A sensor element for storing rotation or position information includes a substrate and a domain wall conductor arranged on the substrate. A course of the domain wall conductor is of a closed circumferential, continuous configuration without crossings. The domain wall conductor comprises a first region having a positive curvature and a second region having a negative curvature.

A sensor element for storing rotation or position information includes a substrate and a domain wall conductor arranged on the substrate. A course of the domain wall conductor is of a closed circumferential, continuous configuration without crossings. The domain wall conductor comprises a first region having a positive curvature and a second region having a negative curvature.

A magnetic memory device includes a first magnetic structure having a magnetic anisotropy, a read electrode that is on an end of the first magnetic structure and configured to sense a first magnetic moment of the first magnetic structure and to convert the first magnetic moment to an electric signal, a second magnetic structure spaced apart from the first magnetic structure, the second magnetic structure having a magnetic anisotropy, and a write electrode that is on an end of the second magnetic structure and configured to change a second magnetic moment of the second magnetic structure, based on the electric signal. The magnetic memory device executes operations of writing, moving, and reading data on almost the entire region of the magnetic structure in a more efficient manner, compared with the conventional magnetic memory device.

System on a Chip (SoC) devices include two packetized memory buses for conveying local memory packets and system interconnect packets. In an in-situ configuration of a data processing system two or more SoCs are coupled with one or more hybrid memory cubes (HMCs). The memory packets enable communication with local HMCs in a given SoC's memory domain. The system interconnect packets enable communication between SoCs and communication between memory domains. In a dedicated routing configuration each SoC in a system has its own memory domain to address local HMCs and a separate system interconnect domain to address HMC hubs, HMC memory devices, or other SoC devices connected in the system interconnect domain.

System on a Chip (SoC) devices include two packetized memory buses for conveying local memory packets and system interconnect packets. In an in-situ configuration of a data processing system two or more SoCs are coupled with one or more hybrid memory cubes (HMCs). The memory packets enable communication with local HMCs in a given SoC's memory domain. The system interconnect packets enable communication between SoCs and communication between memory domains. In a dedicated routing configuration each SoC in a system has its own memory domain to address local HMCs and a separate system interconnect domain to address HMC hubs, HMC memory devices, or other SoC devices connected in the system interconnect domain.

It discloses a technical solution of the present disclosure partitions a high-speed data code stream into a plurality of sequentially arranged data blocks so as to write the data blocks sequentially to a circular cache. The circular cache is comprised of N cache segments that share a write pointer, each cache segment owning an independent read pointer. The data blocks are sequentially written into the N cache segments; data will be continuously written to the 1.sup.st cache segment; data will be read from the cache segment at a relatively low rate and written to a corresponding SD card, thereby implementing data speed reduction; a controller will integrate the disordered data into a same SD card following the original arrangement order, thereby completing all data storage work.

A sensor element for storing rotation or position information includes a substrate and a domain wall conductor arranged on the substrate. A course of the domain wall conductor is of a closed circumferential, continuous configuration without crossings. The domain wall conductor comprises a first region having a positive curvature and a second region having a negative curvature.

A memory component includes a memory core comprising dynamic random access memory (DRAM) storage cells and a first circuit to receive external commands. The external commands include a read command that specifies transmitting data accessed from the memory core. The memory component also includes a second circuit to transmit data onto an external bus in response to a read command and pattern register circuitry operable during calibration to provide at least a first data pattern and a second data pattern. During the calibration, a selected one of the first data pattern and the second data pattern is transmitted by the second circuit onto the external bus in response to a read command received during the calibration. Further, at least one of the first and second data patterns is written to the pattern register circuitry in response to a write command received during the calibration.

A memory component includes a memory core comprising dynamic random access memory (DRAM) storage cells and a first circuit to receive external commands. The external commands include a read command that specifies transmitting data accessed from the memory core. The memory component also includes a second circuit to transmit data onto an external bus in response to a read command and pattern register circuitry operable during calibration to provide at least a first data pattern and a second data pattern. During the calibration, a selected one of the first data pattern and the second data pattern is transmitted by the second circuit onto the external bus in response to a read command received during the calibration. Further, at least one of the first and second data patterns is written to the pattern register circuitry in response to a write command received during the calibration.

A magnetic memory device includes a first magnetic structure having a magnetic anisotropy, a read electrode that is on an end of the first magnetic structure and configured to sense a first magnetic moment of the first magnetic structure and to convert the first magnetic moment to an electric signal, a second magnetic structure spaced apart from the first magnetic structure, the second magnetic structure having a magnetic anisotropy, and a write electrode that is on an end of the second magnetic structure and configured to change a second magnetic moment of the second magnetic structure, based on the electric signal. The magnetic memory device executes operations of writing, moving, and reading data on almost the entire region of the magnetic structure in a more efficient manner, compared with the conventional magnetic memory device.