An analog neuromorphic circuit is disclosed, having input voltages applied to a plurality of inputs of the analog neuromorphic circuit. The circuit also includes a plurality of resistive memories that provide a resistance to each input voltage applied to each of the inputs so that each input voltage is multiplied in parallel by the corresponding resistance of each corresponding resistive memory to generate a corresponding current for each input voltage and each corresponding current is added in parallel. The circuit also includes at least one output signal that is generated from each of the input voltages multiplied in parallel with each of the corresponding currents for each of the input voltages added in parallel. The multiplying of each input voltage with each corresponding resistance is executed simultaneously with adding each corresponding current for each input voltage.

Methods, systems, and devices for code word formats and structures are described. A code word format and structure may include various fields that facilitate a reliable transaction of user data during an access operation associated with a memory medium. For example, the bit fields may include information directed to an error control operation for a port manager to perform on a code word configured in accordance with the code word format and structure. Additionally, the code word format and structure may be configured for low latency operation and reliable transaction of the user data during the access operation. For example, the port manager may receive a first portion of the code word and parse the first portion of the code word concurrently with receiving an additional portion of the code word.

A system includes a volatile storage device, a read-only memory (ROM), a memory built-in self-test (BIST) controller and a central processing unit (CPU). The CPU, upon occurrence of a reset event, executes a first instruction from the ROM to cause the CPU to copy a plurality of instructions from a range of addresses in the ROM to the volatile storage device. The CPU also executes a second instruction from the ROM to change a program counter. The CPU further executes the plurality of instructions from the volatile storage device using the program counter. The CPU, when executing the plurality of instructions from the volatile storage device, causes the ROM to enter a test mode and the memory BIST controller to be configured to test the ROM.

The present disclosure generally relates to methods of operating storage devices. The storage device comprises a controller comprising first random access memory (RAM1), second random access memory (RAM2), and a storage unit divided into a plurality of zones. By restricting the host to have a minimum write size, the data transfer speed to RAM2, RAM1, and the storage unit can be optimized. A temporary buffer is utilized within the RAM1 to update parity data for the corresponding commands. The parity data is updated in the RAM1 and written to the RAM2 in the corresponding zone. The parity data may be copied from the RAM2 to the RAM1 to update the parity data in the temporary buffer when commands are received to write data to corresponding zones. As the parity data is updated, the corresponding command is simultaneously written to the corresponding zone.

Disclosed is a memory device for cancelling a sneak current. The memory device according to the exemplary embodiment of the present disclosure includes a memory cell array which includes a plurality of word lines and a plurality of bit lines intersecting each other and memory cells disposed at intersections of the word lines and the bit lines; and a sensing circuit which supplies a bit line current to all or some of the bit lines, cancels a sneak current based on the bit line current by at least one switching control, and senses and amplifies data stored in the memory cell to output the sensed and amplified data.

A semiconductor storage device capable of achieving low power and high integration is provided. A non-volatile semiconductor memory of the disclosure includes a memory cell array. The memory cell array has a NOR array with a NOR flash memory structure and a variable resistance array with a variable resistance memory structure formed on a substrate. An entry gate is formed between the NOR array and the variable resistance array. When the NOR array is accessed, the entry gate separates the variable resistance array from the NOR array.

Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

An array device and a writing method thereof are provided. A synapse array device includes: a crossbar array, in which a resistive memory element is connected to each intersection of a plurality of row lines and a plurality of column lines; a row select/drive circuit selecting a row line of the crossbar array and applying a pulse signal to the selected row line; a column select/drive circuit selecting a column line of the crossbar array and applying a pulse signal to the selected column line; and a writing part writing to the resistive memory element connected to the selected row line and the selected column line. A first write voltage with controlled pulse width is applied to the selected row line, and a second write voltage with controlled pulse width is applied to the selected column line to perform set writing of the resistive memory element.

Methods and systems for locating a filament in a resistive memory device are described. In an example, a device can acquire an image indicating an occurrence of photoemission from the resistive memory device. The device can determine a location of the filament in a switching medium of the resistive memory device using the acquired image.

A memory cell includes a bottom electrode, a first dielectric layer, a variable resistance layer, and a top electrode. The first dielectric layer laterally surrounds the bottom electrode. A top surface of the bottom electrode is located at a level height lower than that of a top surface of the first dielectric layer. The variable resistance layer is disposed on the bottom electrode and the first dielectric layer. The variable resistance layer contacts the top surface of the bottom electrode and the top surface of the first dielectric layer. The top electrode is disposed on the variable resistance layer.