A method for dynamically handling the failure of the static random-access memory (SRAM) dynamic failure handling system using a cyclic redundancy check (CRC) includes obtaining a write data; determining a write address; storing the write data at the write address of a frame memory which is composed of the SRAM and includes a real address area and a spare address area which are distinguished from each other; storing, in response to the write address, a write cyclic redundancy check (CRC) generated by performing a CRC calculation on the write data; determining a read address; reading a read data from the read address of the frame memory; determining whether, based on the A CRC remainder W_CRC corresponding to the read address and the read data, a CRC error occurs, and generating an error flag when the CRC error occurs; determining a fault address based on the error flag; and mapping the fault address to one of non-fault spare addresses of the spare address area when the fault address is an address of the real address area.

An electronic device includes memory banks and repair circuitry configured to remap data from the memory banks to repair memory elements of the memory banks when a failure occurs. The repair circuitry includes a logic gate configured to receive an output from a memory bank of the memory banks, receive a failure signal indicating whether a corresponding memory element has failed, and transmit the output with a value of the output is based at least in part on the failure signal. The repair circuitry also includes error correction circuitry configured to receive the output via the logic gate and a multiplexer configured to receive the output from the memory bank, receive a repair value, and selectively output the output or the repair value from the repair circuitry as an output of the repair circuitry.

Runtime memory cell row defect detection and replacement includes detecting in a memory of a computer system operating in a runtime operating system mode, a defective row of memory cells having at least one defective cell. In response to the detection of the defective row, interrupting the operating system of the computer system and, in a runtime system maintenance mode, replacing the defective row of memory cells with a spare row of memory cells as a replacement row of memory cells. Execution of the operating system is then resumed in the runtime operating system mode Other aspects and advantages are described.

A method of managing errors in a plurality of storage drives includes receiving, at a memory controller coupled to at least one storage medium in an SSD, a read command from a host interface. The method also includes retrieving, from the storage medium, read data corresponding to a plurality of data chunks to be retrieved in response to the read command, and determining that at least one data chunk of the plurality of data chunks is unable to be read, the at least one data chunk corresponding to a failed data chunk. And in response to determining the failed data chunk, sending to the host interface the read data including the failed data chunk or excluding the failed data chunk. And in response to the read command sending to the host interface status information about all data chunks.

For a non-volatile memory that uses hard bit and soft bit data in error correction operations, to reduce the amount of soft bit data that needs to be transferred from a memory to the controller and improve memory system performance, the soft bit data can be compressed before transfer. After the soft bit data is read and stored into the internal data latches associated with the sense amplifiers, it is compressed within these internal data latches. The compressed soft bit data can then be transferred to the transfer data latches of a cache buffer, where the compressed soft bit data can be consolidated and transferred out over an input-output interface. Within the input-output interface, the compressed data can be reshuffled to put into logical user data order if needed.

For a non-volatile memory that uses hard bit and a soft bit data in error correction operations, architectures are introduced for the compression of the soft bit data to reduce the amount of data transferred over the memory's input-output interface. For a memory device with multiple planes of memory cells, the internal global data bus is segmented and a data compression circuit associated with each segment. This allows soft bit data from a cache buffer of a plane using one segment to transfer data between the cache buffer and the associated compression circuit concurrently with transferring data from a cache buffer of another plane using another segment, either for compression or transfer to the input-output interface.

A data processing circuit and a fault mitigating method are provided. The method is adapted for a memory having at least one fault bit. The memory provides a block for data storage. A difference between an output of a value of a plurality of bits input to at least one computing layer in a neural network and a correct value is determined. The bits are respectively considered the at least one fault bit. A repair condition is determined based on the difference. The repair condition includes a correspondence between a position where the fault bit is located in the block and at least one non-fault bit in the memory. A value of at least one non-fault bit of the memory replaces a value of the fault bit based on the repair condition.

A plurality of physically unclonable function (PUF) bit cells are surveyed by supplying a plurality of threshold control values to the PUF bit cells. Survey results associated with each of the threshold control values are evaluated to determine a threshold control pair having a positive threshold control value and a negative threshold control value among the plurality of threshold control values that results in a desired number PUF bit cells that are strong ones and that are strong zeros.

A plurality of physically unclonable function (PUF) bit cells are surveyed by supplying a plurality of threshold control values to the PUF bit cells. Survey results associated with each of the threshold control values are evaluated to determine a threshold control pair having a positive threshold control value and a negative threshold control value among the plurality of threshold control values that results in a desired number PUF bit cells that are strong ones and that are strong zeros.

Methods, systems, and apparatuses for memory (e.g., DRAM) having an error check and scrub (ECS) procedure in conjunction with refresh operations are described. While a refresh operation reads the code words of a memory row, ECS procedures may be performed on some of the sensed code words. When the write portion of the refresh begins, a code word discovered to have errors may be corrected before it is written back to the memory row. The ECS procedure can be incremental across refresh operations, beginning, for example, each ECS at the code word where the pervious ECS for that row left off. The ECS procedure can include an out-of-order (OOO) procedure where ECS is performed more often for certain identified code words.