.

According to one embodiment, there is provided a non-volatile semiconductor storage device including a non-volatile memory, a monitoring section, a determining section, and a notification processing section. The non-volatile memory includes a plurality of memory cells driven by word lines and a voltage generating section that generates a read voltage to be applied to the word lines. The monitoring section monitors a change in a threshold distribution of the plurality of memory cells upon performing a read processing to read data from the plurality of memory cells by applying the read voltage to the word lines. The determining section determines a degree of deterioration of the non-volatile memory in accordance with a monitoring result by the monitoring section. The notification processing section notifies a life of the non-volatile memory in accordance with a determining result by the determining section.

A ternary content addressable memory (TCAM) semiconductor device includes a first and second data storage portions each connected to a bit line. The first data storage portion is connected to a first word line, and to a first and third group of in series transistors. The second data storage portion is connected to a second word line, and to a second and fourth group of in series transistors. The first group and second group of in series transistors are each connected to a first match line. The first group is connected to a first search line bar, and the second group is connected to a first search line. A third and fourth group of in series transistors are each connected to a second match line. The third group is connected to a second search line, and the fourth group is connected to a second search line bar.

Aggressor rows may be detected by comparing access count values of word lines to a threshold value. Based on the comparison, a word line may be determined to be an aggressor row. The threshold value may be dynamically generated, such as a random number generated by a random number generator. In some examples, a random number may be generated each time an activation command is received. Responsive to detecting an aggressor row, a targeted refresh operation may be performed.

Memory devices are provided that include special operating modes accessible upon receipt of a particular message from a host. One device includes a memory array, a special mode enable register, and a controller. When the controller receives a register write command to write first data into the special mode enable register and the memory device does so, the memory device operates in a first mode. When the controller receives a register write command to write second data into the special mode enable register and the memory device does so, the memory device operates in a second mode.